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Silicon solar cells with cover glass irradiated by 1 MeV electron beams at various fluences were investigated using photocarrier radiometry (PCR) combined with lock-in carrierography (LIC, spectrally gated dynamic photoluminescence). The minority carrier transport properties (i.e., minority carrier lifetime τ, diffusion coefficient D, surface recombination velocities S) and the degradation of these properties were studied using PCR. The relative damage coefficient obtained by LIC was consistent with the PCR measurement. The local series resistance of the solar cell before and after irradiation was characterized by LIC. The results showed that the series resistance increased with electron fluences.

The distribution of minority carrier transport parameters (i.e., minority carrier lifetime, diffusion coefficient, and two surfaces recombination velocities) of multicrystalline silicon (mc-Si) solar cell was investigated using laser-induced photocarrier radiometry (PCR). Images of the amplitude and phase of the PCR measurements clearly showed the crystal boundaries of the mc-Si solar cell. The distribution of minority carrier transport parameters was obtained by best fitting the experimental results to the theoretical two-layer carrier density wave model of solar cells. The best-fitting results demonstrated that there was great difference in the minority carrier transport parameters among various grains.