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Electron cyclotron resonance (ECR) discharges of HBr/Ar, HBr/H 2 , or HBr/CH 4 were used for dry etching of Ga-based (GaAs, GaSb, and AlGaAs) and In-based (InP, InAs, InSb, InGaAs, and InAlAs) III-V semiconductors. The effects of variations in pressure (1-20 mTorr), gas composition, and additional RF-induced bias on the sample were examined. At least -100 V of dc bias is required to initiate etching under all conditions, with the etch rates found to be fastest with CH 4 addition, followed by H 2 and then Ar

Ar inductively coupled plasmas (ICP) are found to produce substantially less ion-induced damage to AlGaAs than electron cyclotron resonance plasmas with the same average ion energy. The dc self-bias and hence ion energy is strongly suppressed by increasing ICP source power, while ion flux increases by approximately two orders of magnitude between source powers of 0 and 1500 W. The changes in AlGaAs sheet resistance are due primarily to introduction of deep level compensating defects which reduce both carrier density and mobility.

Calculs SCF-MO ab initio (STO-3G): composition des orbitales, populations de recouvrement, distributions de charge pour les cis- et trans-difluoro-1,2- et tetrafluorooxiranne