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Lead zirconate titanate thin films were successfully prepared on 5-inch TiO x /Pt/ Ti/SiO 2 /Si substrates by RF-Magnetron Sputtering method using a 0.8Pb(Zr 0.3 Ti 0.7 )O 3 + 0.2PbO ceramic target. The experimental results show that the orientation of PZT thin films can be change from (111) to (100) by precisely controlling the substrate temperature. The (111)-oriented films with the thickness of 500 nm thick, have the remanent polarization of 20 μC/cm 2 , dielectric constant of 370, dielectric loss of 1.5%, and coercive field of 130 KV/cm. By using dynamic measurement, the pyroelectric coefficient of the order of 10 -8 C/cm 2 K was determined. Thermal-electric conversion studies indicate significant potential for uncooled infrared focal plane detector arrays. [ABSTRACT FROM AUTHOR]