32 results on '"Chen, Kevin J"'
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2. Strain Release in GaN Epitaxy on 4° Off‐Axis 4H‐SiC
3. Assessment of osteoarthritis functional outcomes and intra‐articular injection volume in the rat anterior cruciate ligament transection model
4. Suppression of Green Luminescence of Mg‐Ion‐Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature
5. Bias Temperature Instability of Normally-Off GaN MIS-FET with Low-Pressure Chemical Vapor Deposition SiN xGate Dielectric
6. Trapping mechanisms in insulated-gate GaN power devices: Understanding and characterization techniques
7. Optoelectronic devices on AlGaN/GaN HEMT platform (Phys. Status Solidi A 5∕2016)
8. Toward reliable MIS- and MOS-gate structures for GaN lateral power devices
9. On-chip addressable Schottky-on-heterojunction light-emitting diode arrays on AlGaN/GaN-on-Si platform
10. Surface nitridation for improved dielectric/III-nitride interfaces in GaN MIS-HEMTs (Phys. Status Solidi A 5∕2015)
11. Surface nitridation for improved dielectric/III-nitride interfaces in GaN MIS-HEMTs
12. Technology for III‐N heterogeneous mixed‐signal electronics
13. GaN‐to‐Si vertical conduction mechanisms in AlGaN/GaN‐on‐Si lateral heterojunction FET structures
14. Degradation of transient OFF-state leakage current in AlGaN/GaN HEMTs induced by ON-state gate overdrive
15. AlN/GaN heterostructure TFTs with plasma enhanced atomic layer deposition of epitaxial AlN thin film
16. Characterization of V T ‐instability in enhancement‐mode Al 2 O 3 ‐AlGaN/GaN MIS‐HEMTs
17. UV-illuminated dielectrophoresis by two-dimensional electron gas (2DEG) in AlGaN/GaN heterojunction
18. Characterization of V th ‐instability in Al 2 O 3 /GaN/AlGaN/GaN MIS‐HEMTs by quasi‐static C‐V measurement
19. Normally-off AlGaN/GaN power tunnel-junction FETs
20. Microspheres manipulation system by patterned AlGaN/GaN 2DEG electrodes
21. Surface properties of Al x Ga 1‐x N/GaN heterostructures treated by fluorine plasma: an XPS study
22. Enhancement‐mode AlGaN/GaN HEMT and MIS‐HEMT technology
23. GaN smart power IC technology
24. Modulation of polarization field by fluorine ions in AlGaN/GaN heterostructures revealed by positron annihilation spectroscopy
25. On the stability of fluorine ions in AlGaN/GaN heterostructures: a molecular dynamics simulation study
26. Study of diffusion and thermal stability of fluorine ions in GaN by Time‐of‐Flight Secondary Ion Mass Spectroscopy
27. A second-order dual-band bandpass filter using a dual-band admittance inverter
28. Integration of enhancement and depletion‐mode AlGaN/GaN MIS‐HFETs by fluoride‐based plasma treatment
29. 1.9‐GHz low noise amplifier using high‐linearity and low‐noise composite‐channel HEMTs
30. Enhancement‐mode AlGaN/GaN HEMTs on silicon substrate
31. Gate leakage in AlGaN/GaN HEMTs and its suppression by optimization of MOCVD growth
32. Low‐loss microwave filters on CMOS‐grade standard silicon substrate with low‐k BCB dielectric
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