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Due to the poor aqueous solubility of docosahexaenoic acid (DHA), encapsulating it in egg yolk results in a reduction in the hydration properties of egg yolk powder (EYP), subsequently affecting its functional properties. In this study, the effects of vacuum low-temperature spray drying (VLTSD), high-temperature spray drying (HTSD), and freeze-drying (FD) on the hydration properties of DHA-enriched EYP were investigated. Firstly, we optimized the inlet temperature and feed rate for VLTSD (60 °C, 300 mL/h) and HTSD (170 °C, 800 mL/h), while FD was conducted under − 70 °C conditions. The most striking finding of this study was the DHA-enriched EYP prepared by VLTSD exhibited desirable solubility (54.86 g/100 g), water dispersibility (48.63%), and coefficient of stability (24.88%) during rehydration, which was well predicted by low-field NMR. Compared to HTSD and FD, the solubility increased by 16.18% and 45.17%, respectively. Furthermore, at the microscopic level, SEM images and FTIR spectra revealed that VLTSD enhanced the hydration properties by protecting the structural integrity and increasing the hydrogen bonding of the DHA-enriched EYP. The encapsulation efficiency of DHA-enriched EYP prepared by VLTSD, HTSD, and FD were 97.15%, 96.51%, and 81.31%, respectively. According to the quality analysis, VLTSD had the best protection for DHA-enriched EYP in terms of chromaticity, bulk density, storage stability, and sensory evaluation. Therefore, this study confirmed the applicability of VLTSD technology for microencapsulation of bioactive substances such as DHA to enhance the hydration properties of powders. [ABSTRACT FROM AUTHOR]

Immune checkpoint blockade therapy targeting programmed cell death protein 1 (PD-1) has revolutionized the landscape of multiple human cancer types, including head and neck squamous carcinoma (HNSCC). Programmed death ligand-2 (PD-L2), a PD-1 ligand, mediates cancer cell immune escape (or tolerance independent of PD-L1) and predicts poor prognosis of patients with HNSCC. Therefore, an in-depth understanding of the regulatory process of PD-L2 expression may stratify patients with HNSCC to benefit from anti-PD-1 immunotherapy. In this review, we summarised the PD-L2 expression and its immune-dependent and independent functions in HNSCC and other solid tumours. We focused on recent findings on the mechanisms that regulate PD-L2 at the genomic, transcriptional, post-transcriptional, translational, and post-translational levels, also in intercellular communication of tumour microenvironment (TME). We also discussed the prospects of using small molecular agents indirectly targeting PD-L2 in cancer therapy. These findings may provide a notable avenue in developing novel and effective PD-L2-targeted therapeutic strategies for immune combination therapy and uncovering biomarkers that improve the clinical efficacy of anti-PD-1 therapies. [ABSTRACT FROM AUTHOR]

The rapid development of neuro-inspired computing demands synaptic devices with ultrafast speed, low power consumption, and multiple non-volatile states, among other features. Here, a high-performance synaptic device is designed and established based on a Ag/PbZr0.52Ti0.48O3 (PZT, (111)-oriented)/Nb:SrTiO3 ferroelectric tunnel junction (FTJ). The advantages of (111)-oriented PZT (~1.2 nm) include its multiple ferroelectric switching dynamics, ultrafine ferroelectric domains, and small coercive voltage. The FTJ shows high-precision (256 states, 8 bits), reproducible (cycle-to-cycle variation, ~2.06%), linear (nonlinearity <1) and symmetric weight updates, with a good endurance of >109 cycles and an ultralow write energy consumption. In particular, manipulations among 150 states are realized under subnanosecond (~630 ps) pulse voltages ≤5 V, and the fastest resistance switching at 300 ps for the FTJs is achieved by voltages <13 V. Based on the experimental performance, the convolutional neural network simulation achieves a high online learning accuracy of ~94.7% for recognizing fashion product images, close to the calculated result of ~95.6% by floating-point-based convolutional neural network software. Interestingly, the FTJ-based neural network is very robust to input image noise, showing potential for practical applications. This work represents an important improvement in FTJs towards building neuro-inspired computing systems. Brain-inspired computing demands high-performance synapses. Here, the authors report a subnanosecond ferroelectric tunnel junction with 256 conductance states, 109 endurance, and 5.3 fJ/bit energy consumption, satisfactory to build synaptic devices. [ABSTRACT FROM AUTHOR]

