1. High-performance near-infrared OLEDs maximized at 925 nm and 1022 nm through interfacial energy transfer.
- Author
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Hung, Chieh-Ming, Wang, Sheng-Fu, Chao, Wei-Chih, Li, Jian-Liang, Chen, Bo-Han, Lu, Chih-Hsuan, Tu, Kai-Yen, Yang, Shang-Da, Hung, Wen-Yi, Chi, Yun, and Chou, Pi-Tai
- Subjects
ENERGY transfer ,ORGANIC light emitting diodes ,DELAYED fluorescence ,LIGHT emitting diodes ,PHOSPHORESCENCE ,TRANSFER printing ,IMPRINTED polymers ,QUANTUM efficiency ,FLUORESCENT dyes - Abstract
Using a transfer printing technique, we imprint a layer of a designated near-infrared fluorescent dye BTP-eC9 onto a thin layer of Pt(II) complex, both of which are capable of self-assembly. Before integration, the Pt(II) complex layer gives intense deep-red phosphorescence maximized at ~740 nm, while the BTP-eC9 layer shows fluorescence at > 900 nm. Organic light emitting diodes fabricated under the imprinted bilayer architecture harvest most of Pt(II) complex phosphorescence, which undergoes triplet-to-singlet energy transfer to the BTP-eC9 dye, resulting in high-intensity hyperfluorescence at > 900 nm. As a result, devices achieve 925 nm emission with external quantum efficiencies of 2.24% (1.94 ± 0.18%) and maximum radiance of 39.97 W sr
−1 m−2 . Comprehensive morphology, spectroscopy and device analyses support the mechanism of interfacial energy transfer, which also is proved successful for BTPV-eC9 dye (1022 nm), making bright and far-reaching the prospective of hyperfluorescent OLEDs in the near-infrared region. The low photoluminescence quantum yield of near-infrared (NIR) emitters has limited their application in organic light-emitting diodes (OLEDs). Here, authors realize NIR OLEDs through interfacial energy transfer from platinum(II) complexes to a non-fullerene acceptor based on a sandwiched structure. [ABSTRACT FROM AUTHOR]- Published
- 2024
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