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16 results on '"Di, Dawei"'

1. Electronic State Engineering in Perovskite‐Cerium‐Composite Nanocrystals toward Enhanced Triplet Annihilation Upconversion

Author

Gong, Nan, primary, Lai, Runchen, additional, Xing, Shiyu, additional, Liu, ZhengZheng, additional, Mo, Junyao, additional, Man, Tao, additional, Li, Zicheng, additional, Di, Dawei, additional, Du, Juan, additional, Tan, Dezhi, additional, Liu, Xiaofeng, additional, Qiu, Jianrong, additional, and Xu, Beibei, additional

Published
2023
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4. Deep‐Red Perovskite Light‐Emitting Diodes with External Quantum Efficiency Exceeding 21% Enabled by Ligand‐Modulated Dimensionality Control

Author

Liu, Zhe, primary, Peng, Xiaomei, additional, Xing, Shiyu, additional, Qiu, Weidong, additional, Li, Mengke, additional, Shen, Chao, additional, Sun, Guanwei, additional, Zhou, Zhisheng, additional, Gu, Qing, additional, Pu, Junrong, additional, Yang, Jiaji, additional, Zhang, Jibin, additional, Liu, Denghui, additional, Shen, Chenyang, additional, Qing, Jian, additional, Xue, Qifan, additional, Yip, Hin‐Lap, additional, Di, Dawei, additional, Hou, Lintao, additional, Qi, Zhengjian, additional, and Su, Shi‐Jian, additional

Published
2022
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6. Investigation of Electrode Electrochemical Reactions in CH3 NH3 PbBr3 Perovskite Single-Crystal Field-Effect Transistors

Author

Wang, Junzhan, Senanayak, Satyaprasad P, Liu, Jie, Hu, Yuanyuan, Shi, Yanjun, Li, Zelun, Zhang, Caixin, Yang, Bingyan, Jiang, Longfeng, Di, Dawei, Ievlev, Anton V, Ovchinnikova, Olga S, Ding, Tao, Deng, Huixiong, Tang, Liming, Guo, Yunlong, Wang, Jianpu, Xiao, Kai, Venkateshvaran, Deepak, Jiang, Lang, Zhu, Daoben, Sirringhaus, Henning, Sirringhaus, Henning [0000-0001-9827-6061], and Apollo - University of Cambridge Repository

Subjects
single crystals, perovskite, field-effect transistors (FETs)
Abstract

Optoelectronic devices based on metal halide perovskites, including solar cells and light-emitting diodes, have attracted tremendous research attention globally in the last decade. Due to their potential to achieve high carrier mobilities, organic-inorganic hybrid perovskite materials can enable high-performance, solution-processed field-effect transistors (FETs) for next-generation, low-cost, flexible electronic circuits and displays. However, the performance of perovskite FETs is hampered predominantly by device instabilities, whose origin remains poorly understood. Here, perovskite single-crystal FETs based on methylammonium lead bromide are studied and device instabilities due to electrochemical reactions at the interface between the perovskite and gold source-drain top contacts are investigated. Despite forming the contacts by a gentle, soft lamination method, evidence is found that even at such "ideal" interfaces, a defective, intermixed layer is formed at the interface upon biasing of the device. Using a bottom-contact, bottom-gate architecture, it is shown that it is possible to minimize such a reaction through a chemical modification of the electrodes, and this enables fabrication of perovskite single-crystal FETs with high mobility of up to ≈15 cm2 V-1 s-1 at 80 K. This work addresses one of the key challenges toward the realization of high-performance solution-processed perovskite FETs.

