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Highly dispersed palladium nanoparticles (Pd NPs) immobilized on heteroatom-doped hierarchical porous carbon supports (N,O-carbon) with large specific surface areas are synthesized by a wet chemical reduction method. The N,O-carbon derived from naturally abundant bamboo shoots is fabricated by a tandem hydrothermal-carbonization process without assistance of any templates, chemical activation reagents, or exogenous N or O sources in a simple and ecofriendly manner. The prepared Pd/N,O-carbon catalyst shows extremely high activity and excellent chemoselectivity for semihydrogenation of a broad range of alkynes to versatile and valuable alkenes under ambient conditions. The catalyst can be readily recovered for successive reuse with negligible loss in activity and selectivity, and is also applicable for practical gram-scale reactions.

6H-SiC single crystals have been successfully grown on (1015) plane seed by sublimation method. High density stacking faults (SFs) were observed by transmission synchrotron radiation X-ray topography. Based on the invisibility criteria of stacking faults, the displacement vectors of most SFs were determined to be the type of 1/6[1120]. Laser scanning confocal microscopy (LSCM) was used to observe the etching morphology of (0115) wafer. The etching steps of SFs were found and their density decreased from 3.6×103 cm-1 to 2.0×102 cm-1 along the projection direction. The inclination angles of the SFs etching step plane to (10-15) plane were measured by line scanning of LSCM. It was found that the inclination angles decreased from 20° to 10° along the projection direction. Different etching characteristics of SFs along radial direction of 6H-SiC (1015) wafer should be attributed to different displacement vectors and different stacking fault energies for these stacking faults. (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

The Al-polar surfaces of AlN wafers cut from physical vapor transport grown crystals were lapped and polished. Polishing procedures were developed to produce surfaces for epitaxial growth. The surface scratches and subsurface damage caused by mechanical polishing were removed by a final chemical mechanical polishing (CMP) process, which yielded a perfect surface ready for epitaxial growth. After CMP the average root mean square surface roughness on a 5 µm × 5 µm area was 0.1 nm. Characterization of the polished surfaces by electron back scatter diffraction and cathodoluminescence showed no subsurface damage. The difference of orientation dependent material removal rate during CMP went up with the increase of the misorientation from (0001) surface. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

A near stoichiometric LiNbO3 single crystal has been grown by the Czochralski method from a 58.5% Li melt hold in a large platinum crucible. High resolution X-ray rocking curves of 300 and 0006 reflections indicated that the near stoichiometric LiNbO3 crystal possesses the high structural quality. Compared with the congruent LiNbO3, the near stoichiometric LiNbO3 possesses shorter ultraviolet absorption edge, thus higher Li concentration. The OH– infrared absorption band analyses showed that the Li concentration in the near stoichiometric LiNbO3 crystal is higher than that in the congruent LiNbO3 crystal. This result is in good agreement with that of the ultraviolet absorption edge. The electro-optic (EO) coefficient γ22 of the near stoichiometric LiNbO3 crystal was measured to be 6.75 pm/V higher than that of congruent LiNbO3 crystal. It also proves the near stoichiometric LiNbO3 electro-optic Q-switched requires a low driving voltage and it is advantageous for the device performance. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)