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Graphene plasmons with tunable resonance wavelengths and low loss have attracted considerable attention in the past decade. However, the weatk interaction between graphene and light, which is attributed to the low carrier concentration and small thickness of graphene, severely hinders the practical application of graphene plasmon. In the infrared wavelength range, graphene can act as a tunable load to modify both the resonance wavelength and the damping of metal plasmon, which has been successfully used for light intensity and phase modulations. In this work, a synthetic phase meta-atom composed of a split ring resonator and a graphene patch is designed with a switchable reflection phase of either 0 or π. The large phase tuning range arises from the graphene induced strong modification of metal plasmon. By arranging the 0/π phase bits in different spatial orders, one-dimensional grating with a dynamically tunable period and orientation can be obtained.

Ultrafast carrier dynamics in intrinsic and n-doped InSb crystals were studied by time-resolved terahertz spectroscopy using an optical pump-terahertz probe setup with pump fluence from 32 μJ/cm2 to 1910 μJ/cm2. With photoexcitation at 800 nm, the ultrafast photoinduced absorption and carrier recovery process of intrinsic and n-doped InSb showed strong pump fluence dependence. It was found that the magnitude of photoinduced absorption first increased and then decreased with pump fluence. The carrier recovery process could be well fitted with a single exponential curve at low pump fluence, but could be well fitted with a biexponential curve at high pump fluence when a fast photocarrier relaxation appeared. The magnitude of photoinduced absorption increased gradually at low pump fluence due to the increase of the carrier at the bottom of the conduction band by impact ionization. The magnitude of photoinduced absorption decreased gradually at high pump fluence, possibly due to the efficiency of transient Auger recombination greater than the rate of carriers generated in the impact ionization process. The fast decay process appearing at high pump fluence was thought to be dominated by transient Auger recombination.

We report the broadband terahertz (THz) radiation in ferromagnetic half-metallic Heusler alloy Co2MnSn thin film upon the irradiation of a femtosecond laser pulse at room temperature. The magnetic-, sample symmetry-, and pump fluence-dependent THz emission reveals that the THz radiation is originated from the magnetic-dipole radiation, i.e., the light-induced subpicosecond demagnetization. In addition, by optical pump-THz probe spectroscopy, we found that the photoexcited increase of the scattering rate of hot carriers thereby leads to the photoinduced negative THz conductivity in Co2MnSn thin film.

In this article, a novel metamaterial is designed aimed at generating a single electromagnetic hot spot, in order to realize the localization of the incident electromagnetic field at terahertz band, and this kind of metastructure is an ideal candidate for many research fields such as spintronics, nonlinear magnetic response, near-field optics, and optical antenna, etc. The specially tailored metamaterial takes the shape of diabolo with a metal triangle pair connected by a cubic gallium arsenide (GaAs) gap. We demonstrated by simulation that both electric- and magnetic-field of incident THz pulse can be confined in the small GaAs gap when a synchronized femtosecond laser pulse is illuminated. The numerical simulation results show that 2 orders of magnitude of field enhancement can be obtained for a 1-by-1 μm GaAs gap, and the field enhancement factor can also be further improved by tailoring the GaAs gap down to nanometer scale.

A new terahertz (THz) modulator based on bias-driven carrier conductivity change in a heterojunction was proposed. BiFeOsub3/subfilm and silicon were selected as building blocks for fabricating the THz modulator. THz nonlinear transmission as a function of bias voltage was studied systematically. THz peak transmission as a function of bias shows a similar tendency as the current-voltage response of the heterojunction: the forward bias leads to the exponential enhancement of THz transmission, and in contrast, the reverse bias shows no observable changes in THz transmission. The modulation depth and modulation bandwidth of THz pulse can reach up to 42% and 1.0 THz with forward bias of 4.8 V, respectively. The observed bias dependent THz transmission in the BFO/Si heterojunction is well-interpreted by the proposed model: the diffused carriers across the heterojunction are localized in BFO thin film with applied forward bias. Our finding provides great potential for applications in designing all electrical broadband THz modulators.

Femtosecond pulse laser with tilted intensity front demonstrates the capability of rotating the writing of nanograting in glass in 3D space. Other than the light polarization, this phenomenon is also associated with the quill-writing effect, which depends on the correlation between the sample movement and the pulse front tilt. This is because a pondermotive force, perpendicular to the tilted intensity plane, can push the excited electron plasma forward towards the pulse front. This behavior further tilts the electrical field plane and eventually result in a forced rotation of nanograting in 3D space.

A scheme to generate individually modulated femtosecond pulse string by multilayer volume holographic grating (MVHG) is proposed. Based on Kogelnik's coupled-wave theory and matrix optics, temporal and spectral expressions of diffracted field are given when a femtosecond pulse is diffracted by a MVHG. It is shown that the number of diffracted sub-pulses in the pulse string equals to the number of grating layers of the MVHG, peak intensity and duration of each diffracted sub-pulse depend on thickness of the corresponding grating layer, whereas pulse interval between adjacent sub-pulses is related to thickness of the corresponding buffer layer. Thus by modulating parameters of the MVHG, individually modulated femtosecond pulse string can be acquired. Based on Bragg selectivity of the volume grating and phase shift provided by the buffer layers, we give an explanation on these phenomena. The result is useful to design MVHG-based devices employed in optical communications, pulse shaping and processing.

By employing femtosecond pump-probe configuration, we successfully realized narrowband terahertz wave generation and detection in both photorefractive periodically poled lithium niobate (PPLN) and periodically poled Mg:LiNb(3) (PP-Mg:LN) crystal. Using an applied magnetic field, we achieved modulation of the terahertz wave in a photorefractive PPLN crystal. The terahertz wave depends strongly on the magnitude of the applied magnetic field in the photorefractive PPLN crystal. Terahertz wave independence of the magnetic field in PP-Mg:LN crystal was also identified. The interaction of the magnetic field and photorefractive PPLN crystal is believed to occur due to the Lorentz force, which results in the buildup of a space-charge field in a photorefractive PPLN crystal.

One-dimensional (1D) photonic crystals (PC) containing two-layer CdS defects are proposed and fabricated by using electron beam evaporation. Ultrafast nonlinear optical responses were characterized with the ultrafast pump-probe method in both time and spectral domains. Two-photon absorption coefficient enhancement and pump-beam-induced defect mode shift were reported. Both effects are attributed to the light localization in the defect layer of the multilayer structures. Our results demonstrated that defective photonic crystals are good candidates for fabrication of ultrafast all-optical switching devices.