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Aluminium doping TaNx thin films were deposited on Al2O3 ceramic wafers by DC reactive magnetron sputtering. The influences of nitrogen partial flux on the phase structures and the electrical properties of the samples were investigated in detail. The results show that the main phases in the samples are gradually changed from poor nitrogen phases to rich nitrogen phases with the increase of the nitrogen partial flux. The deposition rate of the samples is decreased with the increase of the nitrogen partial flux. With the increase of the nitrogen partial flux, the resistivity and the absolute value of the temperature coefficient of resistance (TCR) of the samples increase slowly at lower nitrogen partial flux, and then increase remarkably at higher nitrogen partial flux. These experimental results can be explained by the presentation of rich nitrogen phases with higher resistivity and absolute value of the TCR when the samples were prepared at higher nitrogen partial flux.

NiCr-NiSi K-type thin film thermocouples with multi-layer structure were fabricated on Ni-based superalloy substrates (95 mm×35 mm×2 mm). The multi-layer structure contains NiCrAlY buffer layer (2 μm)/ thermally grown Al2O3 bond coating (200 nm)/ Al2O3 insulating layer (8 μm)/ NiCr-NiSi thin film thermocouples (1 μm)/ Al2O3 protecting layer (500 nm). The samples were statically calibrated in a tube furnace in the temperature range from 170 °C to 610 °C. The results show that the resistance of Al2O3 insulating layer is about 14.6 kΩ at 800 °C and exceeds 100 MΩ at room temperature. The Seebeck coefficient a of the samples is about 34 μV/°C, and the sensitivity coefficient K is greater than 0.8 in the temperature range from 170 °C to 610 °C. The maximal sensitivity coefficient is about 0.97 at 265 °C.

In this paper, the influences of depositing angles on TbFe film magnetic and magnetostrictive characteristics were discussed. TbFe films were deposited by DC magnetron sputtering. With the decrease of depositing angles from 900 to 150, TbFe film in-plane magnetization measured at 1600kA.m-1 external field is greatly increased. With the decrease of depositing angles from 900 to 150, the magnetostrictive saturation field is decreased. TbFe film in-plane magnetostriction is improved when depositing angles are changed from 900 to 150. Magnetic domain structures detected by MFM indicates that film easy magnetization direction is gradually changed from perpendicular to parallel with the decrease of depositing angles. The variation of film magnetic and magnetostrictive performances can be explained by the oblique anisotropy associated with columnar grain morphology of the films.

In this paper, the influences of annealing temperature on TbFe magnetostrictive film magnetic and magnetostrictive characteristics were discussed. TbFe films were prepared by RF magnetron sputtering. XRD patterns indicate that polycrystalline films consisting mainly of a-Fe and TbFe2 Laves phase could be obtained through rapid cycle annealing process (RCAP) at higher annealing temperature. Grain sizes could be controlled through varying annealing temperature. From film hysteresis loops measured by VSM, it has been found that the annealing treatment can improve TbFe film in-plane magnetization at 1600 kA.m-1 external field, and decrease in-plane coercivity. Magnetostriction of annealed TbFe films measured by optical cantilever deflectometer is better than as-deposited films at 40 kA.m-1 external magnetic field.