1. Optical Absorption and Electroabsorption Related to Electronic and Single Dopant Transitions in Holey Elliptical GaAs Quantum Dots
- Author
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R.L. Restrepo, C.A. Duque, M.E. Mora-Ramos, Alvaro Morales, Mauricio Alejandro Londoño, Esin Kasapoglu, A. Radu, El Mustapha Feddi, J.A. Vinasco, [Alejandro Vinasco, Juan -- Luis Morales, Alvaro -- Alberto Duque, Carlos] Univ Antioquia, Fac Ciencias Exactas & Nat, Inst Fis, Grp Mat Condensada, Calle 70 52-21, Medellin, Colombia -- [Alejandro Londono, Mauricio] Univ Antioquia, Fac Ciencias Exactas & Nat, Inst Matemat, Calle 70 52-21, Medellin, Colombia -- [Leon Restrepo, Ricardo] Univ EIA, Envigado 055428, Colombia -- [Eduardo Mora-Ramos, Miguel] Univ Autonoma Estado Morelos, Ctr Invest Ciencias IICBA, Ave Univ 1001, Cuernavaca 62210, Morelos, Mexico -- [Feddi, El Mustapha] Mohammed V Univ Rabat, ENSET, Grp Optoelect Semicond & Nanomat, Rabat, Morocco -- [Radu, Adrian] Univ Politehn Bucuresti, Dept Phys, 313 Splaiul Independentei, RO-060042 Bucharest, Romania -- [Kasapoglu, Esin] Cumhuriyet Univ, Dept Phys, Fac Sci, TR-58140 Sivas, Turkey, Restrepo, R. L. -- 0000-0002-0359-353X, and Feddi, El mustapha -- 0000-0001-6641-3623
- Subjects
Materials science ,Dopant ,business.industry ,donor impurity ,ellipsoidal quantum dot ,finite element method ,GaAs ,Binding energy ,02 engineering and technology ,binding energy ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,Electronic, Optical and Magnetic Materials ,Quantum dot ,0103 physical sciences ,Optoelectronics ,010306 general physics ,0210 nano-technology ,Absorption (electromagnetic radiation) ,business - Abstract
12th International Conference on Optics of Surfaces and Interfaces (OSI) -- JUN 25-30, 2017 -- Trin Coll Dublin, Sch Phys, Dublin, IRELAND, WOS: 000430113000017, The electron states in a holey elliptically shaped GaAs quantum dot are investigated within the effective mass scheme with the use of the adiabatic approximation and the finite element method. The effects of a donor impurity center and an applied electric field are particularly taken into account. Electron-impurity energies are reported as functions of both the geometry of the quantum dot and the applied field intensity, whereas temperature effects are also included. The analysis of electron-impurity intersubband transitions allows the investigation of the light absorption response of the system., CODI-Universidad de Antioquia (Estrategia de Sostenibilidad de la Universidad de Antioquia); CODI-Universidad de Antioquia (research project "Manipulacion de propiedades optoelectronicas de nanoestructuras semiconductoras por ondas acusticas superficiales"); Facultad de Ciencias Exactas y Naturales-Universidad de Antioquia; Universidad EIA; Universidad de Antioquia through the EIA-UdeA-UdeM-project "Desarrollo de fotodetectores en el infrarrojo usando pozos cuanticos ajustables con dopamiento delta dentro del pozo"; Colombian Oil Company ECOPETROL; Colombian Oil Company COLCIENCIAS [0266-2013], This research was partially supported by Colombian Agencies: CODI-Universidad de Antioquia (Estrategia de Sostenibilidad de la Universidad de Antioquia and research project "Manipulacion de propiedades optoelectronicas de nanoestructuras semiconductoras por ondas acusticas superficiales") and Facultad de Ciencias Exactas y Naturales-Universidad de Antioquia (CAD and ALM exclusive dedication projects 2017-2018). RLR and CAD are grateful to Universidad EIA and Universidad de Antioquia for financial support through the EIA-UdeA-UdeM-project "Desarrollo de fotodetectores en el infrarrojo usando pozos cuanticos ajustables con dopamiento delta dentro del pozo." This work is supported by Colombian Oil Company ECOPETROL and COLCIENCIAS as a part of the research project grant No. 0266-2013.
- Published
- 2017
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