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Abstract In dealing with the increasing power dissipation of electronic systems with increasing integration density, a field‐effect transistor (FET) with steep switching slope that overcomes the thermionic limit is vital to achieve low‐power operations. Here, we report two types of threshold switching (TS) FETs based on 2D Van der Waals heterostructures by virtue of the abrupt resistive switching of the hexagonal boron nitride (hBN) TS device. The common hBN dielectric layer functions as the switching medium for the TS device and the gate dielectric for the 2D FET enabling seamless integration of the hBN TS device and baseline 2D FET. TS FET in source configuration by connecting the TS device to the source terminal of the 2D FET offers an ultralow average subthreshold swing (SS) of 1.6 mV/dec over six decades of drain current at room temperature and suppressed leakage current. TS FET in gate configuration by connecting the TS device to the gate terminal of the 2D FET also exhibits steep switching slope with ultralow SS of 10.6 mV/dec. The proposed compact device structures integrating 2D FET and TS device provide a potential approach of monolithic integration toward next‐generation low‐power electronics.

Abstract For next‐generation electronics and optoelectronics, 2D‐layered nanomaterial‐based field effect transistors (FETs) have garnered attention as promising candidates owing to their remarkable properties. However, their subthreshold swings (SS) cannot be lower than 60 mV/decade owing to the limitation of the thermionic carrier injection mechanism, and it remains a major challenge in 2D‐layered nanomaterial‐based transistors. Here, a gate‐connected MoS2 atomic threshold switching FET using a nitrogen‐doped HfO2‐based threshold switching (TS) device is developed. The proposed device achieves an extremely low SS of 11 mV/decade and a high on‐off ratio of ≈106 by maintaining a high on‐state drive current due to the steep switching of the TS device at the gate region. In particular, the proposed device can function as an infrared detectable phototransistor with excellent optical properties. The proposed device is expected to pave the way for the development of future 2D channel‐based electrical and optical transistors.