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The development of helicenes with strong chiroptical response and controlled photophysics is highly desirable but challenging. In this work, double thia/sulfone[7]helicenes were synthesized to investigate the heteroatom effect on the photophysical and chiroptical properties of double heterohelicenes through comparison with the previously reported double oxa[7]helicene. By variation of the embedded heteroatoms from oxygen to sulfur, the absorption and emission were significantly red‐shifted, along with the improved luminescence dissymmetry factor (glum). In particular, the double sulfone[7]helicene exhibited strong red to near‐infrared (NIR) emission with glum of 1.1×10−3, suggesting its potential as a NIR circularly polarized luminescence emitter. [ABSTRACT FROM AUTHOR]

Modulation of the band gap energy and diameter of quantum dots (QDs) formed in glasses is important to achieve the optimized performance for applications as infrared light sources, lasers, saturable absorbers, etc. Absorption and photoluminescence of PbS QDs were extended into mid-infrared wavelength range in glasses containing small amount of lead but oversaturated with sulfur. Dual-band photoluminescence of PbSe QDs was prepared in oxyfluoride glass-ceramics containing BaF2 nanocrystals. By introducing SnO in the glasses, alloyed Pb1-xSnxSe QDs with smaller band gap energies were formed in glasses, and mid-infrared photoluminescence of Pb1-xSnxSe QDs at ~2570 nm in wavelength was achieved. [ABSTRACT FROM AUTHOR]

Size-dependent Stokes shift of PbS quantum dots (QDs) formed in the glasses was investigated. PbS QDs with diameters of 3.5 nm to 13.3 nm were precipitated in silicate glasses with different S/Pb ratios using the conventional thermal treatment method. Absorption and photoluminescence (PL) of PbS QDs were tuned from ~0.9 µm (1.38 eV) to ~2.3 µm (0.54 eV) by adjusting the diameters of PbS QDs from 3.5 nm to 13.3 nm. PL energies of QDs exhibited linear dependence on the absorption energies with a slope of 0.484 for PbS QDs with band gap energies larger than 0.98 eV, and the maximum Stokes shift was found to be 206.2 meV for 3.5 nm-sized PbS QDs. For large PbS QDs with band gap energies smaller than 0.98 eV, Stokes shift was found to be ~20 meV or smaller. The size-dependent Stokes shift indicated that surface defects made the main contribution and relative energy positions of these surface defects were strongly dependent on the size of PbS QDs. [ABSTRACT FROM AUTHOR]