1. Diffusion and Electrical Behavior of Al Implanted into Capped Si
- Author
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V. Raineri, G. Galvagno, Antonino Scandurra, Alberto Torrisi, and Ferruccio Frisina
- Subjects
Thin layers ,Materials science ,Silicon ,Renewable Energy, Sustainability and the Environment ,Analytical chemistry ,chemistry.chemical_element ,Mineralogy ,Nitride ,Condensed Matter Physics ,Thermal diffusivity ,Semimetal ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,Secondary ion mass spectrometry ,Ion implantation ,chemistry ,Transmission electron microscopy ,Materials Chemistry ,Electrochemistry - Abstract
The diffusion and the electrical behavior of Al implanted in the dose of 1 x 10[sup 13] to 5 x 10[sup 15] cm[sup [minus]2] at 300 keV in capped and uncapped Si is investigated. The Al-based precipitates which are formed when Al concentration exceeds its solid solubility in Si are electrically inactive. The out-diffusion phenomenon that is always present in uncapped samples reduces the Al dose diffused into Si substrate. A study on the electrical activity of Al implanted in Si through SiO[sub 2], Si[sub 3]N[sub 4], and Si[sub 3]N[sub 4]/SiO[sub 2] capping films also is presented. In these capped samples Al segregation in SiO[sub 2] layer occurs. The electrically active doses are small and comparable to that of uncapped samples. The authors studied the diffusivity of Al in bulk SiO[sub 2] and Si[sub 3]N[sub 4] at 1,200 C. The fast Al diffusion through SiO[sub 2] thin layers is driven by a chemical reaction between Al and SiO[sub 2] starting from the SiO[sub 2]/Si interface.
- Published
- 1993