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6 results on '"NOVASiC"'

1. p-Type Doping of 4H- and 3C-SiC Epitaxial Layers with Aluminum

Author

Marc Portail, Adrien Michon, Pawel Kwasnicki, Marcin Zielinski, Sylvie Contreras, Thierry Chassagne, Hervé Peyre, Sandrine Juillaguet, Leszek Konczewicz, Roxana Arvinte, NOVASiC, Savoie Technolac, NOVASiC, Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Laboratoire Charles Coulomb (L2C), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, Materials science, Hybrid physical-chemical vapor deposition, Mechanical Engineering, Al content, chemistry.chemical_element, Nanotechnology, 02 engineering and technology, Chemical vapor deposition, Substrate (electronics), Combustion chemical vapor deposition, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Epitaxy, 01 natural sciences, chemistry, Chemical engineering, Mechanics of Materials, Aluminium, 0103 physical sciences, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], General Materials Science, P type doping, 0210 nano-technology, ComputingMilieux_MISCELLANEOUS
Abstract

Exhaustive experimental study of aluminum incorporation in epitaxial 4H-SiC and 3C‑SiC films grown by chemical vapor deposition (CVD) was performed. The influence of polytype and substrate orientation was verified. Role of principal process conditions (growth temperature and pressure, deposition rate, chemical environment) was investigated in details. Finally, the evolution of optical properties of resulting SiC films with Al content was examined.

Published
2016
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2. Influence of Site Competition Effects on Dopant Incorporation during Chemical Vapor Deposition of 4H-SiC Epitaxial Layers

Author

Marc Portail, Pawel Kwasnicki, Marcin Zielinski, Thierry Chassagne, Sandrine Juillaguet, Adrien Michon, Roxana Arvinte, Hervé Peyre, Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), NOVASiC, NOVASiC, Savoie Technolac, Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Laboratoire Charles Coulomb (L2C), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Dopant, Mechanical Engineering, media_common.quotation_subject, Inorganic chemistry, chemistry.chemical_element, Chemical vapor deposition, Condensed Matter Physics, Epitaxy, complex mixtures, Nitrogen, Competition (biology), chemistry, Chemical engineering, Mechanics of Materials, Aluminium, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], General Materials Science, Thin film, ComputingMilieux_MISCELLANEOUS, media_common
Abstract

An exhaustive experimental study of the influence of C/Si ratio on voluntary incorporation of nitrogen (N) and aluminum (Al) in 4H-SiC thin films is presented. The films were grown by chemical vapor deposition (CVD) in a horizontal, hot wall CVD reactor on Si- and C-face substrates, under Si-rich and C-rich conditions. Under some conditions the observed variation of dopant incorporation with C/Si ratio could be clearly attributed to the site competition effects, while in several cases other mechanisms have to be taken into account.

Published
2015
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3. Optical Characterization of p-Type 4H-SiC Epilayers

Author

Gediminas Liaugaudas, Marcin Zielinski, Pawel Kwasnicki, Roxana Arvinte, Sandrine Juillaguet, Donatas Dargis, Kęstutis Jarašiūnas, Hervé Peyre, Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), and NOVASiC

Subjects
Electron mobility, Materials science, Diffusion, Analytical chemistry, chemistry.chemical_element, 02 engineering and technology, Epitaxy, 01 natural sciences, symbols.namesake, Aluminium, 0103 physical sciences, General Materials Science, 010302 applied physics, business.industry, Mechanical Engineering, Doping, Carrier lifetime, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Characterization (materials science), chemistry, Mechanics of Materials, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], symbols, Optoelectronics, 0210 nano-technology, business, Raman scattering
Abstract

A series of aluminium doped (from 2×1016to 8×1019cm-3) 4H-SiC epitaxial layers were mainly studied by Low Temperature Photoluminescence and time-resolved optical pump-probe techniques to determine the concentration of aluminium, its activation ratio, the doping related carrier lifetime, hole mobility and excess carrier diffusion length.

Published
2015
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4. X-Ray Diffraction and Raman Spectroscopy Study of Strain in Graphene Films Grown on 6H-SiC(0001) Using Propane-Hydrogen-Argon CVD

Author

Thierry Chassagne, Pierre Muller, Stéphane Vézian, Marcin Zielinski, Jean Roch Huntzinger, Adrien Michon, Marc Portail, Ludovic Largeau, Antoine Tiberj, Denis Lefebvre, Fabien Cheynis, Olivia Mauguin, Frédéric Leroy, Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Centre Interdisciplinaire de Nanoscience de Marseille (CINaM), Aix Marseille Université (AMU)-Centre National de la Recherche Scientifique (CNRS), NOVASiC, Savoie Technolac, Université Nice Sophia Antipolis (... - 2019) (UNS), and Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU)

