1. Static and Dynamic Characterization of a 3.3 Kv, 45 A 4H-Sic MOSFET
- Author
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Sayan Acharya, B. Jayant Baliga, Subhashish Bhattacharya, Edward Van Brunt, Kasunaidu Vechalapu, Shadi Sabri, Kijeong Han, Anup Anurag, David Grider, Ghanshyamsinh Gohil, and Brett Hull
- Subjects
010302 applied physics ,Materials science ,business.industry ,Mechanical Engineering ,020208 electrical & electronic engineering ,02 engineering and technology ,Condensed Matter Physics ,01 natural sciences ,Characterization (materials science) ,Mechanics of Materials ,0103 physical sciences ,MOSFET ,0202 electrical engineering, electronic engineering, information engineering ,Optoelectronics ,General Materials Science ,business - Abstract
Wide bandgap materials such as Silicon Carbide (SiC) has enabled the use of medium voltage unipolar devices like Metal-Oxide Field Effect Transistors (MOSFETs) and Junction Field Effect Transistors (JFETs), which can switch at much higher frequencies as compared to their silicon counterparts. It is therefore imperative to evaluate the performance of these medium voltage devices. In this paper, the static characterization and the switching performance of the new single die 3.3 kV, 45 A 4H-SiC MOSFET developed by Cree Inc are presented. The switching performance is measured through the conventional Double Pulse Test. Testing is done at a dc-link voltage of 1.5 kV for different values of current, and gate resistances.
- Published
- 2018
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