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We report on the properties of laser-induced plasma plumes generated by ns pulsed excimer lasers as used for pulsed laser deposition to prepare thin oxide films. A focus is on the time and spatial evolution of chemical species in the plasma plume as well as the mechanisms related to the plume expansion. The overall dynamics of such a plume is governed by the species composition in particular if three or more elements are involved. We studied the temporal evolution of the plume, the composition of the chemical species in the plasma, as well as their electric charge. In particular, ionized species can have an important influence on film growth. Likewise, the different oxygen sources contributing to the overall oxygen content of an oxide film are presented and discussed. Important for the growth of oxide thin films is the compositional transfer of light element such as oxygen or Li. We will show and discuss how to monitor these light elements using plasma spectroscopy and plasma imaging and outline some consequences of our experimental results., Applied Physics A, 129 (2), ISSN:0947-8396, ISSN:1432-0630, ISSN:0340-3793

Amorphous InGaN films were deposited on p-Si(100) substrates using a self-refited pulsed laser deposition system with double laser light paths and two-component target. The effects of laser energy on the microstructure, electrical and photovoltaic performances of InGaN films as well as n-InGaN/p-Si heterojunction solar cells were investigated. The results show that all the films are rich in Ga and poor in In, and the (In + Ga)/N atomic ratios are greater than 1. As the laser energy increases, In composition increases gradually and reaches to a maximum of 4.6 at.%. The PL spectra indicates that the band gap of the films decrease with the increase of laser energy. Meanwhile, the resistivity of InGaN film is decreased in two orders of magnitude due to the increasing of carrier concentration. Under the illumination of AM 1.5G solar simulator, the maximum power conversion efficiency of amorphous n-InGaN/p-Si heterojunction solar cells is 0.73% with an open circuit voltage of 2.41 V and short current density of 0.69 mA/cm2 at the laser energy of 175 mJ/pulse.

The structural and electrical transport properties of Ge ion-implanted CoSb3 thin films were investigated. These thin films were deposited by pulsed laser deposition on the quartz substrates and 100 keV Ge ions were implanted with the ion fluences ranging from 5 × 1014, 1 × 1015 to 5 × 1015 ions/cm2. Scanning electron microscopy shows an enlargement in grains with the increase of ion fluence which is attributed to the contribution from local annealing and the creation of ion-induced defects. The electrical resistivity (ρ) measurements indicate that Ge implantation strongly influences the temperature-dependent resistivity and hence affect the charge carriers. The decrease in mobility and an increase in carrier concentration with the ion fluences lead to a decrease in electrical resistivity. The conduction mechanism study reveals that this system exhibits Mott type variable range hopping characteristics (ln ρ $$\propto$$ 1/T1/4) in the low-temperature regime for all the samples and follow the small polaron hopping conduction mechanism, ln (ρ/T) $$\propto$$ 1/T, at high temperature up to 400 K. The room temperature Hall effect measurement and the temperature-dependent Seebeck effect reveal that these films are of n-type.

We report the fabrication and demonstration of perovskite-based photodetector-response in the lateral device geometry. Two different types of detectors were fabricated and compared to study the effects of the lateral and radial electric field on device response. The first type of device consisted of a 2D (BA2MAn−1PbnBr3n+1)/3D (CsPbBr3) perovskite heterojunction and the second consisted of MoS2/CsPbBr3 in the active layer. High-quality perovskite films were deposited by thermal evaporation and the presence of distinct phases was confirmed by x-ray diffraction and PL studies. Additionally, MoS2 thin films were grown by pulsed laser deposition with Raman measurements showing the presence of a few layers of MoS2. The photoresponse of the 2D/3D perovskite halide device was measured under monochromatic illumination in the UV–Visible region. These 2D/3D based devices exhibit a responsivity, external quantum efficiency and linear dynamic range of 1.02 A/W, 276.6% and 77 dB, respectively, at 1-V operational bias. The photoresponse of the MoS2/CsPbBr3 devices were measured under 385 nm illumination and the responsivity, sensitivity, external quantum efficiency and specific detectivity at 10 V bias were found to be 0.4 mA/W, 1.2, 0.13% and 3.5 × 109 Jones, respectively.

Here, we report on the fabrication of Nb-doped SrTiO3 (SrTi0.90Nb0.10O3) thin films of various thicknesses (50 to 375 nm) using pulsed laser deposition. X-ray diffraction studies reveal that the SrTi0.90Nb0.10O3 films are polycrystalline in nature with texturing along the (110) direction. XPS studies show that Nb replaces Ti confirming B-site doping. We demonstrate that the band gap of the SrTi0.90Nb0.10O3 thin films exhibit a blue shift of ~ 340 meV with decrease in thickness from 375 to 50 nm. Impedance spectroscopic studies at various temperatures (30–150 °C) suggested that the dc conductivity of the films increases with increase in temperature suggesting a thermal activation of niobium donor in the films.

α -vanadium pentoxide (α-V2O5) thin films with the orthorhombic crystal structure were successfully grown on Si-substrates using pulsed laser deposition (PLD) technique with varying substrate temperatures. XRD spectra confirm the formation of orthorhombic V2O5 phase which is evident as the strongest peak at ~ 20.38°. The films are apparently crystalline in nature, and the average crystallite size ranges between ~ 200 nm–~ 400 as obtained from Scherrer’s equation. FESEM image shows the films as compact nanostructured type displaying a globular (at 500 °C) or sheath like morphology (at 600 °C and 700 °C). AFM study shows that the average surface roughness of V2O5 films increases with increasing substrate temperature. UV–vis spectroscopy shows that the fundamental absorption edge has shifted to the red side (higher wavelength) with increasing temperature. Optical band gap values (Eg) decrease with increasing deposition temperature (at 700 °C, Eg ~ 2.08 eV).

