1. Electrostatic gating of hybrid halide perovskite field-effect transistors: balanced ambipolar transport at room-temperature
- Author
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Yaochuan Mei, Chuang Zhang, Oana D. Jurchescu, and Zeev Valy Vardeny
- Subjects
Fabrication ,Materials science ,Ambipolar diffusion ,business.industry ,Transistor ,Photovoltaic system ,Halide ,Electron ,law.invention ,law ,Optoelectronics ,General Materials Science ,Field-effect transistor ,business ,Perovskite (structure) - Abstract
The hybrid halide perovskites combine the low-cost processing characteristics of organic materials with the performance factors of inorganic compounds. Recently the power conversion efficiencies of perovskite photovoltaic solar cells have reached a respective value of ∼20%. The charge transport properties were indirectly approximated in these compounds because of lack of available field-effect transistors (FETs). Here we report the fabrication and room-temperature operation of FETs based on the hybrid perovskites. We obtained balanced electron and hole transport with mobilities of ∼1 cm2/Vs. We also found that the yield, as well as the operational and environmental stability of the fabricated transistors is limited.
- Published
- 2015
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