Search

Your search keyword '"Potts H"' showing total 14 results
Start Over Author "Potts H" Publisher springer science and business media llc
14 results on '"Potts H"'

1. An app with brief behavioural support to promote physical activity after a cancer diagnosis (APPROACH): study protocol for a pilot randomised controlled trial

Author

Lally, P., primary, Miller, N., additional, Roberts, A., additional, Beeken, R. J., additional, Greenfield, D. M., additional, Potts, H. W. W., additional, Counsell, N., additional, Latimer, N., additional, Thomas, C., additional, Smith, L., additional, Gath, J., additional, Kennedy, F., additional, Martin, C., additional, Wyld, L., additional, and Fisher, A., additional

Published
2022
Full Text
View/download PDF

2. Fundamental aspects to localize self-catalyzed III-V nanowires on silicon

Author

Massachusetts Institute of Technology. Department of Materials Science and Engineering, Vukajlovic-Plestina, J, Kim, W, Ghisalberti, L, Varnavides, G, Tütüncuoglu, G, Potts, H, Friedl, M, Güniat, L, Carter, WC, Dubrovskii, VG, Fontcuberta i Morral, A, Massachusetts Institute of Technology. Department of Materials Science and Engineering, Vukajlovic-Plestina, J, Kim, W, Ghisalberti, L, Varnavides, G, Tütüncuoglu, G, Potts, H, Friedl, M, Güniat, L, Carter, WC, Dubrovskii, VG, and Fontcuberta i Morral, A

Abstract

© 2019, The Author(s). III-V semiconductor nanowires deterministically placed on top of silicon electronic platform would open many avenues in silicon-based photonics, quantum technologies and energy harvesting. For this to become a reality, gold-free site-selected growth is necessary. Here, we propose a mechanism which gives a clear route for maximizing the nanowire yield in the self-catalyzed growth fashion. It is widely accepted that growth of nanowires occurs on a layer-by-layer basis, starting at the triple-phase line. Contrary to common understanding, we find that vertical growth of nanowires starts at the oxide-substrate line interface, forming a ring-like structure several layers thick. This is granted by optimizing the diameter/height aspect ratio and cylindrical symmetry of holes, which impacts the diffusion flux of the group V element through the well-positioned group III droplet. This work provides clear grounds for realistic integration of III-Vs on silicon and for the organized growth of nanowires in other material systems.

Published
2021

Catalog

Books, media, physical & digital resources
See catalog results