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This study investigates stock recommendations from the three largest finance subreddits on Reddit: wallstreetbets, investing and stocks. A simple strategy that buys recommended stocks weighted by the number of posts per day yields a portfolio with higher average returns at the expense of higher risks than the market for all holding periods, i.e., unfavorable Sharpe ratios. Furthermore, the strategy leads to positive (insignificant) short-term and negative (significant) long-term alphas when considering common risk factors. This is consistent with the idea of “meme stocks”, meaning that the recommended stocks are artificially inflated in the short term when they are recommended, and that the posts contain no information about long-term success. However, it is likely that Reddit users, especially on the subreddit wallstreetbets, have preferences for bets which are not captured by the mean–variance framework. Therefore, we draw on cumulative prospect theory (CPT). We find that the CPT-valuations of the Reddit portfolio exceed those of the market, which may explain the persistent attractiveness for investors to follow social media stock recommendations despite the unfavorable risk-return ratio.

The epidermal growth factor receptor (EGFR) represents an important molecular target for both radiotracer-based diagnostic imaging and radionuclide therapy of various cancer entities. For the delivery of radionuclides to the tumor, peptides hold great potential as a transport vehicle. With respect to EGFR, the peptide YHWYGYTPQNVI (GE11) has been reported to bind the receptor with high specificity and affinity. In the present study, GE11 with β-alanine (β-Ala-GE11) was conjugated to the chelating agent p-SCN-Bn-NOTA and radiolabeled with 64Cu for the first radio pharmacological evaluation as a potential probe for positron emission tomography (PET)-based cancer imaging. For better water solubility, an ethylene glycol-based linker was introduced between the peptide’s N terminus and the radionuclide chelator. The stability of the 64Cu-labeled peptide conjugate and its binding to EGFR-expressing tumor cells was investigated in vitro and in vivo, and then compared with the 64Cu-labeled EGFR-targeting antibody conjugate NOTA-cetuximab. The GE11 peptide conjugate [64Cu]Cu-NOTA-linker-β-Ala-GE11 ([64Cu]Cu-1) was stable in a buffer solution for at least 24 h but only 50% of the original compound was detected after 24 h of incubation in human serum. Stability could be improved by amidation of the peptide’s C terminus (β-Ala-GE11-NH2 (2)). Binding assays with both conjugates, [64Cu]Cu-1 and [64Cu]Cu-2, using the EGFR-expressing tumor cell lines A431 and FaDu showed no specific binding. A pilot small animal PET investigation in FaDu tumor-bearing mice revealed only low tumor uptake (standard uptake value (SUV)

Within a very few years, InAs/GaSb superlattice technology has proven its suitability for high-performance infrared imaging detector arrays. At the Fraunhofer Institute for Applied Solid State Physics (IAF) and AIM Infrarot-Module GmbH, efforts have been focused on developing mature fabrication technology for dual-color InAs/GaSb superlattice focal-plane arrays for simultaneous, colocated detection at 3 µm to 4 µm and 4 µm to 5 µm in the mid-wavelength infrared atmospheric transmission window. Integrated into a wide-field-of-view missile approach warning system for an airborne platform, a very low number of pixel outages and cluster defects is mandatory for bispectral detector arrays. Process refinements, intense root-cause analysis, and specific test methodologies employed at various stages during the process have proven to be the key for yield enhancements.

In this paper we review recent progress achieved in our development of type-I GaInAsSb/AlGaAsSb quantum-well (QW) lasers with emission wavelength in the 1.74–2.34 μm range. Triple-QW (3-QW) and single-QW (SQW) diode lasers having broadened waveguide design emitting around 2.26 μm have been studied in particular. Comparing the two designs we have find that the threshold current density at infinite cavity length as well as the transparency current density scale with the number of QWs. Maximum cw operating temperature exceeding 50°C and 90°C has been obtained for ridge waveguide lasers emitting above and below 2 μm, respectively. Ridge waveguide diode lasers emitting at 1.94 μm exhibited internal quantum efficiencies in excess of 77%, internal losses of 6 cm−1, and threshold current density at infinite cavity length as low as 121 A/cm2 reflecting the superior quality of our diode lasers, all values recorded at 280 K. A high characteristic temperature TOof 179 K for the threshold current along with a value of T1 = 433 K for the characteristic temperature of the external efficiency have been attained for the 240–280 K temperature interval. Room temperature cw output powers exceeding 1.7 W have been demonstrated for broad area single element devices with highreflection/ antireflection coated mirror facets, mounted epi-side down. The latter result is a proof for the high power capabilities of these GaSb-based mid-ir diode lasers.

We report on room temperature cw operation of type-I semiconductor quantum well (QW) laser diodes based on the GaInAsSb/AIGaAsSb/GaSb material system emitting beyond 2.2 µm. Lasing is observed in cw mode up to at least 320 K. A high internal quantum efficiency of 65% and a low internal loss coefficient of 5 cm1have been achieved for a single QW (SQW)large optical cavity laser at 280 K. An extrapolated threshold current density for infinite cavity length of 144 A/cm2and 55 A/cm2has been deduced for the 3 QW and SQW lasers, respectively, which scales with the number of QWs. A maximum cw light output power of 230 mW at 280 K heatsink temperature was obtained for a 3 QW large optical cavity laser with HR/AR coated mirror facets, mounted substrate-side down.

The optical and electrical properties of InAs/GaInSb superlattice mesa photodiodes with a cutoff wavelength around 8 pim are investigated. The influence of the surface potential at the mesa sidewalls on the device properties was studied by fabricating gate-controlled diodes. At least two mechanisms determining the dark current in the reverse bias region can be identified. At high reverse biases bulk bandto- band tunneling dominates while the current at low reverse biases is most likely governed by surface effects. Bulk interband tunneling is further investigated by applying magnetic fields B up to 7 T parallel and perpendicular to the electric field E across the p-n junction.