82 results on '"Kato, Tomohisa"'
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2. Anomalous Temperature Dependence of the Hall Coefficient of Heavily Al-Doped 4H-SiC Epilayers in the Band Conduction Region
3. Non-Plasma Dry Etcher Design for 200 mm-Diameter Silicon Carbide Wafer
4. Formation of Double Shockley Stacking Faults in Heavily Nitrogen Doped 4H-SiC Crystal with Reduction of Residual Stress around Scratch Damage
5. Anomalous Conduction between the Band and Nearest-Neighbor Hopping Conduction Regions in Heavily Al-Doped p-Type 4H-SiC
6. Etching Rate Profile of C-Face 4H-SiC Wafer Depending on Total Gas Flow Rate of Chlorine Trifluoride and Nitrogen
7. Application of Defect Conversion Layer by Solution Growth for Reduction of TSDs in 4H-SiC Bulk Crystals by PVT Growth
8. Initiation of Shockley Stacking Fault Expansion in 4H-SiC P-i-N Diodes
9. Chlorine Trifluoride Gas Distributor Design for Single-Crystalline C-Face 4H-Silicon Carbide Wafer Etcher
10. Relationship between Temperature Dependencies of Resistivity and Hall Coefficient in Heavily Al-Doped 4H-SiC Epilayers
11. Comparison of Conduction Mechanisms in Heavily Al-Doped 4H-SiC and Heavily Al- and N-Codoped 4H-SiC
12. Influence of Additives on Surface Smoothness and Polytype Stability in Solution Growth of n-Type 4H-SiC
13. Immobilization Phenomenon of Partials Surrounding Double Shockley Stacking Faults in Heavily Nitrogen Doped 4H-SiC Crystal with Thermal Anneal
14. 4H-Silicon Carbide Wafer Surface after Chlorine Trifluoride Gas Etching
15. A Method to Adjust Polycrystalline Silicon Carbide Etching Rate Profile by Chlorine Trifluoride Gas
16. Solvent Design for High-Purity SiC Solution Growth
17. Extension of Stacking Faults in 4H-SiC pn Diodes under a High Current Pulse Stress
18. Suppression of the Forward Degradation in 4H-SiC PiN Diodes by Employing a Recombination-Enhanced Buffer Layer
19. Bulk Growth of Low Resistivity n-Type 4H-SiC Using Co-Doping
20. Correlation between Local Strain Distribution and Microstructure of Grinding-Induced Damage Layers in 4H-SiC(0001)
21. Growth of Low Resistivity p-Type 4H-SiC Crystals by Sublimation with Using Aluminum and Nitrogen Co-Doping
22. Etching Rate Behavior of 4H-Silicon Carbide Epitaxial Film Using Chlorine Trifluoride Gas
23. Spatial Distribution of Carrier Concentration in 4H-SiС Crystal Grown by Solution Method
24. Planarization of 6-Inch 4H-SiC Wafer Using Catalyst-Referred Etching
25. 4H-SiC Growth from Si-Cr-C Solution under Al and N Co-Doping Conditions
26. Chlorine Trifluoride Gas Transport and Etching Rate Distribution in Silicon Carbide Dry Etcher
27. Influences of Solution Flow and Lateral Temperature Distribution on Surface Morphology in Solution Growth of SiC
28. Effect of Forced Convection by Crucible Design in Solution Growth of SiC Single Crystal
29. Device Performance and Switching Characteristics of 16 kV Ultrahigh-Voltage SiC Flip-Type n-Channel IE-IGBTs
30. Change in Surface Morphology by Addition of Impurity Elements in 4H-SiC Solution Growth with Si Solvent
31. Polarity Inversion of SiC(0001) during the Al Doped PVT Growth
32. Growth Study of p-Type 4H-SiC with Using Aluminum and Nitrogen Co-Doping by 2-Zone Heating Sublimation Method
33. Reliability of Gate Oxides on 4H-SiC Epitaxial Surface Planarized by CMP Treatment
34. High-Speed Slicing of SiC Ingot by High-Speed Multi Wire Saw
35. 13-kV, 20-A 4H-SiC PiN Diodes for Power System Applications
36. Effects of Machining Fluid on Electric Discharge Machining of SiC Ingot
37. Microstructural Analysis of Damaged Layer Introduced during Chemo-Mechanical Polishing
38. Characterization of the Defect Evolution in Thick Heavily Al-Doped 4H-SiC Epilayers
39. Development of Silicon Carbide Dry Etcher Using Chlorine Trifluoride Gas
40. Growth of Low Resistivity n-Type 4H-SiC Bulk Crystals by Sublimation Method Using Co-Doping Technique
41. A Novel Grinding Technique for 4H-SiC Single-Crystal Wafers Using Tribo-Catalytic Abrasives
42. Development of Multi-Wire Electric Discharge Machining for SiC Wafer Processing
43. Growth of 4H-SiC in Current-Controlled Liquid Phase Epitaxy
44. Slicing of Rotating SiC Ingot by Electric Discharge Machining
45. Growth Rate and Surface Morphology of 4H-SiC Single Crystal Grown under Various Supersaturations Using Si-C Solution
46. Density of Etch Pits on C-Face 4H-SiC Surface Produced by ClF3 Gas
47. Control of Void Formation in 4H-SiC Solution Growth
48. Challenges of High-Performance and High-Reliablity in SiC MOS Structures
49. Cutting Speed of Electric Discharge Machining for SiC Ingot
50. Density and Behavior of Etch Pits on C-Face 4H-SiC Surface Produced by CIF3 Gas
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