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WN thin films were synthesised on silicon (100) substrate by varying the nitrogen flow rate (NFR) at a substrate temperature of 300°C for the initial 15 min using RF magnetron sputtering. With the increase in NFR from 1.58, 5.29 and 10 sccm (standard cubic centimetres per minute), the FCC β-W2N phase was converted to mixed phases of FCC β-W2N and hexagonal δ-WN, and further to amorphous phases. Likewise, XPS results indicated the presence of W-N phases. In addition, structural and morphological studies confirmed the presence of dense films at 1.58 sccm of NFR with a thickness of 430 nm and a surface roughness of 0.99 ± 0.16 nm. Moreover, the film with β-W2N phase (at 1.58 sccm of N2 flow) exhibited high hardness and elastic modulus values of 28.36 ± 2.57 GPa and 149.72 ± 8.04 GPa, and better scratch resistance with average coefficient of friction (COF) value of 0.303, making it best suitable for hard coating applications. [ABSTRACT FROM AUTHOR]

Highly transparent thin films of aluminium doped ZnO along with specific silver co-doping are deposited by sol-gel spin coating, which show preferred single orientation along (100) plane. Presence of Al dopant reduces, whereas co-doping with Ag improves crystallinity. Films show sharp absorption in near UV region and band gap observes minor shifts. UV and blue emission peaks are seen in the photoluminescence spectra. UV and blue emission peaks, respectively, demonstrate a fairly large i.e. 43% and 77% rise in the normalised intensity. Presence of Ag causes rise in UV peak because of enhanced excitonic recombination probability. Rise of blue emission intensity is ascribed to creation of Ag-Al interstitials. Surface roughness increases to 210.0 nm with Al increment into ZnO and drops drastically to 81.1 nm by Ag co-doping. Boundaries of nanostructures club together with rise in Al amount and thereafter Ag co-doping is seen to reduce the particle size. [ABSTRACT FROM AUTHOR]

Nanocrystalline Cd1−XZnXS thin films (X = 0.2, 0.4, 0.6, 0.8) have been grown on glass substrate by spray pyrolysis technique using equimolar concentration aqueous solution of cadmium chloride, zinc acetate and thiourea. Prepared thin films have been characterised by UV–vis spectrophotometer, X-ray diffractometer, SEM/EDAX analysis and two-point probe set-up. The optical band gap of the films has been studied by transmission spectra in wavelength range 325–600 nm. It has been observed that optical band gap increases with increasing zinc concentration. The X-ray diffraction pattern of films indicated that the films are polycrystalline with hexagonal grain structure. The lattice parameters of prepared Cd1−XZnXS films decrease with increase in zinc content. SEM/ EDAX analysis consolidates the formation of ternary compound. The DC electrical conductivity and activation energy of the films has been measured in vacuum by a two-point probe set-up. It has been observed that the electrical conductivity decreases with increasing Zn concentration in films. [ABSTRACT FROM AUTHOR]

The effect of deposition parameters, i.e. type of substrate (microscope glass, quartz and mica) and thickness (500 nm, 800 nm and 1100 nm), on the optical properties of Ge10Se90-xTex (x = 0, 10, 20, 30, 40, 50) thin films was investigated. Thin films were deposited by the vacuum evaporation technique at a base pressure 10-4 Pa. Optical transmission measurements were used to determine the refractive index (n) and optical energy gap [image omitted]. Transmission spectra were obtained in the spectral range 400-1500 nm. With an increase of film thickness, the optical energy gap was found to increase, whereas no significant change was observed for the refractive index within experimental error. For different substrates used in deposition of the thin films, the refractive index follows the order nmica > nmicroscope glass > nquartz. The optical energy gap of films deposited on mica substrate is the smallest, whereas for microscope glass and quartz substrates it remains nearly the same. [ABSTRACT FROM AUTHOR]