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Fermi-surface (FS) nesting originating from Peierls' idea of electronic instabilities in one-dimensional materials is a key concept to stabilize charge-density wave (CDW), whereas its applicability to two-dimensional (2D) materials is under intensive debate. Here we report unusual CDW associated with the higher-order FS nesting in monolayer 2D VS2. Angle-resolved photoemission spectroscopy and scanning tunneling microscopy uncovered stripe CDW with 21 R 10. 9 ∘ × 3 R 3 0 ∘ periodicity together with an energy-gap opening on the entire FS. We suggest that this CDW involves the higher-order FS-nesting vector 2q twice larger than that of the normal one (q), as supported by the anomalies in the calculated phonon dispersion and electronic susceptibility. The present results suggest that the cooperation of q and 2q nesting leads to the fully gapped CDW state unlike the case of conventional single q nesting which produces a partial gap, pointing to an intriguing mechanism of CDW transition. [ABSTRACT FROM AUTHOR]

Topological Dirac semimetals (TDSs) offer an excellent opportunity to realize outstanding physical properties distinct from those of topological insulators. Since TDSs verified so far have their own problems such as high reactivity in the atmosphere and difficulty in controlling topological phases via chemical substitution, it is highly desirable to find a new material platform of TDSs. By angle-resolved photoemission spectroscopy combined with first-principles band-structure calculations, we show that ternary compound BaMg2Bi2 is a TDS with a simple Dirac-band crossing around the Brillouin-zone center protected by the C3 symmetry of crystal. We also found that isostructural SrMg2Bi2 is an ordinary insulator characterized by the absence of band inversion due to the reduction of spin–orbit coupling. Thus, XMg2Bi2 (X = Sr, Ba, etc.) serves as a useful platform to study the interplay among crystal symmetry, spin–orbit coupling, and topological phase transition around the TDS phase. [ABSTRACT FROM AUTHOR]

Combination of low-dimensionality and electron correlation is vital for exotic quantum phenomena such as the Mott-insulating phase and high-temperature superconductivity. Transition-metal dichalcogenide (TMD) 1T-TaS2 has evoked great interest owing to its unique nonmagnetic Mott-insulator nature coupled with a charge-density-wave (CDW). To functionalize such a complex phase, it is essential to enhance the CDW-Mott transition temperature TCDW-Mott, whereas this was difficult for bulk TMDs with TCDW-Mott < 200 K. Here we report a strong-coupling 2D CDW-Mott phase with a transition temperature onset of ~530 K in monolayer 1T-TaSe2. Furthermore, the electron correlation derived lower Hubbard band survives under external perturbations such as carrier doping and photoexcitation, in contrast to the bulk counterpart. The enhanced Mott-Hubbard and CDW gaps for monolayer TaSe2 compared to NbSe2, originating in the lattice distortion assisted by strengthened correlations and disappearance of interlayer hopping, suggest stabilization of a likely nonmagnetic CDW-Mott insulator phase well above the room temperature. The present result lays the foundation for realizing monolayer CDW-Mott insulator based devices operating at room temperature. Monolayer transition metal dechalcogenides are a promising platform to study the interplay of low-dimensionality and electron correlations. Here, the authors report a Mott insulator state in monolayer 1T-TaSe2, that survives far above room temperature and is robust against external perturbations. [ABSTRACT FROM AUTHOR]

One of important challenges in condensed-matter physics is to realize new quantum states of matter by manipulating the dimensionality of materials, as represented by the discovery of high-temperature superconductivity in atomic-layer pnictides and room-temperature quantum Hall effect in graphene. Transition-metal dichalcogenides (TMDs) provide a fertile platform for exploring novel quantum phenomena accompanied by the dimensionality change, since they exhibit a variety of electronic/magnetic states owing to quantum confinement. Here we report an anomalous metal-insulator transition induced by three-dimensional (3D)-two-dimensional (2D) crossover in monolayer 1T-VSe2 grown on bilayer graphene. We observed a complete insulating state with a finite energy gap on the entire Fermi surface in monolayer 1T-VSe2 at low temperatures, in sharp contrast to metallic nature of bulk. More surprisingly, monolayer 1T-VSe2 exhibits a pseudogap with Fermi arc at temperatures above the charge-density-wave temperature, showing a close resemblance to high-temperature cuprates. This similarity suggests a common underlying physics between two apparently different systems, pointing to the importance of charge/spin fluctuations to create the novel electronic states, such as pseudogap and Fermi arc, in these materials. [ABSTRACT FROM AUTHOR]