Search

Colloidal quantum dots (CQD) have emerged as attractive materials for infrared (IR) photodetector (PD) applications because of their tunable bandgaps and facile processing. Presently, zinc oxide is the electron-transport layer (ETL) of choice in CQD PDs; however, ZnO relies on continuous ultraviolet (UV) illumination to remove adsorbed oxygen and maintain high external quantum efficiency (EQE), speed, and photocurrent. Here, it is shown that ZnO is dominated by electropositive crystal planes which favor excessive oxygen adsorption, and that this leads to a high density of trap states, an undesired shift in band alignment, and consequent poor performance. Over prolonged operation without UV exposure, oxygen accumulates at the electropositive planes, trapping holes and degrading performance. This problem is addressed by developing an electroneutral plane composition at the ZnO surface, aided by atomic layer deposition (ALD) as the means of materials processing. It is found that ALD ZnO has 10× lower binding energy for oxygen than does conventionally deposited ZnO. IR CQD PDs made with this ETL do not require UV activation to maintain low dark current and high EQE.

Electrical-to-optical signal conversion is widely employed in information technology and is implemented using on-chip optical modulators. State-of-the-art modulator technologies are incompatible with silicon manufacturing techniques: inorganic nonlinear crystals such as LiNbO3 are integrated with silicon photonic chips only using complex approaches, and hybrid silicon-LiNbO3 optical modulators show either low bandwidth or high operating voltage. Organic perovskites are solution-processed materials readily integrated with silicon photonics; and organic molecules embedded within the perovskite scaffold allow in principle for high polarizability. However, it is found that the large molecules required for high polarizability also require an increase of the size of the perovskite cavity: specifically, using the highly polarizable DR2+ (R = H, F, Cl) in the A site necessitates the exploration of new X-site options. Only by introducing BF4- as the X-site molecule is it possible to synthesize (DCl)(NH4 )(BF4 )3 , a material exhibiting a linear EO coefficient of 20 pm V-1 , which is 10 times higher than that of metal halide perovskites and is a 1.5 fold enhancement compared to reported organic perovskites. The EO response of the organic perovskite approaches that of LiNbO3 (reff ≈ 30 pm V-1 ) and highlights the promise of rationally designed organic perovskites for use in efficient EO modulators.

Cesium lead halide perovskite quantum dots (PQDs) have attracted significant interest for optoelectronic applications in view of their high brightness and narrow emission linewidth at visible wavelengths. A remaining challenge is the degradation of PQDs during purification from the synthesis solution. This is attributed to proton transfer between oleic acid and oleylamine surface capping agents that leads to facile ligand loss. Here, a new synthetic method is reported that enhances the colloidal stability of PQDs by capping them solely using oleic acid (OA). Quaternary alkylammonium halides are used as precursors, eliminating the need for oleylamine. This strategy enhances the colloidal stability of OA capped PQDs during purification, allowing us to remove excess organic content in thin films. Inverted red, green, and blue PQD light-emitting diodes (LED) are fabricated for the first time with solution-processed polymer-based hole transport layers due to higher robustness of OA capped PQDs to solution processing. The blue and green LEDs exhibit threefold and tenfold improved external quantum efficiency (EQE), respectively, compared to prior related reports for amine/ammonium capped cross-linked PQDs. The brightest blue LED based on all inorganic CsPb(Br1−xClx)3 PQDs is also reported.

The density of trap states within the bandgap of methylammonium lead iodide single crystals is investigated. Defect states close to both the conduction and valence bands are probed. Additionally, a comprehensive electronic characterization of crystals is carried out, including measurements of the electron and hole mobility, and the energy landscape (band diagram) at the surface.

TiO2 has excellent electrochemical properties but limited solar photocatalytic performance in light of its large bandgap. One important class of visible-wavelength sensitizers of TiO2 is based on ZnFe2 O4 , which has shown fully a doubling in performance relative to pure TiO2 . Prior efforts on this important front have relied on presynthesized nanoparticles of ZnFe2 O4 adsorbed on a TiO2 support; however, these have not yet achieved the full potential of this system since they do not provide a consistently maximized area of the charge-separating heterointerface per volume of sensitizing absorber. A novel atomic layer deposition (ALD)-enhanced synthesis of sensitizing ZnFe2 O4 leaves grown on the trunks of TiO2 trees is reported. These new materials exhibit fully a threefold enhancement in photoelectrochemical performance in water splitting compared to pristine TiO2 under visible illumination. The new materials synthesis strategy relies first on the selective growth of FeOOH nanosheets, 2D structures that shoot off from the sides of the TiO2 trees; these templates are then converted to ZnFe2 O4 with the aid of a novel ALD step, a strategy that preserves morphology while adding the Zn cation to achieve enhanced optical absorption and optimize the heterointerface band alignment.