Abstract Pseudomorphic and relaxed $$\alpha$$ α -(Al$$_x$$ x Ga$$_{1-x}$$ 1 - x )$$_2$$ 2 O$$_3$$ 3 thin films are grown by combinatorial pulsed laser deposition in the entire composition range on prismatic a- and m-plane $$\alpha$$ α -Al$$_2$$ 2 O$$_3$$ 3 substrates. Pseudomorphic growth on m-plane sapphire has been achieved for $$x \ge 0.45$$ x ≥ 0.45 . A distinct difference between the a- and m-epitaxial plane is observed in reciprocal space map measurements being in agreement with continuum elasticity theory for rhombohedral heterostructures. While pseudomorphic layers on m-plane sapphire show a pronounced shear strain $$e'_5$$ e 5 ′ along the c-axis direction, relaxed layers exhibit a global lattice tilt in the same direction. Both effects are not present on the a-epitaxial plane. Out-of-plane lattice constants as well as $$e'_5$$ e 5 ′ are modeled as function of x employing elasticity theory, confirming theoretical values of the elastic stiffness tensor for $$\alpha$$ α -Ga$$_2$$ 2 O$$_3$$ 3 , especially the non-zero value of the $$C_{14}$$ C 14 component. Possible pyramidal slip systems for strain relaxation in c-axis direction are examined to explain and numerically model the difference in lattice tilt for the two substrate orientations. Graphic abstract

Bi2Te3-based alloys are known to have outstanding thermoelectric properties. Although structure-property relations have been studied, still, detailed analysis of the atomic and nano-scale structure of Bi2Te3 thin film in relation to their thermoelectric properties remains poorly explored. Herein, highly-textured (HT) and single-crystal-like (SCL) Bi2Te3 films have been grown using pulsed laser deposition (PLD) on Si wafer covered with (native or thermal) SiOx and mica substrates. All films are highly textured with c-axis out-of-plane, but the in-plane orientation is random for the films grown on oxide and single-crystal-like for the ones grown on mica. The power factor of the film on thermal oxide is about four times higher (56.8 mu W.cm(-1).K-2) than that of the film on mica (12.8 mu W.cm(-1).K-2), which is comparable to the one of the polycrystalline ingot at room temperature (RT). Reduced electron scattering in the textured thin films results in high electrical conductivity, where the SCL film shows the highest conductivity. However, its Seebeck coefficient shows a low value. The measured properties are correlated with the atomic structure details unveiled by scanning transmission electron microscopy. For instance, the high concentration of stacking defects observed in the HT film is considered responsible for the increase of Seebeck coefficient compared to the SCL film. This study demonstrates the influence of nanoscale structural effects on thermoelectric properties, which sheds light on tailoring thermoelectric thin films towards high performance.

This manuscript deals with the investigation of the impact of target-to-substrate distance on the linear and nonlinear optical properties of a-plane oriented aluminum-doped ZnO (ZnO:Al) thin films synthesized by the pulsed laser deposition (PLD) technique. X-ray diffraction studies proclaim an increment in the crystallinity with a decrement in target-to-substrate distance from 6 to 3 cm, attributed to increased thickness, decrease in stress, and defect levels in the thin films. A relaxation in the stress induces a decrease in the energy gap (3.47–3.37 eV) with a reduction in target–substrate distance from 6 to 3 cm is observed from UV–visible spectroscopic analysis. Spectroscopic ellipsometry confirms an increment in the refractive index and extinction coefficient with a decrease in target-to-substrate distance. From the Photoluminescence spectrum, the presence of low defect levels in the ZnO:Al thin films prepared at a shorter target-to-substrate distance is observed. The induced absorption (RSA) and self-defocusing process of ZnO:Al thin films are revealed by open aperture and closed aperture Z-scan measurements at 532 nm wavelength. The optical limiting behavior of all the thin films strongly suggests their applicability in optical power limiting. Thus, the present study emphasizes the optimization of the target-to-substrate distance to tailor the structural, linear, and nonlinear optical properties of the a-plane oriented ZnO:Al thin films.

A series of β-Ga2O3 films were prepared on polished Al2O3 substrates by pulsed laser deposition at temperatures between 580 and 780 °C were characterized by X-ray diffraction, atomic force microscope, scanning electron microscope, spectrophotometer, and spectrofluorometer. As the growth temperature increases, the phase changed from amorphous to polycrystalline β-Ga2O3 structure, the thickness of β-Ga2O3 films decreases from 173 to 137 nm, and the average grain size increases from 14.2 to 34.7 nm. The band gap of β-Ga2O3 film deposited at 780 °C is calculated to be 4.88 eV which is close to the Ga2O3 bulk. The photoluminescence intensity increases with the increasing growth temperature and the spectra can be divided into four emission bands located at UV and blue region, which are due to the recombination of self-strapped holes at O(1) sites and between two (O)2-s sites, and tunneling-trapped holes from $${V}_{\text{Ga}}^{2-}$$ at Ga(1) tetrahedral sites.

This paper describes an experimental corrosion study performed on austenitic stainless steel deposited mild steel substrate in 0.5 M sodium chloride medium. The study was performed with an aim to improve the corrosion resistance of mild steel substrate through surface deposition of a thin film of asutenitic stainless steel. The thin SS film was deposited by pulse laser deposition technique while using 316 L grade stainless steel foil as a target. Thin film deposition of 316 L stainless steel on mild steel brought about relative improvement in its resistance against corrosion. However, with respect to 316 L stainless steel foil, the specimen exhibited poor corrosion resitance in terms of corrosion rate (corrosion current density), lack of passivity and pitting potential. The reason for the inferior corrosion behaviour of deposited specimen is attributed to defective ferritic microstructure of the thin film and lack of nickel constituent which was associated with lower resistance and higher capacitance with respect to 316 L stainless steel foil. Similarly, with respect to mild steel, deposited mild steel showed better corrosion resistance due to passive role of chromium enriched film.

The optical properties of these films were measured using UV/Vis spectrophotometer. The optical parameters; energy gap (Eg), refractive index (n), extinction coefficient (k), the optical energy gap affected strongly by changing the substrate type. Moreover both of oscillating energy (Eo), dispersion energy (Ed), the effective mass of these films with different substrate had been calculated optically, another important parameters, such as the dielectric constant (e\) and dielectric loss (e\\) and both of the real part (σ1) and imaginary part (σ2) of optical conductivity were determined. The ratio of VEL to SEL as functions of photon energy for Y0.225Sr0.775CoO3 films was calculated optically. Finally, the density of both valence band (NV) and conduction band (NC) for these films has been calculated. The dielectric constants for these films were determined.

