1. Solar-blind ultraviolet photodetector based on vertically aligned single-crystalline β-Ga2O3 nanowire arrays
- Author
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Hua Xuemei, Tao Tao, Xiangqian Xiu, Li Yuewen, Zili Xie, Rong Zhang, Youdou Zheng, Bin Liu, Liying Zhang, Peng Chen, and Yuxia Zhu
- Subjects
010302 applied physics ,Materials science ,business.industry ,Physics ,QC1-999 ,Nanowire ,Photodetector ,02 engineering and technology ,021001 nanoscience & nanotechnology ,medicine.disease_cause ,01 natural sciences ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,Nanomaterials ,solar-blind photodetector ,0103 physical sciences ,vertical β-ga2o3 nanowire arrays ,medicine ,inductively coupled plasma etching ,Optoelectronics ,Electrical and Electronic Engineering ,0210 nano-technology ,business ,Ultraviolet ,Biotechnology - Abstract
Vertically aligned nanowire arrays, with high surface-to-volume ratio and efficient light-trapping absorption, have attracted much attention for photoelectric devices. In this paper, vertical β-Ga2O3 nanowire arrays with an average diameter/height of 110/450 nm have been fabricated by the inductively coupled plasma etching technique. Then a metal-semiconductor-metal structured solar-blind photodetector (PD) has been fabricated by depositing interdigital Ti/Au electrodes on the nanowire arrays. The fabricated β-Ga2O3 nanowire PD exhibits ∼10 times higher photocurrent and responsivity than the corresponding film PD. Moreover, it also possesses a high photocurrent to dark current ratio (I light/I dark) of ∼104 and a ultraviolet/visible rejection ratio (R 260 nm/R 400 nm) of 3.5 × 103 along with millisecond-level photoresponse times.
- Published
- 2020
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