Search

Optical properties of ternary superconducting planar/annular photonic crystals composed of a high-temperature superconductor and two dielectrics were theoretically investigated based on transfer matrix methods in Cartesian and cylindrical coordinates. Electrodynamics of superconductor were modelled using two-fluid model. It is of interest to observe that, for a planar structure, there exists an additional high reflectance band termed as superpolariton gap near the superconducting threshold wavelength for the TM wave at oblique incidences and some reflection dips also were found in the TM reflectance. However, the superpolariton gap and reflection dips were seen for an annular geometry at higher order azimuthal number. For an annular structure, the size of superpolariton gap can be controlled by simply adjusting the starting radius. Moreover, the superpolariton gap in both structures strongly depends on the operating temperature, different combinations of dielectric refractive indices, and thicknesses of dielectric materials. [ABSTRACT FROM AUTHOR]

Multichannel filtering properties of a one dimensional photonic crystal containing semiconductor photonic quantum well defect were theoretically investigated in the infrared region. We have considered two possible structures of photonic quantum well, symmetric ((AB)P(C1C2)Q(BA)P) and asymmetric ((AB)P(C1C2)Q(AB)P). It was found that, for a symmetric structure number of channels equal to Q + 1 whereas for asymmetric structure channel number is Q. Further it was observed that the position of channels can be tuned by means of temperature variations in semiconductor material. In addition, more channels can be generated by the use of a double photonic quantum well defect. [ABSTRACT FROM AUTHOR]

This paper explores the transmission characteristics of superconducting quasi-periodic photonic crystal structure arranged in Thue-Morse and double-period sequences. We mainly focused on the cutoff frequency of transmittance spectra. The study shows that the cutoff frequency can be appreciably tuned by generation number of sequence, thicknesses of constituent layers and operating temperature. Shifting behaviour of cutoff frequency is in contrast with periodic structure on varying superconductor thickness and temperature whereas it shows opposite trend on changing the dielectric layer thickness. It is also observed that different quasi-periodic structures show distinct values of cutoff frequency and different transmission properties. This features allow to tune the cutoff frequency or band gap in the whole infrared frequency region. [ABSTRACT FROM AUTHOR]

A high efficiency (>18%) industrial large area crystalline silicon wafer solar cell fabrication process generally requires industrial equipment with large footprint, high capital and running costs. Stricter processing window, continuous monitoring and automated functioning are the reasons for it. However, for any conventional laboratory (lab) it is always difficult to manage these requirements with limited available lab space or insufficient fund and other related resources. In this work, we report a novel way to fabricate high efficiency full area aluminium back surface field monocrystalline silicon wafer solar cells in our lab using low-cost processing with small-footprint fabrication tools for 6 inch pseudo-square industrial wafers. The novelty of our work includes optimization of every fabrication process step, e.g., texturization, emitter diffusion, emitter passivation and anti-reflection coating deposition, edge-isolation, screen printing and co-firing individually. These modifications include tuning of processing tools and processes, utility changes and inclusion of additional process steps. Beaker-based chemical processes, manual diffusion furnace, introduction of low temperature oxidation, low temperature silicon nitride deposition processes, plasma-edge isolation tool, single manual screen printer, single oven drying of metal pastes and co-firing using rapid thermal processing tools were used at our lab. For our cells, actual and active area efficiencies of 18.5 and 19% (measured under AM1.5G 1 Sun condition), respectively, were achieved. [ABSTRACT FROM AUTHOR]