Semiconductors are considered promising materials of thermo-converters and thermo-sensors. The photons generated by a KrF laser source (λ = 248 nm, τFWHM ≤ 25 ns) were used for the synthesis of stable crystalline phases of copper oxides 2D single-layered semiconductor structures via the reaction of ablated copper atoms with oxygen molecules by reactive pulsed laser deposition (RPLD). Obtained semiconductor 2D single-layered structures of (23–75) nm thickness were deposited on 293, 600 or 800 K Si substrates in oxygen atmosphere at 1.0, 3.0 and 5.0 Pa. X-ray diffraction analysis evidenced polycrystalline structures of the deposits reviled of two crystalline semiconductor phases CuO (002) and CuO(111). Semiconductor temperature trend was detected with variable energy band gap (Eg) in the range of (0.10–1.5) eV depending on substrate temperature, oxygen pressure and structure thickness. The optimum conditions were found out when the S coefficient was being homogeneously increased from 2.0 mV/K up to 10.5 mV/K and thermoelectric figure of merit (ZT) from 0.0035 up to 9.0 in the range of (290–340) K. The interpretation of behaviour for these 2D single-layered semiconductor structures of thermoelectric properties was provided. Obtained 2D single-layered structures based on copper oxides with such high S coefficient and high ZT are exceptionally strong candidates for a new effective thermo-sensors and thermo-converters operating at moderate temperature. Moreover, RPLD serves as an up to date method for the synthesis of 2D structures with such superior thermo-sensor and thermo-converter properties. These 2D single-layered structures based on copper oxides are among the most promising candidates based on non-toxic precursors for “green” technology fabrication of efficient thermo-sensors and thermo-converters.

Transparent conducting (TC) films based on Al and In co-doped ZnO (AIZO) are deposited at room temperature (RT) onto glass as well as flexible polyethylene terephthalate (PET) substrates by pulsed laser deposition (PLD) technique. While substrate heating becomes inevitable to obtain enough conductivity of the oxide films, we simply by controlling the chamber O2 pressure (3 × 10–3 to 1.5 × 10–2 mbar) have achieved the desired structural, electrical and optical properties of the AIZO films without the need to heat the substrate. All the co-doped films having hexagonal wurtzite structure of ZnO shows surface roughness values in the range of 2.3–4.4 nm. The average transparency of the films is 79–92% in the 400–700 nm range. The film deposited at O2 pressure of 3 × 10–3 mbar on glass substrate shows the highest carrier concentration value of 1.60 × 1021 cm−3 with the lowest sheet resistance of 30.47 Ω/sq as well as the lowest roughness value of 2.3 nm. The best condition used for the AIZO film deposited on PET substrate shows unprecedentedly low sheet resistance of only 32.63 Ω/sq which opens up enormous possibility for flexible electronics.

This study explores a novel WNbMoTaV high-entropy thin film (HETF) in amorphous structure via pulsed laser deposition system. The formation of amorphous structure of this high-entropy alloy is ascribed to the high cooling rate during the deposition process. The HETF shows a smooth surface with a height fluctuation of less than 13 nm. This film has a high electrical resistivity of ~ 320.6 μΩ∙cm and a low corrosion current density of 0.088 μA/cm2. The corrosion resistance of the HETF at ambient temperature is superior to the conventional AISI 316L stainless steel. The high electrical resistivity and excellent corrosion resistance of the HETF are mainly attributed to its chemical disorder, cocktail effect and homogeneous amorphous structure. This experimental phenomenon not only provides a basis for the preparation of amorphous alloy films with low glass forming ability by pulsed laser deposition system, also promotes the potential application of WNbMoTaV HETF in the microelectronic components as resistivity sensors.

Innovative material configurations obtained by incorporating two-dimensional (2D) layers of MoS2 (a two-dimensional material) with Fe doped ZnO (Fe:ZnO) thin films are found to exhibit high thermoelectric properties at lower temperature. The low dimensionality of material (MoS2) is expected to enhance the thermoelectric power factor because of the strong confinement of charge carriers. MoS2 layers have been incorporated in the Fe:ZnO thin film by depositing MoS2 layers over Fe:ZnO thin film and by fabricating the multilayered structure of MoS2 layers with Fe:ZnO. The fabricated structures were characterized for their structural, optical and morphological properties using the available characterization tools. The multilayer configuration of the MoS2 and Fe:ZnO (FZnMFZn) sample was found to exhibit higher values of power factor of 1.06 × 10−3 W/mK2 and figure of merit (ZT) of 3.11 × 10−2 at a very low operating temperature of 300 K. The obtained results highlight the importance of charge confinement in improving the thermoelectric properties of the multilayered structure (FZnMFZn thin film sample) indicating that it is a promising candidate for practical applications.

Photodetector is one the most intensively investigated opto-electronic devices as it readily converts optical signal into electrical current. Large area heterojunction-based photodetectors have great potential due to efficient light harvesting abilities. Herein, we report the n-Zn1−xMgxO/p-Si heterojunction-based photodetector for detection of 390 nm light. Pulse laser deposition technique has been employed for large area (1 × 1 cm2) and atomically thin film of Zn1−xMgxO ternary alloy on Si substrate. Photodiode has shown obvious current rectifying behaviour with ideality factor of 2.6. Photodetector based on n-Zn1−xMgxO/p-Si heterojunction has shown fast photoswitching action with response time 100 ms. Detector has shown photoresponsivity of 12 µA/W, specific detectivity of 1.1 × 108 Jones and EQE of 4 × 10−3 for 390 nm light.

Transition-metal oxide thin films of V2O5, ZrO2, and CeO2 were fabricated on MgO single-crystal substrates using a pulsed-laser deposition technique. The linear optical transmission spectra were measured at room temperature, and the data showing a fringe pattern in the transparent spectral region were used to determine the linear refractive indices of the films. The values of the linear refractive indices decrease with increasing wavelength, and the relationship could be well explained using Wemple’s theory. The third-order nonlinear optical properties of the films were determined using a single-beam z-scan method at a wavelength of 532 nm. The results showed that the prepared V2O5 film exhibited a fast third-order nonlinear optical response, with the nonlinear absorption coefficient and the nonlinear refractive index being 3.97 × 10–10 m/W and 4.55 × 10–17 m2/W, respectively, which are larger than those for the ZrO2 and the CeO2 films. The metal–oxygen bond lengths based on the bond-orbital theory could be used to explain these results.

