1. AlN/GaN heterostructure TFTs with plasma enhanced atomic layer deposition of epitaxial AlN thin film.
- Author
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Liu, Cheng, Liu, Shenghou, Huang, Sen, Li, Baikui, and Chen, Kevin J.
- Subjects
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SEMICONDUCTOR research , *SOLID state electronics , *ALUMINUM nitride films , *ALUMINUM nitride , *THIN films , *ATOMIC layer deposition - Abstract
AlN/GaN heterostructures with AlN thin film growing by low-thermal-budget (300 °C) plasma-enhanced atomic layer deposition (ALD) were realized on a semi-insulating GaN-on-sapphire template. By applying in situ ALD-grown Al2O3 as the gate dielectric, thin film transistors (TFTs) have been successfully fabricated. The proposed TFTs exhibit effective gate control with a low subthreshold swing of ∼ 85 mV/dec, an ION/ IOFF ratio of 105 and good channel conductive with a low-field mobility of ∼ 27 cm2/(V·s). This mobility is one order of magnitude higher than that achieved in AlN/GaN heterostructures growing by magnetron sputtering. The enhanced device performance is attributed to a high-quality ALD-AlN/GaN interface obtained by in situ remote-plasma pre-deposition cleaning and the single crystal nature of subsequent epitaxial AlN thin film by plasma-enhanced ALD. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]
- Published
- 2014
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