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Your search keyword '"Vilcot, A."' showing total 2 results
2 results on '"Vilcot, A."'

1. METAL SEMICONDUCTOR METAL PHOTODETECTORS.

Author

Harari, J. A., Vilcot, J. P., and Decoster, D. J.

Subjects
DETECTORS, LIGHT absorption, ENERGY conversion, SEMICONDUCTORS, ELECTRIC currents, ELECTRODES
Abstract

This article discusses various issues related to the metal-semiconductor-metal (MSM) photo-detectors. The MSM photo-detector is one of the solid-state photo-detectors fabricated on semiconductor slices. The general principle of photo-detection in semiconductor material is to collect electron-bole pairs that have been generated by light absorption. This two-terminal device converts optical power into an electric current. This basic photo-detector, which is mainly based on an inter digitated electrode structure, benefits from a simple fabrication process. It can offer a large photosensitive surface area and leads to high speed performance.

Published
1999

2. III-V MONOLITHIC RESONANT PHOTORECEIVER USING LOCAL EPITAXY AND LARGE LATTICE MISMATCH MATERIAL.

Author

Aboulhouda, S., Vilcot, J. P., Razeghl, M., Decoster, D., Francois, M., Maricot, S., and Aboudou, A.

Subjects
*INTEGRATED circuits, *OPTOELECTRONIC devices, *ELECTRONIC equipment, *DETECTORS, *SEMICONDUCTORS, *METAL semiconductor field-effect transistors
Abstract

It is shown that local and large lattice mismatch epitaxies could be useful techniques for the fabrication of optoelectronic integrated circuits. As an example, we fabricated a monolithic resonant photoreceiver which associates a long-wavelength metal-semiconductor-metal photodetector, a GaAs MESFET preamplifier, and an inductor. The GaAs / GaInAs heteroepitaxy needed for the photodetector wax selectively grown using a SiO[sub2] mask and the entire circuit was fabricated on a silicon substrate. Compared to a PIN photodiode loaded with a 50-ω resistor, more than 10 dB gain was measured at 7 GHz in a microwave optical link. [ABSTRACT FROM AUTHOR]

Published
1991
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