Two-dimensional materials provide opportunities for developing semiconductor applications at atomistic thickness to break the limits of silicon technology. Black phosphorus (BP), as a layered semiconductor with controllable bandgap and high carrier mobility, is one of the most promising candidates for transistor devices at atomistic thickness1–4. However, the lack of large-scale growth greatly hinders its development in devices. Here, we report the growth of ultrathin BP on the centimetre scale through pulsed laser deposition. The unique plasma-activated region induced by laser ablation provides highly desirable conditions for BP cluster formation and transportation5,6, facilitating growth. Furthermore, we fabricated large-scale field-effect transistor arrays on BP films, yielding appealing hole mobility of up to 213 and 617 cm2 V−1 s−1 at 295 and 250 K, respectively. Our results pave the way for further developing BP-based wafer-scale devices with potential applications in the information industry. Centimetre-scale growth of few-layer black phosphorous with high crystalline quality and homogeneity is realized by pulsed laser deposition.

Abstract Mixed transition-metals oxide electrocatalysts have shown huge potential for electrochemical water oxidation due to their earth abundance, low cost and excellent electrocatalytic activity. Here we present Co–Fe–B–O coatings as oxygen evolution catalyst synthesized by Pulsed Laser Deposition (PLD) which provided flexibility to investigate the effect of morphology and structural transformation on the catalytic activity. As an unusual behaviour, nanomorphology of 3D-urchin-like particles assembled with crystallized CoFe2O4 nanowires, acquiring high surface area, displayed inferior performance as compared to core–shell particles with partially crystalline shell containing boron. The best electrochemical activity towards water oxidation in alkaline medium with an overpotential of 315 mV at 10 mA/cm2 along with a Tafel slope of 31.5 mV/dec was recorded with core–shell particle morphology. Systematic comparison with control samples highlighted the role of all the elements, with Co being the active element, boron prevents the complete oxidation of Co to form Co3+ active species (CoOOH), while Fe assists in reducing Co3+ to Co2+ so that these species are regenerated in the successive cycles. Thorough observation of results also indicates that the activity of the active sites play a dominating role in determining the performance of the electrocatalyst over the number of adsorption sites. The synthesized Co–Fe–B–O coatings displayed good stability and recyclability thereby showcasing potential for industrial applications. Graphic Abstract

Ba0.85Ca0.15Zr0.1Ti0.9O3/La0.7Sr0.3MnO3 (BCZT/LSMO) bilayer multiferroic heterostructures with different BCZT layer thickness are fabricated by pulsed laser deposition technique. Structural characterization of XRD and TEM reveals the epitaxial growth of the bilayer heterostructures, whose residual strain reduces with increasing thickness. The room temperature multiferroic characteristics of the bilayer heterostructures are demonstrated by the simultaneously observed ferroelectric and ferromagnetic properties as well as the magnetoelectric effect. Due to the varying residual strain, the multiferroic properties of the bilayer heterostructures show strong dependence on the BCZT layer thickness, which significantly improves with increasing thickness. The largest magnetoelectric coefficient with αE31 value of 355.2 mV/cm·Oe is achieved in BCZT/LSMO bilayer heterostructures with BCZT layer thickness of 150 nm.

We comparatively fabricated thin films of La0.01Ba0.99TiO3(LBTO), Sm0.5Sr0.5CoO3(SCO) and Sm0.5Sr0.5CoO3/La0.01Ba0.99TiO3 (SCO/LBTO) thin films grown on quartz substrates using pulsed laser deposition technique. The structure of these samples was carried out using X-ray diffraction, and these samples had a polycrystalline structure. The surface topography for these films was studied using scanning electron microscopy (FE-SEM) and shows grains with nano-sized and uniform nature of the thin films. The optical properties such as transmittance, absorbance and reflectance of these thin films were studied. The optical results such as absorption coefficient, optical energy gap and refractive index were determined. The oscillation energy and dispersion energy, on the other hand the dielectric results such as dielectric loss and dielectric tangent loss, were determined, while nonlinear optical results such as the third-order nonlinear optical susceptibility χ(3) were calculated for all these samples. Finally, the electronic results such as the density of state for both the valence and conduction band were determined.

Heterostructure bilayer thin films of Pr0.6Sr0.4MnO3/Pr0.5Ca0.5MnO3 were prepared by pulsed laser deposition, and the structural, magnetic and magnetotransport properties were studied, and the results were compared to that of Pr0.6Sr0.4MnO3 and Pr0.5Ca0.5MnO3 single-layer thin films. Structural analysis of the heterostructure reveals c-axis orientation for both the manganite layers. The heterostructure exhibits a higher metal-insulator transition temperature and a larger colossal magnetoresistance near room temperature than that of the single-layer counterparts. The electrical conduction above the metal-insulator transition could be explained within the realm of the adiabatic small polaron hopping mechanism, with lesser activation energies compared to the single-layer films. Magnetization measurements portray the presence of an unsaturated symmetric hysteresis loop for the heterostructure with the Curie temperature of ~270 K corresponding to the ferromagnetic ordering emanating from Pr0.6Sr0.4MnO3. These results could be qualitatively understood considering the combined effect of strain and ferromagnetic proximity of Pr0.6Sr0.4MnO3 with charge-ordered Pr0.5Ca0.5MnO3 manganite.

The paper presents the preparation of nanostructured ZnO and TiO2 binary thin films by pulsed laser deposition at different temperatures ranging from 298 K (as deposited) to 923 K. The films have been characterized by SEM, EDAX, XRD, and UV. The presence of nanospheres is detected by SEM. The XRD spectra extrapolates the film's amorphous existence below 773 K. Thin film deposited at 923 K confirmed ZnTiO3 formation. The optical energy band gap measured by the Tauc plot was found to be 3.7–3.9 eV. The electrochemical impedance spectroscopy with a sweeping frequency of 1 Hz to 1 MHz was used to examine the films for temperatures between 298 K and 473 K. The EIS results revealed that these films have not denied an impedance and modulus relaxation. Activation energy dependent on impedance and module relaxation was calculated from the Arrhenius plot. The mean capacitance was obtained and statistically tested using the SPSS statistics software tool.

ZnO:Eu thin film fabricated by pulsed laser deposition was treated by pulsed UV laser. The effect of laser fluence from 70 to 125 mJ cm−2 on film properties was investigated. The results showed that the surface morphology was clearly modified and the film treated at laser fluence of 70 mJ cm−2 was more densified compared to the other annealed films. Laser treatment led to a reduction of carbon content and to a stoichiometric ZnO:Eu composition on the surface. Refractive index significantly decreased and extinction coefficient was blue shifted for higher laser fluences. Strong characteristic Eu3+ transitions were obtained using excitation at 266 nm. The highest photoluminescence intensity was observed for the annealed film at a laser fluence of 70 mJ cm−2. The influence of ambient composition (N2 and O2) and temperature (room temperature and 150 °C) to photoluminescence response was examined for optical gas sensor application. The laser-untreated film showed higher sensitivity to the presence of oxygen at both temperatures compared to the treated film. The stability of photoluminescence intensity at elevated temperature was improved for laser-treated areas.