Colloidal quantum dots (CQDs) are of interest in light of their solution-processing and bandgap tuning. Advances in the performance of CQD optoelectronic devices require fine control over the properties of each layer in the device materials stack. This is particularly challenging in the present best CQD solar cells, since these employ a p-type hole-transport layer (HTL) implemented using 1,2-ethanedithiol (EDT) ligand exchange on top of the CQD active layer. It is established that the high reactivity of EDT causes a severe chemical modification to the active layer that deteriorates charge extraction. By combining elemental mapping with the spatial charge collection efficiency in CQD solar cells, the key materials interface dominating the subpar performance of prior CQD PV devices is demonstrated. This motivates to develop a chemically orthogonal HTL that consists of malonic-acid-crosslinked CQDs. The new crosslinking strategy preserves the surface chemistry of the active layer beneath, and at the same time provides the needed efficient charge extraction. The new HTL enables a 1.4× increase in charge carrier diffusion length in the active layer; and as a result leads to an improvement in power conversion efficiency to 13.0% compared to EDT standard cells (12.2%).

Infrared-absorbing colloidal quantum dots (IR CQDs) are materials of interest in tandem solar cells to augment perovskite and cSi photovoltaics (PV). Today's best IR CQD solar cells rely on the use of passivation strategies based on lead iodide; however, these fail to passivate the entire surface of IR CQDs. Lead chloride passivated CQDs show improved passivation, but worse charge transport. Lead bromide passivated CQDs have higher charge mobilities, but worse passivation. Here a mixed lead-halide (MPbX) ligand exchange is introduced that enables thorough surface passivation without compromising transport. MPbX-PbS CQDs exhibit properties that exceed the best features of single lead-halide PbS CQDs: they show improved passivation (43 ± 5 meV vs 44 ± 4 meV in Stokes shift) together with higher charge transport (4 × 10-2 ± 3 × 10-3 cm2 V-1 s-1 vs 3 × 10-2 ± 3 × 10-3 cm2 V-1 s-1 in mobility). This translates into PV devices having a record IR open-circuit voltage (IR Voc ) of 0.46 ± 0.01 V while simultaneously having an external quantum efficiency of 81 ± 1%. They provide a 1.7× improvement in the power conversion efficiency of IR photons (>1.1 µm) relative to the single lead-halide controls reported herein.

Rapid and efficient conversion of electrical signals to optical signals is needed in telecommunications and data network interconnection. The linear electro-optic (EO) effect in noncentrosymmetric materials offers a pathway to such conversion. Conventional inorganic EO materials make on-chip integration challenging, while organic nonlinear molecules suffer from thermodynamic molecular disordering that decreases the EO coefficient of the material. It has been posited that hybrid metal halide perovskites could potentially combine the advantages of inorganic materials (stable crystal orientation) with those of organic materials (solution processing). Here, layered metal halide perovskites are reported and investigated for in-plane birefringence and linear electro-optic response. Phenylmethylammonium lead chloride (PMA2 PbCl4 ) crystals are grown that exhibit a noncentrosymmetric space group. Birefringence measurements and Raman spectroscopy confirm optical and structural anisotropy in the material. By applying an electric field on the crystal surface, the linear EO effect in PMA2 PbCl4 is reported and its EO coefficient is determined to be 1.40 pm V-1 . This is the first demonstration of this effect in hybrid metal halide perovskites, materials that feature both highly ordered crystalline structures and solution processability. The in-plane birefringence and electro-optic response reveal that layered perovskite crystals could be further explored for potential applications in polarizing optics and EO modulation.