Published
2019
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7. Fast Lasing Wavelength Tuning in Single Nanowires

Author

Xu, Peizhen, primary, Gong, Jue, additional, Guo, Xin, additional, Xin, Chenguang, additional, Wu, Hao, additional, Qing, Peng, additional, Lin, Xing, additional, Fang, Wei, additional, Di, Dawei, additional, and Tong, Limin, additional

Published
2019
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8. Investigation of Electrode Electrochemical Reactions in CH 3 NH 3 PbBr 3 Perovskite Single‐Crystal Field‐Effect Transistors

Author

Wang, Junzhan, primary, Senanayak, Satyaprasad P., additional, Liu, Jie, additional, Hu, Yuanyuan, additional, Shi, Yanjun, additional, Li, Zelun, additional, Zhang, Caixin, additional, Yang, Bingyan, additional, Jiang, Longfeng, additional, Di, Dawei, additional, Ievlev, Anton V., additional, Ovchinnikova, Olga S., additional, Ding, Tao, additional, Deng, Huixiong, additional, Tang, Liming, additional, Guo, Yunlong, additional, Wang, Jianpu, additional, Xiao, Kai, additional, Venkateshvaran, Deepak, additional, Jiang, Lang, additional, Zhu, Daoben, additional, and Sirringhaus, Henning, additional

Published
2019
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14. Silicon quantum dot based solar cells: addressing the issues of doping, voltage and current transport

Author

Conibeer, Gavin, primary, Green, Martin A., additional, König, Dirk, additional, Perez-Wurfl, Ivan, additional, Huang, Shujuan, additional, Hao, Xiaojing, additional, Di, Dawei, additional, Shi, Lei, additional, Shrestha, Santosh, additional, Puthen-Veetil, Binesh, additional, So, Yong, additional, Zhang, Bo, additional, and Wan, Zhenyu, additional

Published
2010
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15. The Physics of Light Emission in Halide Perovskite Devices

Author

Stranks, Samuel D, Hoye, Robert LZ, Di, Dawei, Friend, Richard H, and Deschler, Felix

Subjects
nonradiative decay, 13. Climate action, light-emitting diodes, solar cells, luminescence, perovskites, 7. Clean energy
Abstract

Light emission is a critical property that must be maximized and controlled to reach the performance limits in optoelectronic devices such as photovoltaic solar cells and light-emitting diodes. Halide perovskites are an exciting family of materials for these applications owing to uniquely promising attributes that favor strong luminescence in device structures. Herein, the current understanding of the physics of light emission in state-of-the-art metal-halide perovskite devices is presented. Photon generation and management, and how these can be further exploited in device structures, are discussed. Key processes involved in photoluminescence and electroluminescence in devices as well as recent efforts to reduce nonradiative losses in neat films and interfaces are discussed. Finally, pathways toward reaching device efficiency limits and how the unique properties of perovskites provide a tremendous opportunity to significantly disrupt both the power generation and lighting industries are outlined.

16. Efficient Triplet Exciton Fusion in Molecularly Doped Polymer Light-Emitting Diodes

Author

Johannes M. Richter, Kevin P. Musselman, Ahmed Y. Alyamani, Dan Credgington, Lorenzo Meraldi, Dawei Di, Rashid Altamimi, Richard H. Friend, Le Yang, Judith L. MacManus-Driscoll, Di, Dawei [0000-0003-0703-2809], Credgington, Daniel [0000-0003-4246-2118], Friend, Richard [0000-0001-6565-6308], and Apollo - University of Cambridge Repository

Subjects
Materials science, Quantum yield, Physics::Optics, 02 engineering and technology, Electroluminescence, 010402 general chemistry, 01 natural sciences, chemistry.chemical_compound, OLED, General Materials Science, molecularly doped polymer OLEDs, Singlet state, solution-processing, Rubrene, solid-state TTA upconversion, Diode, business.industry, Mechanical Engineering, Doping, singlet exciton fission, 021001 nanoscience & nanotechnology, 0104 chemical sciences, chemistry, Mechanics of Materials, triplet exciton fusion, Optoelectronics, 0210 nano-technology, business, Perylene
Abstract

Solution-processed polymer organic light-emitting diodes (OLEDs) doped with triplet-triplet annihilation (TTA)-upconversion molecules, including 9,10-diphenylanthracene, perylene, rubrene and TIPS-pentacene, are reported. The fraction of triplet-generated electroluminescence approaches the theoretical limit. Record-high efficiencies in solution-processed OLEDs based on these materials are achieved. Unprecedented solid-state TTA-upconversion quantum yield of 23% (TTA-upconversion reaction efficiency of 70%) at electrical excitation well below one-sun equivalent is observed.

Published
2017

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