The present study reported pure pre-synthesized Al1.997Hf0.003O3 target for the formation of novel high-k gate dielectric thin films using pulsed laser deposition technique. High substrate temperature of 800 °C and ultra-high-vacuum condition at 10−8 Torr were used to produce stable hexagonal crystal structure of thin films with exclusive crystal growth directions in the (110) and (024) planes as evidenced by the XRD. AFM images displayed dense and uniform distribution of crystallites with RMS as low as 0.12 nm, contributing to very smooth morphology. Optical observation by the UV–Vis analysis showed that the introduction of Hf in the lattice of the Al2O3 material had significantly modified the energy bands of Al1.997Hf0.003O3, hence, improved k values. Consequently, the C–V measurements of the fabricated thin films based on Pt/Al1.997Hf0.003O3/p-Si MOS capacitor exhibited a high capacitance of ~ 202 nF at ~ 6 nm thickness and attributed to high-k value of ~ 21. The I–V measurements also revealed the electron tunnelling was reduced with thicker films of Al1.997Hf0.003O3, due to this, leakage current density was improved to ~ 10−10 A/cm2. These results revealed that Al2−xHfxO3 thin films could be significant in searching for a replacement dielectric for nanoscale MOS devices.

One-dimensional (1D) metal halide perovskite nanowire (NW) arrays with high absorption efficiency, emission yield and dielectric constants, as well as anisotropic optoelectronic properties have found applications in energy harvesting, flexible electronics, and biomedical imaging devices. Here, a modified two-step solvothermal method is developed for the synthesis of self-assembled cubic CsPbBr3 NW arrays. This method provides facile access to continuous and uniform ultrafine perovskite NWs and well-aligned pure perovskite NW arrayed architectures. Under excitation at 365 nm, the CsPbBr3 NWs give a strong blue emission observable to the naked eyes. The CsPbBr3 NWs also exhibit strong two-photon excited luminescence under the irradiation with an 800 nm pulse laser. By rotating the polarization angle of the 800 nm laser, strong polarization dependence with a polarization degree up to ∼0.49 is demonstrated in the self-assembled CsPbBr3 NW array, although the CsPbBr3 NWs have an isotropic cubic structure. Based on density functional theory (DFT) calculations, this polarization-dependent emission is correlated with the anisotropic charge density distribution of the perovskite NWs. These findings suggest that the ultrafine CsPbBr3 NWs with a well-defined self-assembled architecture could be applied as next-generation polarization-sensitive photoelectronic detection materials.

This work investigates the ferroelectric behavior of barium titanate (BaTiO3) with and without annealing of the deposited film. 105.7 nm of BaTiO3 was deposited via pulsed laser deposition on a niobium-doped strontium titanate substrate. 50 nm of tungsten was sputtered and patterned into contact pads, and the film was subjected to electrical and material characterization. Annealing times greater than 30 min decreased the leakage current by 2–3 orders of magnitude. We demonstrate multiple, distinct, repeatable polarization states of BaTiO3 as a function of the film annealing time, and the forming and hysteresis sweep pulse lengths and amplitudes.

In this study, we have prepared Bi2Sr2CaCu2Ox (BSCCO) nanostructure films by pulsed laser deposition technique (PLD). The structural and optical properties of nanostructured Bi2Sr2CaCu2Ox film were investigated. X-ray diffraction (XRD) studies of the films prepared at 6.5 and 8 J/cm2 showed that the films are crystalline in nature with orthorhombic phase. Scanning electron microscopy (SEM) investigation confirmed that the deposited film has spherical grains and the mean grain size of the film increased from 150 nm to 250 nm as laser energy density increased from 6.5 to 8 J/cm2. The optical energy gap of the film decreased from 2.24 to 1.7eV when the energy density increased. The optoelectronic properties of the Bi2Sr2CaCu2Ox/Si heterojunction photodetector have been investigated. The photodetectors exhibited rectification properties and the ideality factor of the photodetectors deposited 6.5 and 8 J/cm2 were 2.3 and 4.2, respectively. The on/off ratio of the photodetectors was found to be 761 and 385 for the photodetectors prepared with6.5 and 8 J/cm2, respectively. A responsivity of 514 mA/W at 860 nm was found for the photodetector prepared with 6.5 J/cm2 without using post annealing and/or buffer layer.

An epitaxial SmNiO3 thin-film grown on an LaAlO3 (001) substrate using pulsed laser deposition is investigated with spherical-aberration corrected scanning transmission electron microscopy techniques, including high-angle annular dark field, X-ray energy dispersive, and electron energy-loss spectroscopy. High-density Ruddlesden–Popper (RP)-type faults, which generate two types of image contrast due to overlaps along the electron beam direction, are identified with the translational vector of 1/2a⟨111⟩c, corresponding to 1/2a⟨101⟩c displacement of Sm atoms when observed along the [010]c zone axis. These defects originate from Sm-rich non-stoichiometry within the SmNiO3, and their directions depend on the local stress states. Lattice distortion induced by the RP faults reduces the metal-to-insulator transition temperature to around 340 K. The effects of high-density RP faults on the lattice strain, domain size, and strong electronic-lattice correlations indicate that RP faults can provide extra freedom to tailor the physical properties of SmNiO3 thin films for potential electronic device applications. High-density Ruddlesden–Popper-type faults are revealed in an epitaxial SmNiO3 thin film grown on LaAlO3 (001) by pulsed laser deposition, originating from Sm-rich non-stoichiometry, and their directions depend on the local stress states. Lattice distortion induced by the RP faults reduces the metal-to-insulator transition temperature to around 340 K. RP faults provide extra freedom to tailor intriguing properties of SmNiO3 for potential electronic device applications.

