1. The Distribution Trend of Boron Atoms in Semiconductor Silicon under High Temperature
- Author
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Li Li Liu, Wei Hai Song, Hui Jun Yu, Zhi Bin Zhao, Ming Ming Jiang, Li Zhang, Chuan Zhong Chen, and Zhao Zhihuan
- Subjects
010302 applied physics ,Materials science ,Silicon ,Distribution (number theory) ,business.industry ,Mechanical Engineering ,chemistry.chemical_element ,02 engineering and technology ,021001 nanoscience & nanotechnology ,01 natural sciences ,Molecular physics ,Semiconductor ,chemistry ,Mechanics of Materials ,0103 physical sciences ,General Materials Science ,0210 nano-technology ,business ,Boron - Abstract
The ProENGINEER software is used to build a geometric model for the whole process cavity and internal structure and conduct the internal dynamic simulation of cavity with different diffusion temperatures of 1,000°C, 1,050°C, 1,100°C and 1,150°C, and different diffusion time of 5 min, 10 min, 15 min and 20 min. Analyze the process control indexes by combining with specific thermal diffusion test, and study the relationship between hydrodynamic parameters and diffusion uniformity, Comprehensively investigate the effects of the diffusion temperature and diffusion time on doping, achieving the requirements of impurity distribution in materials.
- Published
- 2021
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