1. Room temperature uniaxial magnetic anisotropy induced by Fe-islands in the InSe semiconductor van der Waals crystal
- Author
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Moro, Fabrizio, Bhuiyan, Mahabub A., Kudrynskyi, Zakhar R., Puttock, Robert, Kazakova, Olga, Makarovsky, Oleg, Fay, Michael, Parmenter, Christopher D.J., Kovalyuk, Zakhar D., Fielding, Alistair John, Kern, Michal, and van Slageren, Joris
- Subjects
Condensed Matter::Materials Science ,InSe ,Iron ,Electron Spin Resonance (ESR) ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,van der Waals semiconductor ,Magnetic anisotropy - Abstract
The controlled manipulation of the spin and charge of electrons in a semiconductor has the potential to create new routes to digital electronics beyond Moore’s law, spintronics, and quantum detection and imaging for sensing applications. These technologies require a shift from traditional semiconducting and magnetic nanostructured materials. Here, a new material system is reported, which comprises the InSe semiconductor van der Waals crystal that embeds ferromagnetic Fe-islands. In contrast to many traditional semiconductors, the electronic properties of InSe are largely preserved after the incorporation of Fe. Also, this system exhibits ferromagnetic resonances and a large uniaxial magnetic anisotropy at room temperature, offering opportunities for the development of functional devices that integrate magnetic and semiconducting properties within the same material system.
- Published
- 2018