Pulsed laser deposition (PLD) experiments were employed to deposit a thin adherent coating of HfO2 nanoparticles on electrochemically synthesized Cu2O nanowires. The as-deposited layer of HfO2 on Cu2O nanowires forms a hierarchical assembly of HfO2–Cu2O. The PLD process parameters were optimized to obtain the desired hierarchical morphology and a plausible growth mechanism has been exemplified based on observed SEM results and pertinent literature survey. In addition, field emission (FE) characteristics of the HfO2–Cu2O hierarchical assembly and pristine Cu2O nanowires were carried out at base pressure of 1 × 10–8 mbar. The HfO2–Cu2O nanowires hierarchical emitter exhibits superior FE behavior in terms of lowering in turn-on and threshold fields, delivery of two-fold higher emission current density at relatively lower applied field, as compared to the pristine Cu2O nanowire emitter. HfO2, despite being a wide band gap semiconductor (WBGS) possessing high dielectric constant, the enhanced FE behaviour is mainly attributed to the morphological aspect of hierarchical structure offering high aspect ratio. Furthermore, similar to other WBGS emitters like diamond, in this case too, low electron affinity is speculated to facilitate field emission. The observed results highlight the potential of PLD in fabricating hierarchical structures of WBGs onto other semiconducting oxide nanostructure for novel applications.

Pulse laser ablation is the most effective technique as it can be carried out within a spotless and well-regulated setting which eventually produces ultrapure nanoparticles. Several factors affect the formation of nanoparticles regarding size when the laser ablation technique is utilized. Primary factors include both physical parameters (fluency of laser, pulse durations, time of irradiation, wavelength and rate of repetition) as well as chemical parameters (fluid type and solid target size). When the energy density was elevated to the optimum rate, it led to growth in nanoparticle production. Additionally, the findings revealed that variation of solid target needed diverse optimum pulse durations and irradiation time to produce small and narrowly sized distributions of nanoparticles. The most frequent pulse duration was a few nanoseconds. Moreover, the study revealed that the nanoparticle size of colloids is controllable through shifting the wavelength from the fundamental harmonic up to the 4th harmonic (1064 to 266 nm). The wavelength of 532 nm is most widely utilized in preparing nanoparticles with optimal size and shape. The pulse repetition rate was proved to altering the average size of target nanoparticles. Meanwhile, the most frequently used pulse repetition rate was 10 Hz. Finally, it is important to simultaneously realize the optimum working conditions and optimum values of the whole parameters in order to succeed in ablating material in the form of particulates, atoms, and ions as well as to achieve the optimum synthesis of nanoparticles.

Perovskite materials have received extensive attention as optical gain media. However, it is tough to realize lasing using such materials on account of the unstable structure of MAPbI3/CsPbI3 nanocrystals (NCs), and the propensity for mixed-halogen perovskites to undergo phase decomposition into bromine-rich and iodide-rich regions under intense laser irradiation. To solve this issue, we fabricated CsPbX3 (X = Br, I) NCs, which were embedded into a glassy matrix with high stability. In addition, by doping Br− ions into the CsPbI3 NCs to partially replace I− ions, the optical efficiency and the optical gain properties were found to be significantly improved. Here, under 800 nm pulse laser excitation, red random lasing was realized with the assistance of such anion modulation. Moreover, we demonstrate that the perovskite NCs glasses (PNG) show strong water stability after immersion in water for one week, seeding a promise for application in high-definition (HD) displays and photonic devices.

Heterojunctions made of n-type cadmium sulfide (CdS) and p-type zinc telluride (ZnTe) thin films with rectifying behavior have been developed using an in situ approach based on pulsed laser deposition (PLD). The structure of the CdS and ZnTe thin films was observed by x-ray diffraction (XRD) analysis. Optical and electrical characterization of the semiconductor films and fabricated diodes is also reported herein. For this purpose, a set of CdS/ZnTe diodes was fabricated with circular gold contacts of varying diameters from 100 µm to 300 µm. The carrier concentrations of the semiconductor layers were determined using a Hall-effect measurement system, yielding values of 5.26 × 1018 cm−3 and 3.5 × 1013 cm−3 for CdS and ZnTe, respectively. Current–voltage (I–V) characteristic curves were used to observe the typical rectifier behavior over three orders of magnification. In addition, other parameters were obtained from the I–V curves, such as the density current, saturation current, series resistance, threshold voltage, and ideality factor. Also, capacitance–voltage (C–V) characteristic curves allowed the determination of the following parameters: depletion width, built-in voltage, and donor concentration. According to the results, such n-type CdS/p-type ZnTe heterojunctions with rectifying behavior could find potential applications in the development of photodetectors by modifying the difference in carrier concentration between the two materials.

To investigate the parameters and irradiation techniques used for 10,600 nm carbon dioxide laser for dental caries prevention. This study examined the 22 publications on the effects of carbon dioxide lasers on preventing caries. The parameters investigated were output power, pulse energy, frequency (for pulse laser), spot area and fluence. The techniques investigated were the mode (fixed spot or scanning motion), time and irradiation distance. Seventeen studies examined the prevention of enamel caries. The output power, pulse energy, frequency, spot area and fluence were determined, and their ranges were 0.1 to 2800 W, 0.0025 to 2000 mJ, 8.7 × 10−8 to 0.05 cm2, 1 to 226 Hz and 0.3 to 28.6 Jcm−2, respectively. Ten studies employed scanning motion and seven employed fixed spot irradiation. The time and irradiation distance ranged from 2 to 9 s and 1 to 370 mm, respectively. Six studies examined dentin caries prevention. The output power, pulse energy, frequency, spot area and fluence ranged from 0.17 to 480 W, 1.7 to 540 mJ, 0.008 to 0.05 cm2, 1 to 250 Hz and 0.05 to 715 Jcm−2, respectively. Three studies employed spot irradiation and three employed scanning motion. The time and irradiation distance range from 4 to 15 s and 5 to 198 mm, respectively. Parameters of three studies were incorrect and two studies could not be determined. This review found considerable variations in the included articles’ parameters and irradiation techniques reported for 10,600 nm carbon dioxide laser for caries prevention. Some studies did not provide adequate information on the parameters and the irradiation technique. A few studies reported incorrect parameters or impractical irradiation distance for clinical practice.

High-quality β-Ga2O3 films were grown on (0001) sapphire substrates at various substrate temperature by pulsed laser deposition (PLD) in a high vacuum chamber. Low pressure (1.6 mPa) and high reactivity oxygen plasma was introduced as reaction gas. The films were used to fabricate metal–semiconductor–metal (MSM) solar-blind photodetectors by electron-beam evaporation. The β-Ga2O3 -based photodetector exhibited high performance with a low dark current (about 40 pA), fast response speed (τrise: 0.17 s, τdecay: 0.03 s) and high responsivity (0.35 A/W). These results represent the high quality of β-Ga2O3 films and excellent performance for PLD-grown β-Ga2O3 -based MSM solar-blind photodetectors.

