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We demonstrate inorganic halide perovskite quantum-dots-based white light-emitting diodes via three different geometries, including liquid, solid, and hybrid types. Problems of fast anion exchange and aggregation in the cases of liquid- and solid-type devices are discussed in detail and push us to move towards the fabrication of a hybrid-type device structure. The experiment results illustrate that a hybrid-type device has the highest luminance efficiency (51 lm/W) and a wide color gamut (122% of NTSC and 91% of Rec. 2020). Therefore, we conclude that a hybrid-type device can provide an outstanding color gamut for high color gamut display applications.

Full-color displays based on micro light-emitting diodes (μLEDs) can be fabricated on monolithic epitaxial wafers. Nanoring (NR) structures were fabricated on a green LED epitaxial wafer; the color of NR-μLEDs was tuned from green to blue through strain relaxation. An Al2O3 layer was deposited on the sidewall of NR-μLEDs, which improved the photoluminescence intensity by 143.7%. Coupling with the exposed multiple quantum wells through nonradiative resonant energy transfer, red quantum dots were printed to NR-μLEDs for a full-color display. To further improve the color purity of the red light, a distributed Bragg reflector is developed to reuse the excitation light.

We demonstrate an elliptical gold nanodisk array (GNA) for engineering the spectral profile of surface lattice resonance (SLR). The nanodisk's shape has a great impact on SLR. Small linewidth of 20 nm at an aspect ratio of 1.17, as well as large wavelength tuning of 64 nm within 4% strain via different orientations and polarizations, are achieved experimentally. The enhanced wavelength response of 6.93 nm per 1% strain variation for elliptical GNA is 2.4 times better than that for general circular GNA. Furthermore, the strain sensing for elliptical GNA approaches is 5.7 times greater than that for circular GNA.

This study presents an approach for patterning a polydimethylsiloxane (PDMS) phosphor film with a photonic crystal nano-honeycomb structure on a blue chip package. A phosphor film with a nano-honeycomb structure was patterned and transferred using a nanosphere and used for fabricating remote white light-emitting diodes (w-LEDs). The angular correlated color temperature deviation of the remote phosphor LED could be improved by varying nano-honeycomb structure pitches (450, 750, and 1150 nm). In particular, w-LED samples with excellent color uniformity (ΔCCT ranging from 940 to 440 K) were fabricated from 750-nm w-LED samples with nano-honeycomb-patterned tops.

The combination of ZnO, InN, and GaN epitaxial layers is explored to provide long wavelength photodetection capability in the GaN based materials. Growth temperature optimization was performed to obtain the best quality of InN epitaxial layer in the MOCVD system. The temperature dependent photoluminescence (PL) can provide the information about thermal quenching in the InN PL transitions and at least two non-radiative processes can be observed. X-ray diffraction and energy dispersive spectroscopy are applied to confirm the inclusion of indium and the formation of InN layer. The band alignment of such system shows a typical double heterojunction, which is preferred in optoelectronic device operation. The photodetector manufactured by this ZnO/GaN/InN layer can exhibit extended long-wavelength quantum efficiency, as high as 3.55%, and very strong photocurrent response under solar simulator illumination.

The hybrid white light-emitting didoes (LED) with polyfluoren (PFO) polymer and quantum dot (QD) was investigated using dispensing method at the different correlated color temperature (CCT) for cool and warm color temperature. This result indicates that the hybrid white LED device has the higher luminous efficiency than the convention one, which could be attributed to the increased utilization rate of the UV light. Furthermore, the CIE 1931 coordinate of high quality white hybrid LED with different CCT range from 3000K to 9000K is demonstrated. Consequently, the angular-dependent CCT and the thermal issue of the hybrid white LED device were also analyzed in this study.

This study demonstrates the application of DBR structure into the remote phosphor structure to improve the angular correlated color temperature (CCT) deviation in white light-emitting diodes (WLEDs). In the experiment, the LED device with DBR structure yielded a higher luminous efficiency than a conventional structure. The CCT deviation can be improved from 1758K to 280K in a range of −70 to 70 degree and the luminous flux increases more than 10% due to the enhancement of the light extraction of the blue light. Moreover, the reflectance of the different DBR structures is analyzed with different angles to reveal the reasons of such improvements. As the result, this LED device with DBR structure shows the great potential to use as the next generation lighting source.

