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1. A method for quantitative nanoscale imaging of dopant distributions using secondary ion mass spectrometry: an application example in silicon photovoltaics.

Author

Eswara, Santhana, Pshenova, Alisa, Lentzen, Esther, Nogay, Gizem, Lehmann, Mario, Ingenito, Andrea, Jeangros, Quentin, Haug, Franz-Josef, Valle, Nathalie, Philipp, Patrick, Hessler-Wyser, Aïcha, and Wirtz, Tom

Subjects
PHOTOVOLTAIC power systems, SILICON, SECONDARY ion mass spectrometry
Abstract

A method for rapid quantitative imaging of dopant distribution using secondary ion mass spectrometry (SIMS) is described. The method is based on SIMS imaging of the cross-section of a reference sample with a known concentration profile. It is demonstrated for the case of boron quantification in silicon in a SIMS imaging mode. A nonlinear relationship between the secondary ion intensity and the concentration is observed. A detection limit of 3 (±2) × 1017 at./cm3 (~6 ppm) is determined with 39 nm pixel-size for the used experimental conditions. As an application example, a boron concentration profile in a passivating contact deposited on a textured Si surface is analyzed. [ABSTRACT FROM AUTHOR]

Published
2019
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