Subjects
Materials science, Hydrogen, Analytical chemistry, chemistry.chemical_element, Nanotechnology, 02 engineering and technology, 01 natural sciences, law.invention, symbols.namesake, chemistry.chemical_compound, law, Propane, 0103 physical sciences, General Materials Science, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, ComputingMilieux_MISCELLANEOUS, Graphene oxide paper, Argon, Graphene, Mechanical Engineering, 021001 nanoscience & nanotechnology, Condensed Matter Physics, chemistry, Mechanics of Materials, X-ray crystallography, symbols, 0210 nano-technology, Raman spectroscopy, Graphene nanoribbons
Abstract

We have grown graphene films on 6H-SiC(0001) using propane CVD and evidenced the strong impact of the hydrogen/argon mixture used as the carrier gas on the graphene/SiC interface and on the orientation of graphene layers. By studying a set of samples grown with different hydrogen/argon mixture using Raman spectroscopy and grazing incidence X-ray diffraction, we evidence the links between graphene/SiC interface and strain in graphene.

Published
2013
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5. Raman Investigation of Aluminum-Doped 4H-SiC

Author

Marcin Zielinski, Leszek Konczewicz, Sylvie Contreras, Jean Camassel, Hervé Peyre, Sandrine Juillaguet, Pawel Kwasnicki, Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), NOVASiC, Alexander A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov and Mikhail E. Levinshtein, and NETFISiC project (Grant No. PITN-GA-2010-264613)

Subjects
4H-SiC, Materials science, media_common.quotation_subject, p doping, Analytical chemistry, chemistry.chemical_element, 02 engineering and technology, Low frequency, 01 natural sciences, Asymmetry, symbols.namesake, Aluminium, Distortion, 0103 physical sciences, General Materials Science, Coherent anti-Stokes Raman spectroscopy, media_common, 010302 applied physics, Range (particle radiation), Mechanical Engineering, Doping, 021001 nanoscience & nanotechnology, Condensed Matter Physics, chemistry, Mechanics of Materials, Raman spectroscopy, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], symbols, SIMS measurements, 0210 nano-technology, Fano interference effects
Abstract

Raman scattering spectra have been collected on p-type 4H-SiC samples doped with aluminum up to 5×1019atoms per cubic cm. The distortion and asymmetry of FTA modes which appear in the low frequency range has been probed in great details. We show that, using standard Fano formulae with three parameters per mode, one can successively fit all FTA modes profiles in the concentration range 2×1016– 5×1019Al.cm-3.

Published
2013
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6. Structural and Electrical Properties of Graphene Films Grown by Propane/Hydrogen CVD on 6H-SiC(0001)

Author

E. Roudon, Jean Camassel, Adrien Michon, Sébastien Chenot, Thierry Chassagne, Denis Lefebvre, Marc Portail, Marcin Zielinski, Yvon Cordier, Sylvie Contreras, Stéphane Vézian, Benoit Jouault, Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Institut de Recherche en Communications et en Cybernétique de Nantes (IRCCyN), Mines Nantes (Mines Nantes)-École Centrale de Nantes (ECN)-Ecole Polytechnique de l'Université de Nantes (EPUN), Université de Nantes (UN)-Université de Nantes (UN)-PRES Université Nantes Angers Le Mans (UNAM)-Centre National de la Recherche Scientifique (CNRS), NOVASiC, Savoie Technolac, Devaty, RP and Dudley, M and Chow, TP and Neudeck, and PG

Subjects
Materials science, Hydrogen, Stacking, chemistry.chemical_element, 3C-SiC/Si, Nanotechnology, 02 engineering and technology, 01 natural sciences, law.invention, chemistry.chemical_compound, 6H-SiC, law, Propane, 0103 physical sciences, General Materials Science, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, Growth pressure, Graphene, Mechanical Engineering, CVD, 021001 nanoscience & nanotechnology, Condensed Matter Physics, chemistry, Chemical engineering, Mechanics of Materials, 0210 nano-technology
Abstract

14th International Conference on Silicon Carbide and Related Materials (ICSCRM 2011), Cleveland, OH, SEP 11-16, 2011; International audience; We have grown graphene on SiC(0001) using propane-hydrogen CVD. In this work, we present the effects of growth pressure and temperature on structural and electrical properties. Structural characterizations evidence the formation of graphene with in-plane rotational disorder, except for low growth pressure and high growth temperature which lead to the formation of a (6 root 3x6 root 3)-30 degrees interface between graphene and SiC. Electrical properties of samples presenting different graphene/SiC stacking and interfaces are compared and discussed.

Published
2012
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