1. Microstructure Investigation of He+- Implanted and Post-Implantation-Annealed 4H-SiC
- Author
-
Jin Yu Li, Li Qing Zhang, Zhao Nan Ding, Yu Guang Chen, Chonghong Zhang, Jian Yang Li, Tong Min Zhang, Long Kang, Hui Ping Liu, Xianlong Zhang, and Juan Liu
- Subjects
Materials science ,Annealing (metallurgy) ,Mechanical Engineering ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Microstructure ,01 natural sciences ,symbols.namesake ,Mechanics of Materials ,0103 physical sciences ,symbols ,General Materials Science ,Fourier transform infrared spectroscopy ,Composite material ,010306 general physics ,0210 nano-technology ,Post implantation ,Raman spectroscopy - Abstract
Microstructure damage and evolution in 4H-SiC under He-ion implantation and post-annealing have been investigated by the combination of fourier transform infrared spectrometer (FTIR), Raman scattering spectroscopy and high resolution X-ray diffractometer (HRXRD). After implantation, the 4H-SiC specimen exhibits a heavy damage and some amorphous state appear. With increasing annealing temperature, to some extent recovery in damaged lattices was observed, as a result of the peaks of Raman and HRXRD regain their intensities. However, the reverse annealing behavior in damaged peaks was displayed after annealed at 973K. This reverse annealing effect was revealed to be due to the formation and the growth of He bubbles above 973K.
- Published
- 2019