13 results on '"Palmour, John W."'
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2. Comparison of channel mobility and oxide properties of MOSFET devices on Si-face (0001) and A-face (11-20) 4H-SiC
3. Improvement of Minority Carrier Lifetime in Thick 4H-SiC Epi-layers by Multiple Thermal Oxidations and Anneals
4. Static Performance of 20 A, 1200 V 4H-SiC Power MOSFETs at Temperatures of −187°C to 300°C
5. Do You Really Expect To Grow Epilayers On That? A Rationale For Growing Epilayers On Roughened Surfaces
6. Development of A 4H-SiC CMOS Inverter
7. Reliability of Nitrided Oxides in N- and P-type 4H-SiC MOS Structures
8. 4H-SIC Dmosfets for High Frequency Power Switching Applications
9. SiC BJT's for High Power Switching and RF Applications
10. Design and Process Issues for Silicon Carbide Power DiMOSFETS
11. High Power and High Frequency Silicon Carbide Devices
12. Surface Characteristics of Monocrystalline ß-SiC dry etched in fluorinated gases
13. Wet and Dry Oxidation of Single Crystal β-SiC: Kinetics and Interface Characteristics
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