Oxygen-deficient Ce2O3 growth requires reduction of CeO2 with hydrogen gas and high temperatures. In this study, a 2-year desiccated target with different oxygen-deficient phases was used as a pellet in order to deposit cerium oxide thin films on LaAlO3 substrates from 100 to 800 °C by pulsed laser deposition. Desiccated target utilization resulted in pure Ce2O3 and CeO2–Ce2O3 mixture thin films verified by X-ray diffraction. Morphology of the thin films was investigated by scanning electron microscope, and seen that Ce2O3 films have grid-like surface formation. A fresh target is prepared and used in order to compare the crystal structure of the desiccated target. Experiments repeated with a fresh target and X-ray photoelectron spectroscopy of cerium oxide films indicated that Ce2O3 growth depends on target stoichiometry. Further desiccation of the target resulted in single-crystal Ce2O3 growth in all temperatures between 100 and 800 °C, attributed to stoichiometric transfer of the target composition.

Pulsed laser deposition (PLD) is a simple and extremely versatile technique to grow thin films and nanomaterials of a wide variety of materials. PLD allows the deposition of profoundly different materials, including high-temperature superconductors, oxides, nitrides, carbides, semiconductors, metals, and even polymers or fullerenes with high deposition rates. Growing thin films using PLD is now being used around the world for prototyping thin films of many inorganic materials and even in device fabrication protocols. This article covers the detailed development, versatility, and reliability of the ultraviolet (UV) excimer laser. It is envisioned that this review article is of interest for both the materials and chemical scientists engaged in more fundamental aspects of pulsed laser ablation and deposition. The present article highlights the historical developments of PLD technique, complete mechanism of thin film fabrication, optimization of the quality of thin films and the fabrication of thin films of the materials like ZnO, Graphene, MoS2, and WS2 which are being explored for various potential applications.

Lead-free (K0.5Na0.5NbO3)0.97–(Bi1.07FeO3)0.03 (KNN–BFO) ferroelectric thin films were epitaxially grown on LaNiO3-buffered SrTiO3(STO) by the pulsed laser deposition. The influence of the BiFeO3 addition on the electrical, bandgap, and photoelectric properties in KNN thin films was investigated systematically. Interestingly, compared with KNN films, the KNN–BFO thin films exhibit a significant enhancement on the ferroelectric and photoelectric properties. The enhanced ferroelectric properties were due to the depression of the leakage current and the improvement of the ferroelectric domains. Moreover, the photoelectric effect in the visible region can be ascribed to the improved ferroelectric properties and the narrow bandgap of KNN film modified by BiFeO3 addition. Our results indicate that the lead-free KNN–BFO thin films with enhanced ferroelectric and photoelectric characterizers may own a potential for environmental-friendly informational storage and photoelectric devices.

Y3Sc2Ga3O12 (YSGG) single crystal has multifunctional applications in the areas of substrate, scintillator, and laser matrix owing to its unique features of structure, thermal, and optical properties. However, the some basic physical and optical properties of YSGG crystal remain unexplored. In this work, the Vickers hardness, Raman spectrum, thermal properties, as well as laser damage threshold of YSGG single crystal were determined for the first time, to the best of our knowledge. The thermal conductivity of YSGG crystal was decreases with the increase of temperature from 298 to 773 K, and the room-temperature thermal conductivity was determined to be 5.76 W m− 1 K− 1. With 355 nm pulse laser illumination, the laser damage threshold of YSGG crystal was determined to be 5.18 J cm−2. Besides, based on the measured Raman spectrum of YSGG crystal, ten Raman vibrations were assigned. The results provide some valuable insight into YSGG crystal, which are important for the further investigation and application of this crystal.

The paper aims at the synthesis and characterization of a wollastonite ceramic layer (belonging to the CaO-SiO2 system) deposited by PLD (pulsed laser deposition) method on a titanium metal substrate, in order to improve titanium biocompatibility and bioactivity. The silicate precursor mixture was synthesized by the sol–gel method. From this precursor was obtained the ceramic target by sintering at 1150 °C for 6 h. The obtained films on the titanium metal substrate were characterized by x-ray diffraction, scanning microscopy and by determination of the contact angle. Also, the materials were tested in vitro to determine the bioactivity and biocompatibility of thin films. The obtained results indicate the presence of wollastonite in films composition and a good bioactivity in the presence of cells, which suggests that this type of thin films is suitable for medical implants.

Cerium oxide (CeO2) thin films as humidity sensors are obtained by pulsed laser deposition (PLD) grown on Si (100) substrate. CeO2 nanoparticles were taken as target materials for PLD technique. The effect of film deposition condition, such as deposition temperature on performance sensor, was explored. The substrate temperature ranges varied from 300 to 700 °C. The structural and surface morphologies were examined by X-ray diffractometer (XRD) and scanning electronic microscopy (SEM), respectively. The capacitance and resistance of the sensors were tested. The sensor utilizing CeO2 films exhibited high sensitivity, and the increase in humidity led to a gradual increase in sensitivity and decreased resistance. The sensor performance is highly dependent on morphology and surface, which in turn is affected by the change in electrical properties of the film.

High-quality c-axis-oriented Cr-doped ZnO thin films were grown on 100-μm-thick Si (100) wafer substrate by Pulsed Laser Deposition (PLD) technique. The PLD is a versatile technique for growing thin films and a wide range of materials. The structural analyses confirm the wurtzite structure of synthesized samples and are preferentially oriented along c-axis perpendicular to substrate the surface. The intensity of defect-induced mode frequency for Cr-doped ZnO film increased due to the formation of highly crystalline films. In Raman spectra, E2 (high) mode shows redshift owing to optical phonon confinement induced by uncertainty in photon wave vectors i.e., downshift of Raman peaks. Cr-doped ZnO thin film consists of nanorod-shaped grains of different sizes. Each rod possesses width in a range of 85–93 nm and length upto several hundred nanometres. The decrease in peak intensity of Cr-doped ZnO film photoluminescence (PL) spectrum is attributed to a fall in the electron–hole recombination process. In visible region of PL spectra, green light emission peak at about 567 nm was associated with defects in ZnO. It is observed after doping root mean square (RMS) roughness increases with which means the surfaces becomes rough and grain size increases.

