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Start Over Author "Mahendra DC" Publisher springer science and business media llc
2 results on '"Mahendra DC"'

1. Observation of anti-damping spin–orbit torques generated by in-plane and out-of-plane spin polarizations in MnPd3

Author

Mahendra DC, Ding-Fu Shao, Vincent D.-H. Hou, Arturas Vailionis, P. Quarterman, Ali Habiboglu, M. B. Venuti, Fen Xue, Yen-Lin Huang, Chien-Min Lee, Masashi Miura, Brian Kirby, Chong Bi, Xiang Li, Yong Deng, Shy-Jay Lin, Wilman Tsai, Serena Eley, Wei-Gang Wang, Julie A. Borchers, Evgeny Y. Tsymbal, and Shan X. Wang

Subjects
Mechanics of Materials, Mechanical Engineering, General Materials Science, General Chemistry, Condensed Matter Physics
Published
2023
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2. Room-temperature high spin–orbit torque due to quantum confinement in sputtered BixSe(1–x) films

Author

Mahendra DC, Roberto Grassi, Jun-Yang Chen, Mahdi Jamali, Danielle Reifsnyder Hickey, Delin Zhang, Zhengyang Zhao, Hongshi Li, P. Quarterman, Yang Lv, Mo Li, Aurelien Manchon, K. Andre Mkhoyan, Tony Low, and Jian-Ping Wang

Subjects
Coupling, Physics, Condensed matter physics, Silicon, Mechanical Engineering, chemistry.chemical_element, Heterojunction, 02 engineering and technology, General Chemistry, Substrate (electronics), 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, 7. Clean energy, Condensed Matter::Materials Science, chemistry, Mechanics of Materials, Topological insulator, 0103 physical sciences, Perpendicular, General Materials Science, Thin film, 010306 general physics, 0210 nano-technology, Current density
Abstract

The spin-orbit torque (SOT) arising from materials with large spin-orbit coupling promises a path for ultra-low power and fast magnetic-based storage and computational devices. We investigated the SOT from magnetron-sputtered BixSe(1-x) thin films in BixSe(1-x)/CoFeB heterostructures by using a dc planar Hall method. Remarkably, the spin Hall angle (SHA) was found to be as large as 18.83, which is the largest ever reported at room temperature (RT). Moreover, switching of a perpendicular CoFeB multilayer using SOT from the BixSe(1-x) has been observed with the lowest-ever switching current density reported in a bilayer system: 2.3 * 105 A/cm2 at RT. The giant SHA, smooth surface, ease of growth of the films on silicon substrate, successful growth and switching of a perpendicular CoFeB multilayer on BixSe(1-x) film opens a path for use of BixSe(1-x) topological insulator (TI) material as a spin-current generator in SOT-based memory and logic devices.

Published
2018
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