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Introduction: Given the new ideas on wound care offered by the eCASH (early Comfort using Analgesia, minimal Sedatives, and maximal Humane care) and the substantial differences in clinical treatment between acute and chronic wounds, we aimed to investigate the effect of comfort therapy under the eCASH concept on analgesic sedation and accelerated wound healing in patients with acute or chronic wounds. Methods: This randomized clinical study was conducted in two parts: acute wounds and chronic wounds. Patients with acute wounds were allocated into the acute wound control group (AWCG) and the acute wound experimental group (AWEG). Patients with chronic wounds were allocated into the chronic wound control group (CWCG) and two experimental groups, in which they received intermittent negative pressure therapy (IPTEG) and continuous negative pressure therapy (CPTEG). On the basis of the standard treatment for patients in the control group, eCASH therapy was used in the experimental groups. In addition, pain intensity and procedural anxiety were evaluated using the visual analogue score (VAS) and the Hamilton Anxiety Scale (HAM-A). In addition, clinical effects were assessed on the basis of the size of the surface area, rate of healing, and concentration of pro-inflammatory factors (IL-1, IL-6, TNF-α) and growth factors (VEGF, bFGF, TGF-β1). Results: Compared with the control group, the VAS score and HAM-A score in the experimental groups were significantly decreased after intervention (P < 0.05). After intervention, the levels of IL-1β, IL-6, and TNF-α in AWEG, IPTEG, and CPTEG were significantly lower than those in AWCG. In addition, the levels of VEGF, bFGF, and TGF-β1 in IPTEG and CPTEG were significantly higher than those in CWCG (P < 0.05). Conclusion: These results indicated that comfort therapy under the eCASH concept has a significant effect on ameliorating the pain and anxiety of patients, reducing the inflammatory reaction during the period of wound healing in the treatment of acute and chronic wounds. Clinical Trial Registry: The trial has been registered in the Chinese Clinical Trial Registry (ChiCTR2200057981). [ABSTRACT FROM AUTHOR]

A triple modular redundancy SRAM was designed as the embedded high-speed memory for a radiation-tolerant ARM processor with ST Microelectronics 28-nm FDSOI technology. The single event upset (SEU) cross-section of the SRAM was tested by using heavy ions with the linear energy transfer of 15.0 meV.cm2.mg−1 in both non-TMR and TMR modes with different accumulated fluence. The SRAM cell was also simulated by using Cogenda TCAD simulation suite and the cross section was calculated by using analytic method. The results showed the cross-section is around 2E-10 cm2/bit in non-TMR mode, and in TMR mode it varied from one to several orders lower than the non-TMR mode according to the specific accumulated fluence. As a scrubbing circuit was designed to reduce the accumulated number of SEUs in the SRAM, the Failure In Time (FIT) rate at sea level in New York City could be as low as 8E-11, which is robust enough for the whole circuit. [ABSTRACT FROM AUTHOR]

In this paper, eight different SRAM cells are studied and evaluated with a 65nm CMOS technology. The cells were designed with radiation-hardening-by-design approaches including schematic and layout techniques. The eight types of cells were placed into eight pages of an SRAM test chip. The alpha and proton irradiation demonstrated that the Dual Interlocked Cell (DICE) has the best radiation-tolerant performance, but requires the largest area. The 6T and 11T cells designed with charge cancellation techniques can reduce soft errors up to 2-3 times with less area overhead. Several DICE variants were developed with reduced area overhead and showed SEU resilience performance equivalent to DICE. Simulation results are also presented in this paper to validate the findings. [ABSTRACT FROM AUTHOR]

The original article can be found online at https://doi.org/10.1007/s13555-022-00852-5. B Correction to: Dermatol Ther (Heidelb) (2023) 13:299-314 b https://doi.org/10.1007/s13555-022-00852-5 The authors would like to emphasize that Minlie Yang is the corresponding author and Lihong Zhu is the co-corresponding author. [Extracted from the article]

Due to the intrinsic lack of restoring paths, dynamic logic circuits have significant single-event susceptibility, and thus, they are not preferred in applications requiring high reliability when compared to static logic. However, in high speed applications, this circuit family is still very attractive. This papers presents two layout-based single-event resilient dynamic logic designs. The resultant SET pulse is suppressed because of charge-sharing in the layout-level. Simulation results verify that they enjoy higher single event tolerance. Experimental results validate the fact that approximately 20 ~ 30 % of magnitude reduction in cross-section is achieved in both designs. On the other hand, the increase in single-event performance is achieved at the expense of power and area overheads of 10 and 15 %, respectively, using our layout style in 130 nm CMOS bulk technology. [ABSTRACT FROM AUTHOR]