Ferroelectricity can reduce the subthreshold swing (SS) of metal-oxide-semiconductor field-effect transistors (MOSFETs) to below the room-temperature Boltzmann limit of ~60 mV/dec and provides an important strategy to achieve a steeper SS. Surprisingly, by carefully tuning the polarization switching dynamics of BiFeO3 ferroelectric capacitors the SS of a commercial power MOSFET can even be tuned to zero or a negative value, i.e., the drain current increases with a constant or decreasing gate voltage. In particular, in addition to the positive SS of lower than 60 mV/dec, the zero and negative SS can be established with a drain current spanning for over seven orders of magnitude. These intriguing phenomena are explained by the ferroelectric polarization switching dynamics, which change the charge redistributions and accordingly affect the voltage drops across the ferroelectric capacitor and MOSFET. This study provides deep insights into understanding the steep SS in ferroelectric MOSFETs, which could be promising for designing advanced MOSFETs with an ultralow and tunable SS. In ferroelectric MOSFETs, the reduced subthreshold swing (SS) below Boltzmann limit has attracted great attention due to its potential in decreasing power consumption. Here, through tuning the ferroelectric switching dynamics of BiFeO3 ferroelectric capacitor, the SS of a commercial MOSFET connected with the ferroelectric capacitor is significantly reduced to be zero over seven decades of the drain current. Interestingly, the SS can even be further tuned to be negative, i.e., the drain current increases with decreasing gate voltage. The intriguing strategy to control SS from positive to negative is promising for designing advanced MOSFETs with ultralow and tunable SS. Transistors: A swing in the right direction Ferroelectric materials offer a way to control transistor operation. Metal-oxide-semiconductor field-effect transistors (MOSFETs) use an electric field, created by applying a voltage to one terminal, called the gate, to control the electrical current between two other terminals, the source and the drain. An important operating parameter for MOSFETs is the subthreshold swing, which relates the change in gate voltage to the change in current flow. A lower subthreshold swing means lower power consumption. Xiaoguang Li and Yuewei Yin and their colleagues from the University of Science and Technology of China, Hefei, showed that adding ferroelectric BiFeO3 to a commercial MOSFET and tuning its dynamics reduced the swing to zero and even made it negative, meaning the drain current increases with decreasing gate voltage. This unexpected result could be promising for designing advanced low-power consumption MOSFETs. [ABSTRACT FROM AUTHOR]

Ferroelectricity can reduce the subthreshold swing (SS) of metal-oxide-semiconductor field-effect transistors (MOSFETs) to below the room-temperature Boltzmann limit of ~60 mV/dec and provides an important strategy to achieve a steeper SS. Surprisingly, by carefully tuning the polarization switching dynamics of BiFeO3 ferroelectric capacitors the SS of a commercial power MOSFET can even be tuned to zero or a negative value, i.e., the drain current increases with a constant or decreasing gate voltage. In particular, in addition to the positive SS of lower than 60 mV/dec, the zero and negative SS can be established with a drain current spanning for over seven orders of magnitude. These intriguing phenomena are explained by the ferroelectric polarization switching dynamics, which change the charge redistributions and accordingly affect the voltage drops across the ferroelectric capacitor and MOSFET. This study provides deep insights into understanding the steep SS in ferroelectric MOSFETs, which could be promising for designing advanced MOSFETs with an ultralow and tunable SS.In ferroelectric MOSFETs, the reduced subthreshold swing (SS) below Boltzmann limit has attracted great attention due to its potential in decreasing power consumption. Here, through tuning the ferroelectric switching dynamics of BiFeO3 ferroelectric capacitor, the SS of a commercial MOSFET connected with the ferroelectric capacitor is significantly reduced to be zero over seven decades of the drain current. Interestingly, the SS can even be further tuned to be negative, i.e., the drain current increases with decreasing gate voltage. The intriguing strategy to control SS from positive to negative is promising for designing advanced MOSFETs with ultralow and tunable SS.Transistors: A swing in the right direction Ferroelectric materials offer a way to control transistor operation. Metal-oxide-semiconductor field-effect transistors (MOSFETs) use an electric field, created by applying a voltage to one terminal, called the gate, to control the electrical current between two other terminals, the source and the drain. An important operating parameter for MOSFETs is the subthreshold swing, which relates the change in gate voltage to the change in current flow. A lower subthreshold swing means lower power consumption. Xiaoguang Li and Yuewei Yin and their colleagues from the University of Science and Technology of China, Hefei, showed that adding ferroelectric BiFeO3 to a commercial MOSFET and tuning its dynamics reduced the swing to zero and even made it negative, meaning the drain current increases with decreasing gate voltage. This unexpected result could be promising for designing advanced low-power consumption MOSFETs. [ABSTRACT FROM AUTHOR]

