1. Characterization of Post Etch Residues Depending on Resist Removal Processes after Aluminum Etch
- Author
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Maria Heidenblut, D. Sturm, Alfred Lechner, and Franz Faupel
- Subjects
Materials science ,Plasma etching ,fungi ,technology, industry, and agriculture ,Analytical chemistry ,Infrared spectroscopy ,chemistry.chemical_element ,macromolecular substances ,Condensed Matter Physics ,Atomic and Molecular Physics, and Optics ,Metal ,stomatognathic system ,Chemical engineering ,Resist ,chemistry ,Aluminium ,visual_art ,visual_art.visual_art_medium ,Molecule ,General Materials Science ,Wafer ,Spectroscopy - Abstract
The subject of this report is the characterization of plasma etch residues after a metal etch process with Cl2/BCl3 etch gases. One of the interactive factors in the removability of the residues is the photo-mask removal process (DSQ). Depending on the DSQ process the molecular structure of the residues will differ. For our findings, we used laser spectroscopy and Fourier-transformed infrared spectroscopy to obtain information about the degree of the cross-linking of the molecular structure of residues in a post-metal etch cleaning process. The post-etch cleaning is important for removing residues remaining after the metal structuring process. The main goal is to use emission spectroscopy for studying the compounds of the dry-etch related residues. Finally, it was shown that small variations in wafer treatment directly after dry-etching results in different solubilities of residues in HDA (hydroxylamine) based solutions. [1]
- Published
- 2009
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