1. Modeling of 1S-1R crossbar array with Ti-doped VO2-based selector device.
- Author
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Dilna, U. and Prasad, S. N.
- Subjects
- *
STRAY currents , *MOTION picture acting , *VANADIUM dioxide - Abstract
This article proposes a Ti-doped Vanadium dioxide (VO2) selector device for reducing the leakage current. Here, TiO2 is formed by the Ti atoms in the VO2 film for acting like a good insulator. Hence, it reduces the integration density when the leakage current in a Cross Bar Array (CBA) is increased. In this article, the modeled Pt/Ti-doped VO2/Pt selector device is integrated with the resistive random-access memory model to demonstrate its effectiveness on sneak path current reduction. The I ON / I OFF ratio of the suggested Ti-doped VO2 selector is higher than 2 × 1 0 4. The simulated results outputs in terms of nonlinearity (∼ 28 × 1 0 4 ), current density (∼ 10 7 A cm − 2 ), and leakage current(∼0.31nA). [ABSTRACT FROM AUTHOR]
- Published
- 2024
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