The pulsed laser deposition (PLD) technique can be efficient and cost-effective in the fabrication of high-quality MoS2 thin films. The laser pulse parameters, such as the number of pulses, the pulse energy density, and the frequency, that influence the MoS2 thin films quality have been investigated. The optimum parameters of laser pulse for the best crystalline quality MoS2 films were determined by experiments. Back-gated field effect transistors (FETs) were fabricated based on the MoS2 thin film. The carrier mobility of the MoS2 back-gated FETs has reached 4.63 cm2 V−1 S−1. The responsivity of the MoS2 back-gated FETs is approximately 0.06 AW−1 at drain voltage of − 2 V. These results show that the back-gated FETs based on MoS2 thin films prepared by PLD can be applied to photodetectors.

To improve the interfacial conductivity and corrosion resistance of AISI430 stainless steel (430SS) as bipolar plates for direct formic acid fuel cells (DFAFCs), a Nb0.8Zr0.2 layer has been successfully synthesized via the pulsed laser deposition (PLD) technique on the surface of 430SS. This Nb0.8Zr0.2 layer is smooth, uniform, and comparatively compact without any surface flaw and micropore. Investigation under the simulated anodic environment of DFAFCs (0.05 M H2SO4 + 2 ppm HF + 10 M HCOOH at 70 °C) shows that the corrosion resistance of 430SS is obviously ameliorated after the PLD modification. In addition, the interfacial contact resistance of Nb0.8Zr0.2-430SS (6.0 mΩ cm2) is much smaller than that of bare 430SS (151.3 mΩ cm2) at the clamping force of 140 N cm−2. Besides, different from the highly increased interfacial contact resistance of bare 430SS, the Nb0.8Zr0.2-430SS shows a minor increase resistance after potentiostatic tests in simulated anodic environment of DFAFCs.

The tin oxide (SnO2) thin films have been prepared by the pulsed laser deposition (PLD) at deposition temperatures (Td) ranging from 300 to 500 °C with different morphologies and studied as anode for sodium-ion battery. The microstructural evolutions of the thin films are investigated by various techniques which reveal a pure SnO2 phase. The crystallinity of the thin film deposited at 300 °C shows partial amorphous characteristics. Among all the samples, SnO2 thin film deposited at 300 °C exhibits superior electrochemical performance. The films at 300 °C display a high specific capacity of 488 mAh g−1 (at 20 mA g−1) after 50 cycles and a coulombic efficiency of 96% after 200 cycles at 130 mA g−1 (voltage window of 0.01 V to 2.0 V). The achieved high specific capacity can be credited to sodium (Na) storage mechanisms of SnO2, which are both (1) conversion of SnO2 to Sn nanocrystals and followed by (2) alloying of Na and Sn.

Bi0.5La0.5FeO3 and its solid solution with 50% Ba0.7Sr0.3TiO3 doping [(Bi0.5La0.5FeO3)0.5-(Ba0.7Sr0.3TiO3)0.5] were deposited on MgO and Si substrates by employing pulse laser deposition; these samples were investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), electron dispersive study, infrared (IR) spectroscopy and magnetization measurement. XRD data confirms the formation of the sample in the thin film form. The average grain size was calculated from the XRD data, and the estimation of the microstrain was made by employing Williamson–Hall (W-H) formulation. The estimation of the grain size was confirmed by the FESEM images. The modifications in the IR absorption spectra and the room temperature magnetization due to differing substrates are correlated with the microstrain in thin film. The modification in the physical property offers the opportunity of optimizing the properties by selecting the substrate for potential technological application.

Rare-earth orthoferrite SmFeO3 is an outstanding single-phase multiferroic material, holding great potential in novel low-power electronic devices. Nevertheless, simultaneous magnetic and ferroelectric orders as well as magnetoelectric (ME) coupling effect at room temperature (RT) in this system have not been demonstrated yet. In this study, epitaxial SmFeO3 films were successfully prepared onto tensile-strain Nb-SrTiO3 (Nb-STO) substrates by a pulsed laser deposition (PLD) method. Measurement results show that the films exhibit obvious ferromagnetic and ferroelectric orders at RT. Meanwhile, the magnetic anisotropy gradually changes from out-of-plane (OP) to in-plane (IP) direction with increasing film thickness, which is attributed to the variations of O 2p-Fe 3d hybridization intensity and Fe 3d-orbit occupancy caused by the strain-relaxed effect. Moreover, electrically driven reversible magnetic switching further proves that the SmFeO3 films exhibit the RT ME coupling effect, suggesting promising applications in new-generation electric-write magnetic-read data storage devices.

The study report on Vanadium dioxide thin films of about 100nm thickness deposited using pulsed laser deposition on Si (100). The novel phase change reported is attributed to the post-treatment of the films via ion implantation with 25 KeV C+ ion beam at varying particle fluence (1E15, 1E16, and 1E17 /cm2). At the initial fluence, the preferred phase is retained while amorphization and recrystallization of the film is observed as the fluence increase to 1E16 ions/cm2and 1E17 ions/cm2, respectively. The phase transition of the samples is observed to occur at a temperature below 320 K while stabilization of the low phase structure is observed for the middle fluence. Further increase restores the SMT behaviour/trend that occurred at elevated temperatures.

Functionalized implants demonstrate an upgraded approach in orthopedic implants, aiming to achieve long term success through improved bio integration. Bioceramic coatings with multifunctionality have arisen as an effective substitute for conventional coatings, owing to their combination of various properties that are essential for bio-implants, such as osteointegration and antibacterial character. In the present study, thin hopeite coatings were produced by Pulsed laser deposition (PLD) and radio frequency magnetron sputtering (RFMS) on Ti64 substrates. The obtained hopeite coatings were annealed at 500 °C in ambient air and studied in terms of surface morphology, phase composition, surface roughness, adhesion strength, antibacterial efficacy, apatite forming ability, and surface wettability by scanning electron microscope (SEM), X-ray diffraction (XRD), atomic force microscope (AFM), tensometer, fluorescence-activated cell sorting (FACS), simulated body fluid (SBF) immersion test and contact angle goniometer, respectively. Furthermore, based on promising results obtained in the present work it can be summarized that the new generation multifunctional hopeite coating synthesized by two alternative new process routes of PLD and RFMS on Ti64 substrates, provides effective alternatives to conventional coatings, largely attributed to strong osteointegration and antibacterial character of deposited hopeite coating ensuring the overall stability of metallic orthopedic implants.