1. A novel, nanocrystal (nc) based non-volatile memory device
- Author
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Young Kim, Jeff D. Bude, Marty L. Green, Richard C. Flagan, Jan W. De Blauwe, Tom W. Sorsch, Garry R. Weber, Andi Kerber, Michele L. Ostraat, Harry A. Atwater, and F. Klemens
- Subjects
Non-volatile memory ,Materials science ,Fabrication ,Nanocrystal ,business.industry ,Potential candidate ,Optoelectronics ,business - Abstract
This paper describes the fabrication, and structural and electrical characterization of a new, aerosol-nanocrystal floating-gate FET, aimed at non-volatile memory (NVM) applications. This aerosol- nanocrystal NVM device features program/erase characteristics comparable to conventional stacked gate NVM devices, excellent endurance (>105 P/E cycles), and long-term non-volatility in spite of a thin bottom oxide (55-60Å). In addition, a very simple fabrication process makes this aerosol-nanocrystal NVM device a potential candidate for low cost NVM applications.
- Published
- 2000