Inorganic nanomaterials exhibit superior friction-reduction and anti-wear properties in oils. In this study, 2D layered α-zirconium phosphate (α-ZrP) nanosheets intercalated with different amines have been synthesized to study their dispersion stabilities in lubricating oil and tribological applications. The intercalated amines should be sufficiently long and lipophilic to provide stabilization to α-ZrP nanosheets in mineral oil. The results of tribological tests illustrate that with the addition of well-dispersed nanosheets, the coefficient of friction (COF) and pin volume loss reduce by ~47% and 75%, respectively. The excellent dispersion stability enables the nanosheets to flow into the contact area at the beginning, and thereby protect the rubbing surface. A reduction in the van der Waals forces between the adjacent layers induced by the intercalated amines transforms the friction between adjacent layers from pin disk to sliding, leading to a decrease in the COF under hydrodynamic lubrication. The study provides a new method to enhance the tribological properties via tuning the dispersion stabilities of nanomaterials in oils. [ABSTRACT FROM AUTHOR]

Next-generation non-volatile memories with ultrafast speed, low power consumption, and high density are highly desired in the era of big data. Here, we report a high performance memristor based on a Ag/BaTiO3/Nb:SrTiO3 ferroelectric tunnel junction (FTJ) with the fastest operation speed (600 ps) and the highest number of states (32 states or 5 bits) per cell among the reported FTJs. The sub-nanosecond resistive switching maintains up to 358 K, and the write current density is as low as 4 × 103 A cm−2. The functionality of spike-timing-dependent plasticity served as a solid synaptic device is also obtained with ultrafast operation. Furthermore, it is demonstrated that a Nb:SrTiO3 electrode with a higher carrier concentration and a metal electrode with lower work function tend to improve the operation speed. These results may throw light on the way for overcoming the storage performance gap between different levels of the memory hierarchy and developing ultrafast neuromorphic computing systems. Memristor devices based on ferroelectric tunnel junctions are promising, but suffer from quite slow switching times. Here, the authors report on ultrafast switching times at and above room temperature of 600ps in Ag/BaTiO3/Nb:SrTiO3 based ferroelectric tunnel junctions. [ABSTRACT FROM AUTHOR]

In this study, the magnetic cellulose nanomaterials, containing magnetic nanoscale zerovalent iron (nZVI) and cellulose, were prepared by a novel reduction method and characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and vibrating sample magnetometry (VSM). The XRD and XPS results demonstrated the formation of zerovalent iron nanoparticles in the nanocomposite materials. With a saturation magnetization of 57.2 emu g, the cellulose@nZVI composites could be easily separated from solutions in 30 s through the external magnetic field. We investigated the adsorption performance of the magnetic cellulose nanomaterials for As(III) removal from aqueous solutions. The experimental results showed that arsenite adsorption followed the pseudo-second-order kinetic model and Langmuir isotherm model. A maximum removal of 99.27 % was observed for an initial concentration 10 mg L, at pH 8.0, and an adsorbent dose of 1.0 g L. Considering the high adsorption capacity, fast adsorption rate, and quick magnetic separation from treated water, the cellulose@nZVI composites were expected to be an efficient magnetic adsorbent for arsenic removal from aqueous solutions. [ABSTRACT FROM AUTHOR]