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The dielectric properties of -SiAlON and various cations doped -SiAlON bulk ceramics prepared by a hot-press method were investigated. The dielectric properties (dielectric constant and tangent loss) were characterized by a post-resonator method (Hakki-Coleman method) at room temperature in the microwave frequency range. The effect of z-values about -SiAlON was examined, and also the effects of various interstitial cations on dielectric properties of -SiAlON were studied. Dielectric properties of -SiAlON were compared with those of Si3N4 and -SiAlON and their relationship between the dielectric properties and the cationic species of SiAlON were discussed.

-SiAlON with various z-values (z = 0.5~4.0) were produced by hot pressing. The dielectric properties (dielectric constant and tangent loss) of -SiAlON were characterized by the post-resonator method at room temperature and by the perturbation method from room temperature to 1200 oC at 2.45 GHz, respectively. Effect of z-values and temperatures with -SiAlON were investigated.