Search

CoFe2O4/(Pb0.6Sr0.4)TiO3bi-layered composite film exhibits ferromagnetic and ferroelectric responses (Ms∼ 162 emu/cm3,Hc∼ 1.8 kOe, 2Pr∼ 8.6 µC/cm2and 2Ec∼ 634 kV/cm) at room temperature. The temperature dependent dielectric anomaly near magnetic phase transition temperature suggests magnetoelectric coupling effect in the composite film. The maximumMDeffect can reach as high as ∼49% at 3 kOe applied DC magnetic field. The composite film exhibits magnetoelectric voltage co-efficientαME∼ 67 mVcm−1Oe−1. The photoluminescence emission bands of the composite film have a significant blue shift as compared to those reported for CFO and PST nanostructures. [ABSTRACT FROM AUTHOR]

MnFe2O4/(Pb0.8Sr0.2)TiO3(MFO/PST20) heterostructured composite films with three different structures have been grown on Pt/TiO2/SiO2/Si substrates by metal–organic decomposition processing via spin coating technique. The structural analysis revealed that the crystal axes of the MnFe2O4are aligned with those of the PST20 ferroelectric matrix with obvious interfaces and no diffusions exist in all the three composite films. These composite films exhibit simultaneously multiferroic and magnetoelectric responses at room temperature. The growth structure of MFO and PST20 layers has an effect on multiferroic and magnetoelectric coupling behaviours of the composite films. The bi- and four-layered MFO/PST20 composite films exhibit superior ferroelectric properties compared to the tri-layered film. The increasing MFO and PST20 layers in the composite films enhance ferromagnetic properties and are closely related to the strain release in MnFe2O4phase. The MFO/PST20 bi-layered composite film shows a high magnetoelectric voltage co-efficientαE~ 194 mVcm−1Oe−1at a dc magnetic fieldHdc~ 2.5 kOe. A significant decrease inαEvalue has been observed for tri- and four- layered composite films. A close correlation between phase selective residual stress and magnetoelectric properties has been emerged. The results are reasonably encouraging for employing MnFe2O4for growing multiferroic–magnetoelectric composite films. [ABSTRACT FROM AUTHOR]