In this work, flip-chip ultraviolet light-emitting diodes (FCUV-LEDs) on patterned sapphire substrate (PSS) at 375 nm were grown by an atmospheric pressure metal organic chemical vapor deposition (AP-MOCVD). A specialized reactive plasma deposited (RPD) AlN nucleation layer was utilized on the PSS to enhance the quality of the epitaxial layer. By using high-resolution X-ray diffraction, the full-width at half-maximum of the rocking curve shows that the FCUV-LEDs with RPD AlN nucleation layer had better crystalline quality when compared to conventional GaN nucleation samples. From the transmission electron microscopy (TEM) image, it can be observed that the tip and incline portion of the pattern was smooth using the RPD AlN nucleation layer. The threading dislocation densities (TDDs) are reduced from 7 × 107 cm−2 to 2.5 × 107 cm−2 at the interface between the u-GaN layers for conventional and AlN PSS devices, respectively. As a result, a much higher light output power was achieved. The improvement of light output power at an injection current of 20 mA was enhanced by 30%. Further photoluminescence measurement and numerical simulation confirm such increase of output power can be attributed to the improvement of material quality and light extraction.

For manipulating nanometric particles, we propose a photonic crystal waveguide cavity design with a waist structure to enhance resonance characteristic of the cavity. For trapping a polystyrene particle of 50 nm radius on the lateral side of the waist, the optical force can reach 2308 pN/W with 24.7% signal transmission. Threshold power of only 0.32 mW is required for stable trapping. The total length of the device is relatively short with only ten photonic crystal periods, and the trapping can occur precisely and only at the waist. The designed cavity can also provide particle detection and surrounding medium sensing using the transmission spectrum with narrow linewidth. The simulated figure of merit of 110.6 is relatively high compared with those obtained from most plasmonic structures for sensing application. We anticipate this design with features of compact, efficient, and versatile in functionality will be beneficial for developing lab-on-chip in the future.

We design a slotted photonic crystal waveguide (S-PhCW) and numerically propose that it can efficiently transport polystyrene particle with diameter as small as 50 nm in a 100 nm slot. Excellent optical confinement and slow light effect provided by the photonic crystal structure greatly enhance the optical force exerted on the particle. The S-PhCW can thus transport the particle with optical propulsion force as strong as 5.3 pN/W, which is over 10 times stronger than that generated by the slotted strip waveguide (S-SW). In addition, the vertical optical attraction force induced in the S-PhCW is over 2 times stronger than that of the S-SW. Therefore, the S-PhCW transports particles not only efficiently but also stably. We anticipate this waveguide structure will be beneficial for the future lab-on-chip development.

We investigate the variations of modal properties of 12-fold quasi-photonic crystal microcavities sustaining whispering-gallery (WG) mode with different central post sizes both in simulations and experiments. We realize our design by a series of dry- and wet-etching processes. WG mode lasing actions are obtained with high quality (Q) factor of 8,400 from microcavity with effective post size 420 nm in diameter. Loss and thermal behaviors are analyzed by measured Q factors, thresholds, and rolling-off effects from light-in light-out curves of microcavities with increased post size. By finite-element simulations, we also address the heat sink improvement due to presence of larger central post that is observed in measurements.

In this report, we investigate a photonic crystal circular-shaped microcavity (removing seven air holes) sustaining whispering-gallery mode (WGM) by shifting the 12 nearest air holes according to the concept of cavity-shaping in micro-disk and micro-gear lasers. The WGM modal characteristics are investigated by three-dimensional (3D) finite-difference time-domain (FDTD) simulations. From well-fabricated devices and simulated results, we obtain and identify WGM single-mode lasing with low threshold and high measured quality factor. By inserting additional waveguides, we also investigate its uniform coupling behaviors in different waveguide-cavity-waveguide geometries in both FDTD simulations and experiments.

Suspended-membrane 19-missing-hole microcavities in triangular lattice photonic crystals are numerically modeled by a three-dimensional finite-difference time-domain method. The resonance frequencies and the quality factors are calculated by interpolation of the discrete Fourier transformation series of the field with a Pade polynomial. The numerical results are compared with the photoluminescent spectra measured on the cavity of a nearly identical dimension. The symmetry properties of the defect modes are analyzed with the group theory, and resonance modes in the photonic-crystal cavities are identified as irreducible representations of the C_6v point group. The far-field radiations of the identified modes in the free space are also calculated by use of a vector Green's function. It is found that the numerical results agree very well with the experimental measurement in various aspects.