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1-D tungsten oxide nanowires exhibiting distinctive electrochromic, gaschromic properties; in this study, we demonstrate an innovative way to fabricate the tungsten oxide nanowires on silicon substrate. The suggested growth mechanism is Vapor-Solid (VS) growth, while, the nitrogen-doping tungsten oxide nanowires were fabricated via the ammonia decomposition during the formation process. Their nano-devices were successful fabricated and the variety devices characteristics were reported.

GaN nanowires were synthesized by reaction of metal gallium vapor with ammonia and hydrogen gases at the temperature of 700 °C on the amorphous SiO2 substrate. The morphologies of GaN nanowires are wirelike with a length up to 5 μm and the average diameter of GaN nanowires measured by transmission electron microscopy (TEM) is about 25 nm. The x-ray diffraction analysis of as-synthesized products indicates that the nanowires have the hexagonal wurtzite structure of GaN crystal. The corresponding electron diffraction pattern also indicates that the as-synthesized GaN nanowires exhibited a single-crystal feature with uniform oxygen doping characterized by electron energy loss spectroscopy.