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β-BaTi2O5 (β-BT2) nanorods were obtained for the first time by a simple hydrothermal method from a dried gel precursor. The influence of NaOH solution concentration sfrom 0.1 M to 2 M on crystallisation and microstructure was discussed. β-BT2 nanorod with a single-crystal structure exhibited obvious piezoelectric response and piezocatalytic capability for rhodamine B. The degradation of RhB by β-BT2 nanorods under ultrasonic irradiation demonstrated that β-BT2 was a potential piezocatalyst. The proposed strategy can serve as a valuable reference for the synthesis of β-BT2 nanorods and their application in piezocatalysis. [ABSTRACT FROM AUTHOR]

Based on a shaking table experiment a 1:25 scaled frame-shearwall structure model with large-span steel transfer trusses and finite-element analysis, the dynamic characteristics, seismic responses in the elastic and elastic-plastic phases, and destructive forms of the structure were studied. It was observed that cracks developed as the earthquake wave acceleration increased, but no severe cracking developed in the structure during the experiment. In the seismic responses caused by the artificial accelerogram, the site accelerogram and the El Centro accelerogram, that caused by the artificial accelerogram was the most intense. The interstory drift between transfer stories is large, which means that the transfer stories might be weak. However, the seismic performance of the steel truss transfer stories was good and the structural system was able to meet the seismic requirements regulated by the Chinese Design Code. [ABSTRACT FROM AUTHOR]

A p-channel metal/ferroelectric/polycrystalline silicon/insulator/silicon structure field effect transistor (FET) with a Pb(Zr0.52Ti0.48)O3 ferroelectric layer has been proposed and demonstrated. The Pb(Zr0.52Ti0.48)O3 ferroelectric layer (200 nm) was deposited by radio frequency magnetron sputtering. The counterclockwise capacitance-voltage (C-V) characteristics of the capacitor and the clockwise drain current-gate voltage (Id-Vg) characteristics of the p-channel ferroelectric FET demonstrate that the device can realize a memory effect due to the ferroelectric polarization of the Pb(Zr0.52Ti0.48)O3 thin film. The size of the memory windows has been investigated. The memory widow measured from C-V and Id-Vg curves of the device are consistent. [ABSTRACT FROM AUTHOR]

The variations of polarization and dielectric properties with the grain size of PZT films have been investigated experimentally and theoretically. It is revealed that polarization increases much more quickly with the grain size than dielectric constant does. The polarization increases as the grain size increases and is saturated when the grain size is about 60 nm, whereas the dielectric constant is saturated when the grain size is about 70 nm. Because the dielectric response of ferroelectrics is affected by the domain switching and exhibits hysteresis, the contribution of domain dynamics to the dielectric properties must be considered. Varying grain size will change the domain dynamics due to the close relationship of domain width and grain size. Based on the Landau-Ginzburg (LG) model, the variations of remnant polarization and dielectric constant against grain sizes have been investigated, considering the contribution of domain motion. The calculation result is consistent with the experimental result. [ABSTRACT FROM AUTHOR]

The variations of polarization and dielectric properties with the grain size of PZT films have been investigated experimentally and theoretically. It is revealed that polarization increases much more quickly with the grain size than dielectric constant does. The polarization increases as the grain size increases and is saturated when the grain size is about 60nm, whereas the dielectric constant is saturated when the grain size is about 70 nm. Because the dielectric response of ferroelectrics is affected by the domain switching and exhibits hysteresis, the contribution of domain dynamics to the dielectric properties must be considered. Varying grain size will change the domain dynamics due to the close relationship of domain width and grain size. Based on the Landau-Ginzburg (LG) model, the variations of remnant polarization and dielectric constant against grain sizes have been investigated, considering the contribution of domain motion. The calculation result is consistent with the experimental result. [ABSTRACT FROM AUTHOR]

SrBi2Ta2O9 (SBT) thin films with different textures were fabricated by pulsed laser deposition under different deposition conditions. The influence of the deposition condition on the texture of the SBT films can be explained by the interactions between the plume and the substrate. With the aid of x-ray diffractometry, piezoreponse scanning probe microscopy, and ferroelectric-property measurements, a correlation between the film texture, as well as the domain structure, and the ferroelectric properties was established. It was found that the ferroelectrics properties, such as the polarization and the coercive field, had a strong dependence on the texture of the SBT films. What's more, 90° domains were observed in the (115)-textured SBT films. These results are of interest for the fabrication of ferroelectric memories with fatigue free SBT thin films. [ABSTRACT FROM AUTHOR]

Pb(Zr0.52Ti0.48)O3 (PZT) and SrBi2Ta2O9 (SBT) films have been fabricated onto Pt/Ti/SiO2/Si substrates with a new chemical solution deposition (CSD) technique, in which PbZrO3(PZ)/PbTiO3(PT) and SrTa2O6(ST)/Bi2O3(B) precursors were spin-coated and heated individually. Polycrystalline PZT and SBT films were formed through the reactions between the multilayers at relative low temperatures, without post-annealing. With the aid of AFM, an island-column hybrid growth mode and a nucleus growth mode were suggested for the PZT and SBT film growths, respectively. However, it was found that the deposition orders affected substantially the microstructure of SBT films. This study suggests that the processing temperatures for the ferroelectric film fabrications can be reduced with alternate deposition of multilayers. [ABSTRACT FROM AUTHOR]