1. Improved performances in Sb2Se3 solar cells based on CdS buffered TiO2 electron transport layer.
- Author
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Sun, Shuo, Zhang, Siyu, Han, Yuanyuan, Tan, Haidong, Wen, Jian, Liu, Xingyun, Sun, Yuxia, and Liu, Hongri
- Abstract
The strong Ti-O bonds in TiO
2 and poor compatibility with Sb2 Se3 result in poor performance when used as electron transport layers (ETL) for Sb2 Se3 solar cells. Therefore, cadmium sulfide is usually used as a buffer layer to improve its compatibility. In the present work, we deposited a layer of CdS by spin coating method on TiO2 ETL and fabricated TiO2 /CdS dual ETL. The CdS layer improved the electronic properties of TiO2 and grain orientation of Sb2 Se3 thin films. As a result, the average short circuit current and fill factor of Sb2 Se3 solar cells were improved, and the final champion power conversion efficiency was enhanced from 2.6% to 4.71%. This study supplied a route for the application of titanium dioxide as a broad band gap electron transfer material for Sb2 Se3 solar cells. Highlights: We adopt a facile spin-coating method to fabricated CdS buffer layer on TiO2 electron transport layer. The CdS buffer layer altered the orientation of Sb2 Se3 film and enhanced its performance. The champion PCE of Sb2 Se3 solar cells was enhanced to 4.71% from 2.60% by inserting the CdS buffer layer. [ABSTRACT FROM AUTHOR]- Published
- 2024
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