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We successfully fabricated dye sensitized solar cells (DSSCs) employing a quasi-solid state electrolyte based on pristine insulator natural rubber latex from Hevea brasiliensis and iodide electrolyte. Optimized devices exhibited a maximum power conversion efficiency (PCE) of 1.14% under simulated sunlight with 90 mW/cm2 illumination, 0.46% under 100 mW/cm2 and 7.85% under low intensity illumination of 1000 lx (Daylight LED). This gives a new perspective for the introduction of natural rubber latex abundant in nature as an additive to the water based redox mediator in order to improve the PCE in DSSC. A detailed study on the interfacial charge transfer in fabricated devices revealed that the introduction of rubber helped in arresting the back electron transfer, which was predominant in aqueous electrolyte based dye sensitized solar cell. This opens up opportunities for water-based electrolyte based on natural raw materials to be used in nature inspired DSSC technology.

Undoped zinc oxide (ZnO) and nitrogen-doped zinc oxide (NZO) thin films were prepared on transparent conducting oxide-coated glass substrates by employing sol–gel technique. The effect of different solvents and nitrogen doping on the optical, structural, and electrical properties was investigated by UV–visible absorption spectroscopy, atomic force microscopy (AFM), X-ray diffraction (XRD), profilometry, and Hall effect studies. ZnO films yielded transmittance above 85% and the bandgap of ZnO thin films decreased with doping. XRD pattern confirmed hexagonal wurtzite structure of ZnO. NZO thin films were found to be in the nano-thin film phase with thickness of 40 nm. Hall effect studies yielded carrier concentration of 1.2 × 1015 cm−3 and 2.03 × 1014 cm−3, respectively, for undoped and doped ZnO thin films. The changes in vibrational modes of ZnO due to nitrogen doping were detected using Fourier transform infrared (FTIR) analysis. It was found that p-type doping, leading to an improved surface morphology, led to a reduction in optical bandgap and an increased charge carrier mobility. The choice of the solvent was found to have a profound influence on the surface morphology, optical bandgap, tail states distribution, and charge carrier mobility.

Organic field-effect transistors were fabricated with quaterthiophene as the active material and various polymeric dielectrics as the gate insulator. The conduction parameters such as mobility, threshold voltage, subthreshold swing, the maximum density of surface states etc. were found out. The performances of the devices were compared with respect to the dielectric constant, thickness and surface morphology of the gate insulator and the leakage current through the gate. Out of the three dielectrics investigated viz. parylene-C, cyanoethylpullulan and poly(methylmethacrylate); parylene-C was found to be best suited for applications in organic FETs.