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A novel co-designed transition from InP monolithic microwave integrated circuits to silicon micromachined waveguides is presented. The transition couples a microstrip line to a substrate waveguide sitting on top of a vertical waveguide. The silicon part of the transition consists of a top and a bottom chip, fabricated in a very low-loss silicon micromachined waveguide technology using silicon on insulator wafers. The transition has been designed, fabricated and characterized for 220 GHz to 330 GHz in a back-to-back configuration. Measured insertion loss is 3 dB to 6 dB at 250 GHz to 300 GHz , and return loss is in excess of 5 dB., Not duplicacte with DiVA 1485372QC 20231002

A novel co-designed transition from InP monolithic microwave integrated circuits to silicon micromachined waveguides is presented. The transition couples a microstrip line to a substrate waveguide sitting on top of a vertical waveguide. The silicon part of the transition consists of a top and a bottom chip, fabricated in a very low-loss silicon micromachined waveguide technology using silicon on insulator wafers. The transition has been designed, fabricated and characterized for 220 GHz to 330 GHz in a back-to-back configuration. Measured insertion loss is 3 dB to 6 dB at 250 GHz to 300 GHz , and return loss is in excess of 5 dB., Not duplicacte with DiVA 1485372QC 20231002

A novel co-designed transition from InP monolithic microwave integrated circuits to silicon micromachined waveguides is presented. The transition couples a microstrip line to a substrate waveguide sitting on top of a vertical waveguide. The silicon part of the transition consists of a top and a bottom chip, fabricated in a very low-loss silicon micromachined waveguide technology using silicon on insulator wafers. The transition has been designed, fabricated and characterized for 220 GHz to 330 GHz in a back-to-back configuration. Measured insertion loss is 3 dB to 6 dB at 250 GHz to 300 GHz , and return loss is in excess of 5 dB., Not duplicacte with DiVA 1485372QC 20231002

A novel co-designed transition from InP monolithic microwave integrated circuits to silicon micromachined waveguides is presented. The transition couples a microstrip line to a substrate waveguide sitting on top of a vertical waveguide. The silicon part of the transition consists of a top and a bottom chip, fabricated in a very low-loss silicon micromachined waveguide technology using silicon on insulator wafers. The transition has been designed, fabricated and characterized for 220 GHz to 330 GHz in a back-to-back configuration. Measured insertion loss is 3 dB to 6 dB at 250 GHz to 300 GHz , and return loss is in excess of 5 dB., Not duplicacte with DiVA 1485372QC 20231002

A novel co-designed transition from InP monolithic microwave integrated circuits to silicon micromachined waveguides is presented. The transition couples a microstrip line to a substrate waveguide sitting on top of a vertical waveguide. The silicon part of the transition consists of a top and a bottom chip, fabricated in a very low-loss silicon micromachined waveguide technology using silicon on insulator wafers. The transition has been designed, fabricated and characterized for 220 GHz to 330 GHz in a back-to-back configuration. Measured insertion loss is 3 dB to 6 dB at 250 GHz to 300 GHz , and return loss is in excess of 5 dB., Not duplicacte with DiVA 1485372QC 20231002