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A general HSPICE macromodel for the CuxO based resistive random access memory(ReRAM) cell is presented in this paper. It can simulate both the dc and transient behavior of ReRAM cells. The simulation results were compared with the experimental results and exhibited desirable accordance. [ABSTRACT FROM AUTHOR]

This paper presents a novel self-adaptive wordline voltage generator for phase change memories. It is based on a feedback loop which modulates the output resistance of the select MOS transistors to compensate the voltage drop across the bitline distributive resistance. Simulation results show that very effective compensation is achieved, with the reset current kept constant at the desired value for memory cells located at different rows. [ABSTRACT FROM AUTHOR]

Bismuth-layered ferroelectric thin films of Sr 0.8 A 0.1 Bi 2.1 Ta 1.5 Nb 0.5 O 9 (A = La, Pr) were fabricated by using the metalorganic decomposition (MOD) method. Structural characterization of the films by x-ray diffraction revealed that the films are polycrystalline in nature. Raman spectroscopy gave the evidence that the heavier La 3+ /Pr 3+ is entering into the lattice replacing the lighter Sr 2+ in A-site. The ferroelectric measurement revealed that the remanent polarization (2Pr) value of the SPBTN film was 22 μ C/cm 2 , which was slightly lower than that of SLBTN (24 μ C/cm 2 ). The coercive field (2Ec) value of SPBTN film was 102 kV/cm, which was a bit lower than that of SLBTN (112 kV/cm). All the films exhibited minimal (≤8%) degradation of polarization for up to 10 9 switching cycles. Our results reveal that Pr and Nb co-modification has almost the same effect in improving the ferroelectric properties of SBT as La and Nb co-modification. [ABSTRACT FROM AUTHOR]

Sr 0.8 La 0.1 Bi 2.1 Ta 2 O 9 thin films with different concentration of Nb at the Ta-site were grown on Pt/Ti/SiO 2 /Si substrates using metalorganic decomposition method. The composition dependence of the electric properties of them was investigated. It is found that the remanent polarization increases when the Nb concentration peaks around 0.3. However, the coercive field doesn't increase monotonously but peaks around 0.2 and 0.3. At the applied electric field of 300 kV/cm, the remanent polarization (2Pr) values of Sr 0.8 La 0.1 Bi 2.1 (Ta 0.8 Nb 0.2 ) 2 O 9 , and Sr 0.8 La 0.1 Bi 2.1 (Ta 0.75 Nb 0.25 ) 2 O 9 as well as Sr 0.8 La 0.1 Bi 2.1 (Ta 0.7 Nb 0.3 ) 2 O 9 film were 25 μ C/cm 2 , 24 μ C/cm 2 and 35 μ C/cm 2 , respectively. The coercive field (2Ec) value were 204 kV/cm, 112 kV/cm and 197 kV/cm for Sr 0.8 La 0.1 Bi 2.1 (Ta 0.8 Nb 0.2 ) 2 O 9 , Sr 0.8 La 0.1 Bi 2.1 (Ta 0.75 Nb 0.25 ) 2 O 9 and Sr 0.8 La 0.1 Bi 2.1 (Ta 0.7 Nb 0.3 ) 2 O 9 , respectively. [ABSTRACT FROM AUTHOR]

Ferroelectric xBiFeO 3 -(1-x) Sr 0.8 Bi 2.2 Ta 2 O 9 [xBFO-(1-x)SBT] solid solution with x ranging from 0 to 0.4 was synthesized on Pt/Ti/SiO 2 /Si by metalorganic decomposition method. This solid solution system has been found to have a layered perovskite structure and good ferroelectric properties. The remnant polarizations (2Pr) are 9.1 μ C/cm 2 and 7.9 μ C/cm 2 , while coercive field (2Ec) are 196 kV/cm and 209 kV/cm, respectively for 0.2BFO-0.8SBT and 0.4BFO-0.6SBT at an applied field of 300 kv/cm. It is found that increase of BFO concentration decreases the remnant polarization and the dielectric constant, increases the coercive field and the leakage current at certain applied voltage. The highest loss of tangent is observed for 0.8SBT-0.2BFO. It is found that the fatigue properties are decreased when more BFO was added to SBT films. The results were discussed with respect to the effects of Bi 3+ and Fe 3+ in BFO substitution at layered perovskite A and B site of SBT. [ABSTRACT FROM AUTHOR]

A new analytical model of MFIS threshold voltage is obtained, based on physics and mathematical analysis. The corresponding C-V I-V curves are presented further, by considering the relation between the voltage dropped on ferroelectric film and channel position. It is indicated from the threshold voltage model that the lower dielectric constant of ferroelectrics film and the better rectangle of hysteresis loop, the more difference of threshold voltage. Analysis of C-V curve shows that the frequency and saturation of the loop affect C-V property significantly. Analysis of I-V curve shows a moderate Vg and a high Vds benefit the separation of MFIS memory states. [ABSTRACT FROM AUTHOR]

The article focuses on the development of science and technology of integrated ferroelectrics as it became one of the important intersecting disciplines of information science and technology. The improvement of ferroelectric thin film preparation and the enhancement of its characteristics make appearance of various new devices possible. Nonvolatile ferroelectric memory, the microelectromechanical technology has been also made significant progress.

The article reports updates on the International Society for Information Fusion (ISIF). The Advisory Board decided to hold the 17th ISIF in Shanghai, China because of the comprehensive research program on integrated ferroelectrics and its applications. The following were honored during the 17th ISIF: Carlos Paz de Araujo, Paul Muralt, Marcus Schumacher, and Sanjeev Aggarwal.