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In this work, we studied the temperature dependences of endurance cycling properties on atomic layer deposition (ALD) HfAlO metal-ferroelectric-metal (MFM) capacitor in the range from 25 °C, 40 °C, 50 °C and 75 °C. Base on experiment results, it is found the reduction percentage of the ferroelectric memory window (2Pr) from 6.5 μC cm−2 (25 °C) to 6.3 μC cm−2 (75 °C) is only 3%, indicating that the ferroelectric HfAlO film has a robust operating temperature stability. The excellent high temperature endurance properties show around 30% of the original 2Pr value (6.3 μC cm−2) can be held after being fatigued up to 108 endurance cycles at 75 °C without breakdown. Additionally, using Arrhenius plot fitting (ln(J/E) vs 1/kT) before and after endurance cycles was extracted the changes of trapping energy level to better understand the relationship between leakage current, oxygen vacancies or defects tapping of polarization-switching behavior in HfAlO ferroelectric film.

The electrical characteristics of titanium dioxide films grown on p-type indium phosphide substrate by metallorganic chemical vapor deposition (MOCVD) were studied. For indium phosphide with ammonium sulfide treatment, the electrical characteristics are improved due to the reduction of interface state density. The electrical characteristics can be further improved by postmetallization annealing. The hydrogen from the postmetallization annealing process can passivate the defects and the grain boundaries of polycrystalline TiO 2 film. The leakage current densities can reach 2.7 and 2.3 X 10 -7 A/cm 2 under positive and negative electric fields at 1 MV/cm, respectively. The dielectric constant and effective oxide charges are 46 and 1.96 X 10 12 C/cm 2 , respectively. The interface state density is 7.13 X 10 11 cm -2 eV -1 at the energy of 0.67 eV from the edge of valence band.

The electrical characteristics, including current-voltage, capacitance-voltage, hysteresis loops, and interface state density, of liquid-phase-deposited (LPD)-SiO 2 grown on p-type (100) indium phosphide substrates with and without (NH 4 ) 2 S x treatments were investigated. The aqueous solution of hydrofluosilicic acid and boric acid were used as the growth solution for silicon dioxide films. The indium phosphide with ammonium sulfide treatment improves the electrical characteristics. The electrical characteristics depend on the boric acid concentration in the growth solution. The leakage currents can reach 6.24 and 8.14 X 10 -8 A/cm 2 under positive and negative electric fields at 0.5 MV/cm. The effective oxide charges are -5.33 X 10 10 C/cm 2 . The interface state density is 9.65 X 10 10 cm -2 eV -1 at the energy of 0.67 eV from the valance band.