We develop a photovoltaic colloidal quantum dot ink that allows for lossless, single-step coating of large areas in a manufacturing-compatible process. Our materials strategy involves a solution-phase ligand exchange to transport compatible linkers that yield 1-thioglycerol-capped PbS quantum dots in dimethyl sulfoxide with a photoluminescence quantum yield of 24%. A proof-of-principle solar cell made from the ink exhibits 2.1% power conversion efficiency.

Interface recombination was studied in colloidal quantum dot photovoltaics. Optimization of the TiO2-PbS interface culminated in the introduction of a thin ZnO buffer layer deposited with atomic layer deposition. Transient photovoltage measurements indicated a nearly two-fold decrease in the recombination rate around 1 sun operating conditions. Improvement to the recombination rate led to a device architecture with superior open circuit voltage (VOC) and photocurrent extraction. Overall a 10% improvement in device efficiency was achieved with Voc enhancements up to 50 mV being realized.

We thank Angstrom Engineering and Innovative Technology for useful discussions regarding material-deposition methods and control of the glovebox environment, respectively. The authors would like to acknowledge the technical assistance and scientific guidance of E. Palmiano, R. Wolowiec, and D. Kopilovic. This publication is based, in part, on work supported by Award KUS-11-009-21, made by King Abdullah University of Science and Technology (KAUST), by the Ontario Research Fund Research Excellence Program, and by the Natural Sciences and Engineering Research Council (NSERC) of Canada. D.Z. acknowledges financial support through the NSERC CGS D Scholarship.

The best-performing colloidal-quantum-dot (CQD) photovoltaic devices suffer from charge recombination within the quasi-neutral region near the back hole-extracting junction. Graded architectures, which provide a widened depletion region at the back junction of device, could overcome this challenge. However, since today's best materials are processed using solvents that lack orthogonality, these architectures have not yet been implemented using the best-performing CQD solids. Here, a new CQD ink that is stable in nonpolar solvents is developed via a neutral donor ligand that functions as a phase-transfer catalyst. This enables the realization of an efficient graded architecture that, with an engineered band-alignment at the back junction, improves the built-in field and charge extraction. As a result, optimized IR CQD solar cells (Eg ≈ 1.3 eV) exhibiting a power conversion efficiency (PCE) of 12.3% are reported. The strategy is applied to small-bandgap (1 eV) IR CQDs to augment the performance of perovskite and crystalline silicon (cSi) 4-terminal tandem solar cells. The devices show the highest PCE addition achieved using a solution-processed active layer: a value of +5% when illuminated through a 1.58 eV bandgap perovskite front filter, providing a pathway to exceed PCEs of 23% in 4T tandem configurations with IR CQD PVs.

Photovoltaic (PV) materials such as perovskites and silicon are generally unabsorptive at wavelengths longer than 1100 nm, leaving a significant portion of the IR solar spectrum unharvested. Small-bandgap colloidal quantum dots (CQDs) are a promising platform to offer tandem complementary IR PV solutions. Today, the best performing CQD PVs use zinc oxide (ZnO) as an electron-transport layer. However, these electrodes require ultraviolet (UV)-light activation to overcome the low carrier density of ZnO, precluding the realization of CQD tandem photovoltaics. Here, a new sol-gel UV-free electrode based on Al/Cl hybrid doping of ZnO (CAZO) is developed. Al heterovalent doping provides a strong n-type character while Cl surface passivation leads to a more favorable band alignment for electron extraction. CAZO CQD IR solar cell devices exhibit, at wavelengths beyond the Si bandgap, an external quantum efficiency of 73%, leading to an additional 0.92% IR power conversion efficiency without UV activation. Conventional ZnO devices, on the other hand, add fewer than 0.01 power points at these operating conditions.

Application of pseudohalogens in colloidal quantum dot (CQD) solar-cell active layers increases the solar-cell performance by reducing the trap densities and implementing thick CQD films. Pseudohalogens are polyatomic analogs of halogens, whose chemistry allows them to substitute halogen atoms by strong chemical interactions with the CQD surfaces. The pseudohalide thiocyanate anion is used to achieve a hybrid surface passivation. A fourfold reduced trap state density than in a control is observed by using a suite of field-effect transistor studies. This translates directly into the thickest CQD active layer ever reported, enabled by enhanced transport lengths in this new class of materials, and leads to the highest external quantum efficiency, 80% at the excitonic peak, compared with previous reports of CQD solar cells.