1. Linearity Performance and Harmonic Distortion Analysis of IGE Junctionless Silicon Nanotube-FET for Wireless Applications
- Author
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Sandip Bhattacharya, Parveen Singla, Deboraj Muchahary, J. Ajayan, Shubham Tayal, and Biswajit Jena
- Subjects
Total harmonic distortion ,Silicon nanotube ,Materials science ,business.industry ,Transconductance ,Linearity ,RFIC ,Wireless ,Optoelectronics ,Point (geometry) ,business ,Electronic, Optical and Magnetic Materials ,Communication channel - Abstract
This manuscript investigates the effect of inner gate engineering (IGE) on the linearity and harmonic distortion performance of junctionless (JL) silicon-nanotube (Si-NT) FETs for wireless applications. The three configurations of JL-Si-NT-FET namely DS-JL-Si-NT-FET (inner gate covers drain & source regions both in addition to channel region), D--JL-Si-NT-FET (inner gate covers only drain region and channel region), and S--JL-Si-NT-FET (inner gate covers only source region and channel region) are compared to find the best configuration for wireless applications. The simulation results divulge that S--JL-Si-NT-FET configurations shows the improved linearity and harmonic distortion performance in terms of the performance metrics HD2, HD3, VIP3, IIP3, 1-db compression point, and higher order coefficients of transconductance (gm2 & gm3). Consequently, the S-JL-Si-NT-FET is the best configuration to be used for RFIC design and wireless applications.
- Published
- 2021