78 results on '"Agarwal, Anant"'
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2. High-Mobility SiC MOSFETs with Chemically Modified Interfaces
3. Optical Triggering of High Current (1300 A), High-Voltage (12 kV) 4H-SiC Thyristor
4. 1200 V 4H-SiC DMOSFET with an Integrated Gate Buffer
5. 20 kV 4H-SiC N-IGBTs
6. Strategic Overview of High-Voltage SiC Power Device Development Aiming at Global Energy Savings
7. Investigation of Nitrided Atomic-Layer-Deposited Oxides in 4H-SiC Capacitors and MOSFETs
8. 15 kV, Large Area (1 cm2), 4H-SiC p-Type Gate Turn-Off Thyristors
9. 15 kV IGBTs in 4H-SiC
10. Optical Triggering of 12 kV 1 cm2 4H-SiC Thyristors
11. 16 kV, 1 cm2, 4H-SiC PiN Diodes for Advanced High-Power and High-Temperature Applications
12. Temperature Dependence of Inversion Layer Carrier Concentration and Hall Mobility in 4H-SiC MOSFETs
13. High dI/dt Pulse Switching of 1.0 cm2 SiC GTOs
14. Effect of Stacking Faults Originating from Half Loop Arrays on Electrical Behavior of 10 kV 4H-SiC PiN Diodes
15. 12 kV, 1 cm2 SiC GTO Thyristors with Negative Bevel Termination
16. Development of 1200 V, 3.7 mΩ-cm2 4H-SiC DMOSFETs for Advanced Power Applications
17. 4H-SiC MOSFETs with Si-Like Low-Frequency Noise Characteristics
18. High-Temperature Performance of 1200 V, 200 A 4H-SiC Power DMOSFETs
19. Development of 15 kV 4H-SiC IGBTs
20. Bipolar Degradation of High Voltage 4H-SiC p-i-n Diodes in Pulse Regime
21. 9 kV, 1 cm2 SiC Gate Turn-Off Thyristors
22. 10 kV, 10 A Bipolar Junction Transistors and Darlington Transistors on 4H-SiC
23. A 10 kV 4H-SiC Bipolar Turn Off Thyristor (BTO) with Positive Temperature Coefficient of VF, Current Saturation Capability and Fast Switching Speed
24. Performance, Reliability, and Robustness of 4H-SiC Power DMOSFETs
25. Electrical and Thermal Performance of 1200 V, 100 A, 200°C 4H-SiC MOSFET-Based Power Switch Modules
26. Fast Switch-Off of High Voltage 4H–SiC npn BJTs from Deep Saturation Mode
27. Influence of Shockley Stacking Fault Generation on Electrical Behavior of 4H-SiC 10 kV MPS Diodes
28. Effect of Band-Edge Interface Traps and Transition Region Mobility on Transport in 4H-SiC MOSFETs
29. Critical Issues for MOS Based Power Devices in 4H-SiC
30. Two-Branch Boron Diffusion from Gas Phase in n-Type 4H-SiC
31. Performance of 60 A, 1200 V 4H-SiC DMOSFETs
32. SiC Epitaxial Growth on Multiple 100-mm Wafers and its Application to Power-Switching Devices
33. Effect of Recombination-Induced Stacking Faults on Majority Carrier Conduction and Reverse Leakage Current on 10 kV SiC DMOSFETs
34. 4H-SiC Bipolar Junction Transistors with a Current Gain of 108
35. 12 kV 4H-SiC p-IGBTs with Record Low Specific On-Resistance
36. Critical Technical Issues in High Voltage SiC Power Devices
37. 9 kV 4H-SiC IGBTs with 88 mΩ·cm2 of R diff, on
38. A Comparison of High Temperature Performance of SiC DMOSFETs and JFETs
39. A Case for High Temperature, High Voltage SiC Bipolar Devices
40. High Temperature DC-DC Converter Performance Comparison Using SiC JFETs, BJTs and Si MOSFETs
41. High Temperature Characterization of 4H-SiC Bipolar Junction Transistors
42. A Study on the Reliability and Stability of High Voltage 4H-SiC MOSFET Devices
43. Development of 8 mΩ-cm2, 1.8 kV 4H-SiC DMOSFETs
44. Performance Comparison of 1.5kV 4H-SiC Buried Channel and Lateral Channel JBS Rectifiers
45. Influence of Basal Plane Dislocation Induced Stacking Faults on the Current Gain in SiC BJTs
46. Characteristics and Ionization Coefficient Extraction of 1kV 4H-SiC Implanted Anode PiN Rectifiers with Near Ideal Performance Fabricated Using AlN Capped Annealing
47. 400 Watt Boost Converter Utilizing Silicon Carbide Power Devices and Operating at 200°C Baseplate Temperature
48. Performance Assessment of 4H-SiC Bipolar Junction Transistors and Insulated Gate Bipolar Transistors
49. Simulations of 10 kV Trench Gate IGBTs on 4H-SiC
50. Analysis of the Effect of Temperature on Base Current Gain in Power 4H-SiC BJTs
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